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At least 19 records

Phase diagrams and microscopic structures of (Hg,Cd)Te, (Hg,Zn)Te, and (Cd,Zn)Te alloys

A cluster theory based on the quasi-chemical approximation has been applied to study the local correlation bond-length distribution, and phase diagrams of the II-VI pseudobinary alloys Hg(1 - x)Cd(x)Te, Hg(1 - x)Zn(x)Te, and Cd(1 - x)Zn(x)Te. The cluster energy is calculated by letting it relax in some effective alloy medium and then considering the contributions from the strain and chemical energies. Two different models are presented to simulate the alloy medium. While both models show that all three alloys have nearly random distributions, the signs of the local correlation prove to be sensitive to the alloy medium chosen for the energy calculation. Good agreement is found between experiment and the bond lengths and phase diagrams in both models.

Patrick, R. S.↗

Application of the regular associated solution model to the Cd-Te and Hg-Te binary systems

The regular associated solution model is used to treat the phase diagrams of the binary II-VI semiconductor alloy systems Hg-Te and Cd-Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four-adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an indpendent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg-Te and Cd-Te systems. The relationship of this work to previous investigations is discussed.

Kelley, J. D.↗

An experimental TE sub 12 - TE sub 11 circular waveguide mode converter

Theoretical and experimental results for a prototype TE sub 12 to TE sub 11 circular waveguide mode converter are discussed. The system which requires such device, the high power Ka-Band transmitter is described briefly. A short review of coupled mode theory is given, and the theoretical performance of the final converter design is given. Experimental results for the fabricated converter are presented and compared with theory. A method of identifying the various circular waveguide modes in a multimode device is described. Given the close agreement between the theoretical predictions and experimental results, the computer code may be used with confidence in the design of future multimode tapers and mode converters.

Hoppe, D.↗

Directional couplers for detecting the TE sub 11 and TE sub 12 circular waveguide modes

The theoretical and experimental results for a pair of mode-selective directional couplers designed to detect the TE sub 11 and TE sub 12 modes in a multimode circular wavelength are described. A brief description of the design of the couplers is presented, followed by a comparison of their measured and calculated parameters. The couplers were used to measure the characteristics of a circular waveguide mode converter. The results of these measurements are described.

Hoppe, D.↗

A thermodynamic model of the Hg(0.8)Cd(0.2)Te-iodine transport system. I - Te-saturated source material. II - Source material composition within the homogeneity range

A thermochemical analysis of the Hg(0.8)Cd(0.2)Te-iodine vapor transport system is presented, and theoretical calculations of diffusion-controlled mass transport rates are made. The predicted mass fluxes are compared with experimental data obtained from transport experiments under vertical, stabilizing conditions reported earlier and with results of additional transport experiments conducted during the present study. Experimental mass transport rate studies of the transport system for fixed amount of excess Hg as a function of transport agent pressure are presented. The mass fluxes are determined for the vertical, stabilizing orientation of the density gradient relative to the gravitational vector. In order to compare experimental mass transport rates with computed values, the thermochemical analysis is extended to take the formation of Hg vacancies in the above compound into account along with their effect on the partial pressure of the system.

Chandra, D.↗

Electron mobility in n-type Hg(1-x)Cd(x)Te and Hg(1-x)Zn(x)Te alloys

Calculations of electron mobility in n-type mercury cadmium telluride (MCT), a candidate material for IR detectors, and n-type mercury zinc telluride (MZT) are compared. It is found that electron mobilities in MCT and MZT are nearly the same for equivalent energy gaps. The results are also found to compare will with experimental data. Directions of future research are briefly discussed.

Patterson, J. D.↗

Composition-Temperature-Partial Pressures Data for Cd(sub 0.8)Zn(sub 0.2)Te by Optical Absorption Measurements

Known weights of Cd, Zn and Te were reacted in silica optical cells of known volume and the partial pressure of Te2 and Zn between 485 and 1160 C were determined by measuring the optical density of the vapor in the ultra-violet to visible range. The composition of the condensed phase or phases was calculated from the original weights and the amount of material in the vapor phase. The corresponding composition - temperature - partial pressures, x(sub Te)-T-P(sub Te2), data, including five Te-rich solidus points, were established. The solubility range for the Te-rich Cd(sub 0.8)Zn(sub 0.2)Te(s) is similar to that of CdTe(s) with x(sub Te) = 0.50005 at 809 C and an estimated maximum solubility of x(sub Te) = 0.50012 at about 1000 C. The partial pressure of Cd and Te(sub 2) measured over the Cd(sub 0.8)Zn(sub 0.2)Te melt at 1140 C were about 1.55 and 0.02 atm, respectively, and the corresponding P(Sub Zn) was estimated to be 0.05 atm. It was recommended that a Cd reservoir maintaining at 800 to 820 C should be used during directional solidification of Cd(sub o.8)Zn(sub 0.2)Te to prevent the preferential loss of Cd to the vapor phase.

Su, Ching-Hua↗

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Su, Ching-Hua↗

Physics and Chemistry of Te and HgTe-based Ternary Melts

Historically, the theoretical treatment of the liquid phases has always been more difficult and complicated than that for solid and gas phases. A liquid has no lattice structure as crystalline solids and the atoms/molecules in the liquid can migrate through it relatively rapidly. On the other hand, it is also interacting with many other atoms/molecules so that the simplifications of the kinetic theory of gases cannot be employed. For more complicated liquids, such as the liquids of high ionicity and those containing hydrogen bonds and electric dipoles, the understanding is far from complete. At the same time, accurate information on the physics and chemistry of semiconductor melts is needed for the quantitative descriptions of the process of crystal growth from melt. The pre-crystallization phenomena in the liquid phase are critical because the properties of the grown crystals depend on the state and structure of the melt as well as the thermal history of the melt during solidification process. However, the data on the liquid phase, such as thermophysical properties of semiconductor melts are scarce, especially for the HgTe-based II-VI ternary compound semiconductors because of their high vapor pressure and extreme toxicity. Analysis of the thermophysical properties of the melt can provide information about structural transitions of the melt during the solidification process. From a broader point of view, the structure of liquids is much more complicated than the crystalline solids, especially the relaxation behavior through different thermal histories. The theory of hetero-phase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics, field theory, physics of nuclear-matter, cosmology, biology and even sociology. This book summarizes the physics and chemistry from the experimental measurements and theoretical analyses of phase diagram, thermodynamic properties, density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary and ternary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the analyses of these results. The main objectives of this study are: (1) to provide the phase diagrams and thermodynamic properties of Hg-Cd-Te and Hg-Zn-Te systems through quantitatively fitting the experimental data by assuming an associated solution model for the liquid phase, (2) to experimentally measure the thermophysical properties of the Hg-Cd-Te and Hg-Zn-Te melts, including density, viscosity, electrical conductivity and thermal conductivity as functions of temperature and composition and (3) to enhance the fundamental knowledge of hetero-phase fluctuations and relaxation phenomena in the melts and extend our understanding of the solidification process in order to interpret the experimental results of crystal growth so as to improve the melt growth processes of the compound semiconductor. The physics and chemistry of Te and HgTe-based ternary melts were explored through the studies of the structural transformation during melting, the supercooling during solidification, the relaxation phenomena after rapid cooling of the melts and the metal-semiconductor transition in the melts through the analyses of electrical conductivity and Lorenz number. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the analysis of the homogenization process in the melt will also be presented.

Thermophysical properties↗

Differential Thermal Analysis of Hg(1-x)Mn(x)Te Alloys in the X=0 to 0.3 Range

Understanding the experimental conditions necessary for the development of radial and axial compositional homogeneity in directionally solidified Hg(0.89)Mn(0.11)Te(MMT) crystals has been difficult due to the lack of segregation coefficient data on the Hg(1-x)Mn(x)Te alloy system in the X = 0 to 0.3 composition range. Determining segregation coefficient data from the available Hg(1-x)Mn(x)Te alloy phase equilibria data is not practical due to discrepancies in the shape of the reported solidus and liquidus curves in the X = 0 to 0.3 range. To resolve these discrepancies and to obtain segregation coefficient data which can be used to understand homogeneity in directionally solidified MMT crystals, the solidus and liquidus temperatures of seven Hg(1-x)Mn(x)Te alloys in the X = 0 to 0.3 range were determined using differential thermal analysis (DTA). The Hg(1-x)Mn(x)Te phase diagram constructed for the X = 0 to 0.3 range of this alloy system from the DTA measurements clarifies the shape of the solidus and liquidus curves in this range. The segregation coefficient for the Hg(1-x)Mn(x)Te system was found to vary from 5 to 4.4 as the solidus composition increased from 0-30 atomic percent MnTe. This information will be useful in the analysis of axial and radial homogeneity of directionally solidified MMT crystals.

Price, M. W.↗

Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

Li, C.↗

Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

Vydyanath, H. R.↗

Characterization of precipitates in CdTe and Cd(1-x)Zn(x)Te grown by vertical Bridgman-Stockbarger technique

Different polishing solutions were tested for exposing precipitates in CdTe and Cd(0.96)Zn(0.04) single crystals grown by vertical Bridgman-Stockbarger technique. A solution of 5-7% Br2 in methanol and E-solution were both effective. High resolution scanning electron microscopy with energy dispersive spectroscopy (SEM/EDS) was employed to characterize those exposed precipitates. Most of the polyhedral-shaped Te precipitates with a size range from 3 to 20 microns had voids inside. Partially dissolved Te precipitates were observed in CdTe samples that had been annealed in Cd vapor at 700 C for 10 min. Isolated areas mis-oriented from the matrix were observed in CdTe and Cd(0.96)Zn(0.04)Te that had been annealed in Cd vapor at 700 C for 20 and 50 h, respectively. Te precipitate images were recorded with EDS. By SEM/EDS, Cd-rich precipitates were observed in some Cd-annealed CdTe. C and Na impurities were detected in some Te precipitates.

Shen, J.↗

Origin of the Bandgap Bowing in ZNSe(1-x)Te(x) Alloys

Photomodulated reflection and optical absorption spectroscopies were used to measure the composition and hydrostatic pressure dependencies of interband optical transitions in ZnSe(1-x)Te(x) alloys. On the Te-rich side, the bandgap reduction and the reduction in the pressure dependence of the bandgap are well explained by the band anticrossing interaction between the ZnTe conduction band states and the Se localized state located at 2.85 eV above the valence band top of ZnTe. On the Se-rich side, an interaction between the degenerate Gamma valence bands of ZnSe and the localized Te state located at 0.1 eV above the valence band top of ZnSe is proposed to generate the bandgap reduction and the rapid increase of the spin-orbit splitting with increasing Te concentration. A linear interpolation between these two models accounts for the composition and pressure dependencies of the bandgap in the entire composition range.

Walukiewicz, W.↗

Comparison of Te and Ti from Ogo 6 and from various incoherent scatter radars.

Langmuir probe and retarding potential analyzer (RPA) data on the electron and ion temperatures Te and Ti obtained from Ogo 6 are compared with Te and Ti values obtained from the incoherent scatter network. The satellite to radar temperature ratio TeS/TeR is 1.15 on the average for these comparisons. This discrepancy is larger than the uncertainties usually placed on the probe and radar Te values. The ion temperature ratio TiS/TiR approximately 1.0, independent of the particular radar examined. This comparison serves as an intercalibration of the incoherent scatter network.

Mcclure, J. P.↗

Development of a (Hg, Cd)Te photodiode detector, Phase 2

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Source record↗

Compositional redistribution during casting of Hg sub 0.8 Cd sub 0.2 Te alloys

A series of Hg(0.8)Cd(0.2)Te ingots was cast both vertically and horizontally under well-defined thermal conditions by using a two-zone furnace with isothermal heat-pipe liners. The main objective of the experiments was to establish correlations between casting parameters and compositional redistribution and to develop ground-based data for a proposed flight experiment of casting of Hg(1-x)Cd(x)Te alloys under reduced gravity conditions. The compositional variations along the axial and radial directions were determined by precision density measurements, infrared transmission spectra, and X-ray energy dispersion spectrometry. Comparison between the experimental results and a numerical simulation of the solidification process of Hg(0.8)Cd(0.2)Te is described.

Su, Ching-Hua↗