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ThO2 is Fluorite structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Th4+ is bonded in a body-centered cubic geometry to eight equivalent O2- atoms. All Th–O bond lengths are 2.43 Å. O2- is bonded to four equivalent Th4+ atoms to form a mixture of edge and corner-sharing OTh4 tetrahedra.
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In this work, impact of low level of uranium (U) atom substitution on thermal conductivity of thorium dioxide (ThO2) is investigated. ThO2 is an electronic insulator with a wide optical band-gap and no unpaired electrons whose thermal transport is governed by phonons. U-substitution introduces unpaired f-electrons resulting in paramagnetic behavior of U-ThO2 at room temperature, which significantly suppresses its thermal conductivity. A single crystal of U-ThO2 with graded composition of U is grown using a hydrothermal synthesis method, and thermal conductivity measurements are performed in regions with uniform composition of U at levels of 0%, 6%, 9% and 16%. Measured thermal conductivity profiles over 77–300 K temperature range are analyzed using an analytical expression for phonon-mediated thermal transport based on Klemens-Callaway model. Temperature dependent thermal conductivity is found to deviate significantly from the Rayleigh scattering trend expected for a simple substitutional point defect with a small perturbation to mass and interatomic forces. With the resonant scattering term, observed large suppression of thermal conductivity at low temperatures can be closely reproduced. Additionally, the extracted phonon-spin coupling constants imply a nonlinear relation of phonon-spin interaction intensity with respect to U doping percentage. Our study reveals how phonon-spin scattering contributed by unpaired f-electrons in U atoms influences thermal transport in the U-ThO2 system.
In-situ transmission electron microscopy (TEM) with simulated extreme environments is an effective tool for understanding and tracking microstructural changes down to the atomic scale. The objective of this research is to study the effect of temperature on the evolution of extended defects in ThO2 and UO2. Here, we present in-situ TEM isochronal thermal annealing experiments using a micro-electro-mechanical-system (MEMS)-based heating holder. ThO2 and UO2 single crystal specimens were grown inside an inert silver ampoule using hydrothermal synthesis. Both samples were irradiated using 2 MeV protons at 600oC up to 0.1 dpa at Texas A&M University’s Accelerator Laboratory. Fig. 1a shows a weak-beam dark field TEM image of ThO2 after irradiation, indicating the presence of faulted 1/3 <111> type dislocation loops. This presentation will discuss the effect of annealing temperature (600oC, 800oC, 1000oC, 1100oC, etc.) on dislocation loop density, size and distribution, loop nature (interstitial/vacancies) and Burgers vector, as well as the formation of voids in both ThO2 and UO2. This work will also discuss the interaction between defects during annealing. The in-situ TEM annealing cycle is shown in Fig 1b. This research significantly improves the understanding of defect behavior in oxide nuclear fuels with temperature and will aid computational modeling efforts. This work was supported as part of the Center for Thermal Energy Transport under Irradiation (TETI) Energy Frontier Research Center, funded by the U.S. Department of Energy Office of Science.
During reactor operation, nuclear fuels are subject to extreme temperature and irradiation conditions which can significantly degrade the fuel's thermal transport properties. The reduction in thermal conductivity of the fuel as a result of irradiation-induced lattice defects is arguably the most important fuel performance metric in regard to reactor efficiency and safety. Because thorium dioxide (ThO2) is suitable as a model system for more complex materials such as UO2 and its mixed oxides, we present a theoretical investigation of thermal conductivity reduction seen in defect-bearing thorium dioxide and compare directly to experimental measurements. Phonon-mediated thermal transport of the fuel is modeled by a solution to the Boltzmann transport equation (BTE) for phonons. A cluster dynamics (CD) model for lattice defect evolution during irradiation predicts defect densities which are used as input to the BTE for modeling phonon-defect scatterings. Phonon scatterings by lattice defects include those from point defects and vacancy clusters and interstitial clusters of various sizes. The CD model is benchmarked against structural defect characterization of irradiated thorium dioxide using electron microscopy. Thermal conductivity predicted by the BTE model is compared to measured values for irradiated thorium dioxide specimens below room temperature to isolate effects of phonon-defect scattering from intrinsic 3-phonon processes, which dominate at higher temperatures. The computed conductivity values are in partial agreement at temperatures close to room temperature while slight deviations are observed at the lowest measured temperatures, suggesting that implemented phonon-defect scattering cross-section expressions may not be adequate for low temperatures. The presented work provides a necessary investigation of the influence of irradiation induced defects on fuel performance and represents a first step toward a full characterization of phonon mediated thermal transport in irradiated materials with complex defect microstructure.
Crystallite orientation identification is invaluable, but is often limited to small area identification or requires a large area sample. Nondestructive optical methods such as polarized Raman spectroscopy, in contrast, can be used to completely map a variety of sample sizes, but their potential is not yet fully realized. Here, we report a systematic study of polarized Raman scattering of high-quality, hydrothermally grown, single crystals of urania and thoria. The peak intensity variations for as-grown major crystal planes, post-growth polished crystal planes, and a post-growth polished non-crystallographic plane are directly linked to crystallographic orientation and crystal rotation, and agree with computed models. In particular, the parallel polarized peak intensity results are directly correlated with metal–oxygen–metal chains in the fluorite structure and can be used to determine both orientation and rotational alignment of a given crystal face if sufficiently small rotational steps are applied. These results are structure based, being applicable to the larger fluorite phase space, which is useful for optical, semiconductor, nuclear, and solid oxide fuel cell industries. Further, these results suggest that Raman spectroscopy can identify non-crystallographic orientations that are not discernable by traditional means.
In this work, impact of low level of uranium (U) atom substitution on thermal conductivity of thorium dioxide (ThO 2 ) is investigated. ThO 2 is an electronic insulator with a wide optical band-gap and no unpaired electrons whose thermal transport is governed by phonons. U-substitution introduces unpaired f-electrons resulting in paramagnetic behavior of U-ThO 2 at room temperature, which significantly suppresses its thermal conductivity. A single crystal of U-ThO 2 with graded composition of U is grown using a hydrothermal synthesis method, and thermal conductivity measurements are performed in regions with uniform composition of U at levels of 0%, 6%, 9% and 16%. Measured thermal conductivity profiles over 77–300 K temperature range are analyzed using an analytical expression for phonon-mediated thermal transport based on Klemens-Callaway model. Temperature dependent thermal conductivity is found to deviate significantly from the Rayleigh scattering trend expected for a simple substitutional point defect with a small perturbation to mass and interatomic forces. With the resonant scattering term, observed large suppression of thermal conductivity at low temperatures can be closely reproduced. Additionally, the extracted phonon-spin coupling constants imply a nonlinear relation of phonon-spin interaction intensity with respect to U doping percentage. Our study reveals how phonon-spin scattering contributed by unpaired f-electrons in U atoms influences thermal transport in the U-ThO 2 system.
Advances in target fabrication are critical to high-precision measurements in nuclear physics. This work details the preparation of patterned CeO 2 and ThO 2 architectures and thin-film targets via ink-jet deposition of combustible solutions. The produced targets were characterized by scanning electron microscopy (SEM), and by alpha-particle spectroscopy for radioactive targets to determine densities. Ink jet printing of the targets, used both ethanol and 2-methoxyethanol as solvents, with cerium or thorium nitrate as the oxidizer and acetylacetone as the fuel. Additionally, we found that the distance between each droplet dispersion (step size) played the most significant role in determining the final pattern uniformity and thickness. A 50 μm step size leads to relatively thick targets with a density of 350 μg/cm 2 . Significant overlap in droplet sizes leads to a heterogeneous target with an undesirable cracked surface structure. In contrast, 150 μm spacing yields thinner (20 μg/cm 2 ) patterned structures with excellent surface coverage. This method of Ink-jet printing provides a straightforward, scalable, and high-efficiency pathway to prepare custom made, high-quality targets for nuclear physics experiments.
Irradiation induced structural changes of actinide oxide materials is a key consideration in their development and use as nuclear fuels. This study reported on the synthesis of ThO 2 and Th 1–x U x O 2 (x = 0.15, 0.50) thin films, fabricated using electrospray-assisted solution combustion synthesis, and their responses to ion irradiation. Krypton ion irradiations, up to a fluence of 1 × 10 16 ions/cm 2 , were carried out to simulate radiation damage induced by fission products in a reactor environment. Structural and chemical changes induced by irradiation were analyzed using high-resolution scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDS), and electron energy-loss spectroscopy (EELS). It was determined that the extent and nature of irradiation-induced damage are strongly correlated with the uranium content. ThO 2 films were most susceptible to radiation-induced damage, with significant cavity formation and delamination from the substrate at high fluence. Of the compositions studied, Th 0.85 U 0.15 O 2 films showed the highest stability, characterized by moderate grain growth and the absence of voids or severe defect structures. In contrast, Th 0.5 U 0.5 O 2 films accumulated extensive damage, including the formation of a nanocrystalline central region. EELS analysis indicated that oxygen displacement is the primary driver of structural degradation in Th 0.5 U 0.5 O 2 films. α-particle spectroscopy confirmed minimal actinide loss across all compositions, underscoring the mechanical robustness of the films. These findings provide insight into the irradiation-induced damage mechanisms in Th O2 and Th 1–x U x O 2 systems, supporting their development as potential materials for nuclear fuels and irradiation-tolerant thin film targets in nuclear physics measurements.