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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗
NASA NTRS1990

Power and stability limitations of resonant tunneling diodes

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

Kidner, C.↗
NASA NTRS1990

Millimeter-wave detection using resonant tunnelling diodes

A lattice-matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter-wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and frequency. A tangential signal sensitivity of -37 dBm (1 MHz amplifier bandwidth) with a corresponding video resistance of 350 ohms at 40 GHz has been measured. These results appear to be the first millimeter-wave tangential signal sensitivity and video resistance results for a resonant tunnelling diode.

Mehdi, I.↗
NASA NTRS2006

Multiplexing Transducers Based on Tunnel-Diode Oscillators

Multiplexing and differential transducers based on tunnel-diode oscillators (TDOs) would be developed, according to a proposal, for operation at very low and/or widely varying temperatures in applications that involve requirements to minimize the power and mass of transducer electronic circuitry. It has been known since 1975 that TDOs are useful for making high-resolution (of the order of 10(exp -9)) measurements at low temperatures. Since that time, TDO transducers have been found to offer the following additional advantages, which the present proposal is intended to exploit: TDO transducers can operate at temperatures ranging from 1 K to about 400 K. Most electronic components other than tunnel diodes do not operate over such a wide temperature range. TDO transducers can be made to operate at very low power - typically, <1 mW. Inasmuch as the response of a TDO transducer is a small change in an arbitrarily set oscillation frequency, the outputs of many TDOs operating at sufficiently different set frequencies can be multiplexed through a single wire. Inasmuch as frequencies can be easily subtracted by means of mixing circuitry, one can easily use two TDOs to make differential measurements. Differential measurements are generally more precise and less susceptible to environmental variations than are absolute measurements. TDO transducers are tolerant to ionizing radiation. Ultimately, the response of a TDO transducer is measured by use of a frequency counter. Because frequency counting can be easily implemented by use of clock signals available from most microprocessors, it is not necessary to incorporate additional readout circuitry that would, if included, add to the mass and power consumption of the transducer circuitry. In one example of many potential variations on the basic theme of the proposal, the figure schematically depicts a conceptual differential-pressure transducer containing a symmetrical pair of TDOs. The differential pressure would be exerted on an electrically conductive and grounded diaphragm, which, at zero differential pressure, would nominally be sprung to a middle position between two capacitor plates that would be parts of the two TDOs. The frequencies of the two TDOs would vary in opposite directions as variations in differential pressure bent the diaphragm away from one capacitor plate and toward the other. The outputs of the TDOs would be mixed and lowpass filtered to obtain a signal at the difference between the frequencies of the two TDOs. The difference frequency would be measured by a frequency counter and converted to differential pressure by a computer.

Chui, Talso↗
NASA NTRS1991

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

Soderstrom, J. R.↗