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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Enhanced power density in zero-vacuum-gap thermophotovoltaic devices

Thermophotovoltaic (TPV) devices, which convert infrared thermal radiation from a hot emitter into electricity, hold great promise for applications in energy storage and waste heat recovery. While recent advancements have developed TPV devices with high efficiency, much less attention has been focused on improving the power density. Current TPV methods face challenges in significantly boosting the power density using emitters at very high temperatures (>2000 °C) or using complex, costly architectures such as near-field TPV. Here, we present the first experimental demonstration of a novel far-field TPV concept called “zero-vacuum-gap TPV” that eliminates the vacuum or gas-filled gap in conventional designs. By incorporating a high-index, infrared-transparent, and thermally insulating fused quartz spacer, we achieved a two-fold increase in power density compared to the far-field counterpart under identical conditions. Notably, in our experiment, the zero-vacuum-gap far-field design transforms a less-optimized, low-power-density far-field device into one with one of the highest power densities reported at moderate temperatures (700–1100 °C). Moreover, our measurements using a graphite emitter surpass the blackbody limit for gap-integrated far-field devices and match the performance of near-field TPV devices with an ultrathin 200-nm gap. Our findings suggest that zero-vacuum-gap TPV offers potential for cost-effective, scalable manufacturing using current technologies. Additionally, our modelling predicts that further power enhancements over one order of magnitude are possible with other spacer materials.

14 SOLAR ENERGY↗
DOE OSTI2021

World Record Demonstration of > 30% Thermophotovoltaic Conversion Efficiency

Thermophotovoltaic (TPV) devices are solid-state heat engines that convert thermal radiation into electricity using semiconductor diodes, and have applications in energy storage, primary power conversion, and waste heat recovery. Higher temperature emitters and wider band gap photovoltaics (PVs) generally afford higher TPV efficiencies. High temperature emitters are accessible in thermal energy storage applications. We have demonstrated a world record 31% +/- 2% TPV conversion efficiency with a 0.9 cm2 GaAs-based PV device under a 2430 °C thermal emitter, producing an electrical output power of 2.23 W. Critical to the result was the cell’s high reflectance of photon energies below the device band gap. Unlike solar PV, for which sub-band gap (SBG) light is lost, a TPV cell can reflect and recycle SBG light to the thermal emitter. The demonstration was made on a custom-built measurement platform in which a ~100 cm2 graphite thermal emitter was heated under vacuum up to 2430 °C. The TPV efficiency was evaluated by comparing the measured electrical output power of the TPV with the calorimetrically measured total net power incident on the cell. The measured TPV efficiency as a function of thermal emitter temperature was corroborated by our full system modeling predictions. As far as the authors are aware, this is the highest TPV conversion efficiency ever measured, and device improvements should yield > 40% efficiency in the near future.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2022

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗
DOE OSTI2021

Improved performance of a near-field thermophotovoltaic device by a back gapped reflector

Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.

external luminescence↗
DOE OSTI2022

Thermophotovoltaic efficiency of 40%

Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage and conversion that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000°C (ref. 10), TPV fabrication and performance have improved. However, despite predictions that TPV efficiencies can exceed 50%, the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 C (refs. 13,14,15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III–V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900–2,400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm –2 and an emitter temperature of 2,400°C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm–2 and an emitter temperature of 2,127°C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.

14 SOLAR ENERGY↗
DOE OSTI2021

Thermodynamics of Light Management in Near-Field Thermophotovoltaics

We evaluate near-field thermophotovoltaic (TPV) energy-conversion systems focusing in particular on their open-circuit voltage (V OC ). Unlike previous analyses based largely on numerical simulations with fluctuational electrodynamics, here, we develop an analytic model that captures the physics of near-field TPV systems and can predict their performance metrics. Using our model, we identify two opportunities of TPV systems operating in the near field. First, we show analytically that enhancement of radiative recombination is a natural consequence of operating in the near field. Second, we note that, owing to photon recycling and minimal radiation leakage in near-field operation, the PV cell used in near-field TPV systems can be much thinner compared to those used in solar PV systems. Since nonradiative recombination is a volumetric effect, use of a thinner cell reduces nonradiative losses per unit area. The combination of these two opportunities leads to increasingly large values of V OC as the TPV vacuum gap decreases. Hence, although operation in the near-field was previously perceived to be beneficial for electrical power-density enhancement, here, we emphasize that thin-film near-field TPVs are also significantly advantageous in terms of V OC and consequently conversion efficiency as well as power density. We provide numerical results for an InAs-based thin-film TPV that exhibits efficiency >50% at an emitter temperature as low as 1100 K.

42 ENGINEERING↗
DOE OSTI2020

Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems

Spectral emissivity control is paramount for designing a high-efficiency selective emitter surface required for thermophotovoltaic (TPV) applications. Owing to the temperature dependency of materials optical constants, the spectral properties of a selective emitter surface changes with the emitter temperature. This paper presents the fabrication of a multilayer metal-dielectric ( ${\rm Si}_{3}{\rm N}_{4}/\rm W/Si_{3}{\rm N_{4}}$ ) coated tungsten selective emitter aimed for GaSb-based TPV systems and studies the dependence of its surface spectral emissivity, $\varepsilon (\lambda)$ , upon a temperature ranging from 300 K to 1500 K. Both the simulation and experimental methods were used to characterize $\varepsilon (\lambda)$ as a function of temperature. For wavelengths less than 1.4 µm, $\varepsilon (\lambda)$ was found to have a minimal dependence on temperature. Beyond 1.4 µm, $\varepsilon (\lambda)$ increases with the temperature. At 1.55 µm, the simulation and experimental data estimated a ${\sim}{{4}}\%$ greater emissivity at 1500 K than at room temperature. At 1500 K, the increased $\varepsilon (\lambda)$ at longer wavelengths lowered the spectral conversion efficiency of the selective emitter from 58% to 47%. The output power density, sub-bandgap loss, and TPV conversion efficiency ( ${\eta _{\rm TPV}}$ ) for a GaSb cell illuminated by the selective thermal emitter at 1500 K were estimated. ${\eta _{\rm TPV}}$ drops from 13.7% to 11% due to the increased sub-bandgap emission at 1500 K. Essential approaches for mitigating the sub-bandgap losses to further improve ${\eta _{\rm TPV}}$ are also discussed.

42 ENGINEERING↗
DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗
DOE OSTI2022

Thermal Energy Grid Storage (TEGS) Using Multi-Junction Photovoltaics (MPV) (Final Technical Report)

The project aimed to develop a thermal energy storage battery that converts electricity to heat and stores heat at ultra-high temperatures (>2000°C) in graphite blocks. The thermal battery discharge uses TPV cells that directly convert thermal energy to electrical energy without any moving parts. All components of this technology were successfully demonstrated at the laboratory scale in this project. Development of extremely low cost (< $20/kWh) grid level energy storage is a crucial necessity to reach high penetrations of renewables. The thermal battery technology developed in this project is expected to meet the cost targets that would enable full renewable penetration. The project focused on four key aspects of this technology: Converting electricity to ultra-high temperature heat: This was done through development of graphite Joule heaters. Major issues related to arcing, heater evaporation and deterioration due to long term oxidation were addressed to ensure lifetime exceeding the service lifetime of the battery. Converting ultra-high temperature heat back to electricity: This was done through development of beyond state-of-the-art TPV cells. We demonstrated energy conversion efficiency of >40% that is a world record and exceeds the average energy conversion efficiency of turbines in the USA. The findings are peer-reviewed and published in Nature, and received a wide media attention globally. Protecting the TPV cells to ensure lifetime: Deposition of volatilized material, such as sublimated material or particles, on the TPV cell could greatly reduce the efficiency and lifetime of the TPV cells by blocking their view to the heat source and causing cell overheating. In this project we developed and demonstrated an approach that reduces the deposition rate, ensuring long > 30 year life. Technoeconomic feasibility and commercialization: In collaboration with the project’s technical advisory board, we developed a technoeconomic model. The model shows that, at large scales (> 1GWh) the thermal battery technology is projected to reach a cost of energy stored below $10/kWh-e, with a cost per unit power < $0.5/W-e and a roundtrip efficiency of 50%. These results, along with the technical achievements in the project led to the creation of a startup company (i.e., Fourth Power) that is pursuing commercialization of the technology.

25 ENERGY STORAGE↗
DOE OSTI2024

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗
DOE OSTI2021

Platform for Accurate Efficiency Quantification of > 35% Efficient Thermophotovoltaic Cells

Thermophotovoltaic (TPV) devices convert thermal radiation directly into electricity using semiconductor diodes and have a variety of uses from waste heat recovery to energy storage to primary power conversion. Recent results have demonstrated promising cells nearing and surpassing 30% conversion efficiency. As TPV cells continue to increase in efficiency, they become attractive for a wider range of applications. Their efficiencies must be quantified in a standardized fashion to compare results accurately across research groups. Here, we outline and quantify the most important characteristics of an accurate and precise TPV efficiency measurement. Using a custom-built measurement apparatus that takes these characteristics into account, we report 19 cells with greater than 30% conversion efficiency and 2 cells with greater than 35% conversion efficiency. This confirms that our reported cell efficiencies are not simply those of hero cells but rather of a distribution of cells that can be produced in a consistent, high-quality process.

III-V↗
DOE OSTI2022

Record Efficiency InGaAs Thermophotovoltaic Cells For Energy Storage Applications

Utility-scale energy storage is a significant technical challenge and a key barrier to widespread adoption of renewable energy. An efficient, modular, and scalable solution can be achieved by storing energy in the form of high-temperature heat and then extracting energy, on demand, using thermophotovoltaic (TPV) cells to convert the heat back to electricity. The ideal thermal emitter temperature is determined by balancing the desire for higher power densities, high-temperature compliant materials, and efficient, cost-effective thermophotovoltaic cells, among other considerations. 0.74-eV InGaAs lattice-matched to InP is a good choice for a cell absorber, and here we describe our development of InGaAs TPV cells with efficiencies of 38.8% from an ~1850 degrees celsius source temperature. This is the highest efficiency yet measured and reported for a single-junction TPV device. This efficiency was achieved by carefully quantifying and then reducing the parasitic absorption in the semiconductor layers, and by significantly reducing the series resistance to minimize the power loss.

ENERGY STORAGE,ENGINEERING,SOLAR ENERGY↗
DOE OSTI2020

Thermophotovoltaic Heat Engine

This project was aimed at developing a thermophotovoltaic device that efficiently converts thermal radiation to electrical power. Historically, TPV devices have been plagued by poor robustness; this project sought to overcome this by merging innovations in nanophotonics, photovoltaics, and robust thermal engineering. Efforts were focused on developing high efficiency TPV devices which may drastically alter the electricity sector by enabling efficient (> 20%), fuel-flexible (any combustion fuel), distributed (< 10 kW) power generation. The project research identified the technical performance limits, technology differentiator, and customer value proposition for TPV devices and established technical performance requirements for a minimum viable product.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Abstract Inverted metamorphic Ga 0.3 In 0.7 As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 10 6 and 8.9 ± 1.7 × 10 6 cm −2 on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm −2 , yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm −2 at 1100 °C versus 0.92 W cm −2 for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm −2 , respectively.

14 SOLAR ENERGY↗
DOE OSTI2020

High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.

14 SOLAR ENERGY↗
DOE OSTI2022

MgZnO High‐Voltage Transparent Thin‐Film Transistors Built on Glass

Recently, there has been increasing interest in building‐integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large‐area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high‐voltage transparent thin‐film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide‐bandgap oxide‐based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO‐based materials with different functions for two roles: a semiconductor Mg 0.01 Zn 0.99 O (MZO) as TFT channel and Al‐doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high‐k‐stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 10 6 . The device exhibits an average optical transmittance of 81% over the visible spectrum.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

High-emissivity, thermally robust emitters for high power density thermophotovoltaics

Thermal radiative energy transport is essential for high-temperature energy harvesting technologies, including thermophotovoltaics (TPVs) and grid-scale thermal energy storage. However, the inherently low emissivity of conventional high-temperature materials constrains radiative energy transfer, thereby limiting system performance and technoeconomic viability. Here, in this study, we demonstrate ultrafast femtosecond laser-material interactions to transform diverse materials into near-blackbody surfaces with broadband spectral emissivity above 0.96. This enhancement arises from hierarchically engineered light-trapping microstructures enriched with nanoscale features, effectively decoupling surface optical properties from bulk thermomechanical properties. These laser-blackened surfaces (LaBS) exhibit exceptional thermal stability, retaining high emissivity for over 100 h at temperatures exceeding 1,000°C, even in oxidizing environments. When applied as TPV thermal emitters, Ta LaBS double electrical power output from 2.19 to 4.10 W cm −2 at 2,200°C while sustaining TPV conversion efficiencies above 30%. This versatile, largely material-independent technique offers a scalable and economically viable pathway to enhance emissivity for advanced thermal energy applications.

laser-blackened surfaces↗