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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae=Ca,Sr,Ba, as thermoelectric materials

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2 Sn, Sr2 Sn and Ba2 Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli - roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.

thermoelectric↗
DOE OSTI2012

Energy efficient synthesis of boranes

The reaction of halo-boron compounds (B--X compounds, compounds having one or more boron-halogen bonds) with silanes provides boranes (B--H compounds, compounds having one or more B--H bonds) and halosilanes. Inorganic hydrides, such as surface-bound silane hydrides (Si--H) react with B--X compounds to form B--H compounds and surface-bound halosilanes. The surface bound halosilanes are converted back to surface-bound silanes electrochemically. Halo-boron compounds react with stannanes (tin compounds having a Sn--H bond) to form boranes and halostannanes (tin compounds having a Sn--X bond). The halostannanes are converted back to stannanes electrochemically or by the thermolysis of Sn-formate compounds. When the halo-boron compound is BCl.sub.3, the B--H compound is B.sub.2H.sub.6, and where the reducing potential is provided electrochemically or by the thermolysis of formate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

An alkaline tin(II) halide compound Na{sub 3}Sn{sub 2}F{sub 6}Cl: Synthesis, structure, and characterization

A new alkali tin(II) halide compound, Na{sub 3}Sn{sub 2}F{sub 6}Cl, is synthesized by hydrothermal method. This compound crystallizes trigonally in space group of R-3c (167), and processes a zero-dimensional (0D) structure consisted of Na{sup +} cations, Cl{sup −} anions and the isolated [SnF{sub 3}]{sup -} trigonal pyramids in which the stereochemically active 5s{sup 2} lone pair electrons are attached to the Sn{sup 2+} cations. Interestingly, the [SnF{sub 3}]{sup −} trigonal pyramids are parallel arranged in the a-b plane, while oppositely arranged in line with rotation along the c- axis. Moreover, the energy bandgap, thermal stability and electronic structure of Na{sub 3}Sn{sub 2}F{sub 6}Cl are characterized and the results reveal that this compound has and indirect bandgap of 3.88 eV and is stable under 270 °C. - Graphical abstract: A zero-dimensional alkaline tin halide compound, Na{sub 3}Sn{sub 2}F{sub 6}Cl, is synthesized by hydrothermal method. Interestingly, both the anions and cations coordinating polyhedra exhibit order arranged with the [SnF{sub 3}]{sup -} trigonal pyramids rotating along the c- axis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Deformation Mechanisms and Formability Window for As-Cast Mg-6Al-2Ca-1Sn-0.3Sr Alloy (MRI 230D)

The hot deformation characteristics of MRI 230D alloy have been evaluated in the temperature range 260-500 °C and strain rate range 0.0003-10 s{sup −1}, on the basis of processing map. The processing map exhibited two domains in the ranges: (1) 300-370 °C and 0.0003-0.001 s{sup −1} and (2) 370-480 °C and 0.0003-0.1 s{sup −1}. Dynamic recrystallization occurs in the both domains with basal slip dominating in the first domain along with climb as recovery process and second-order pyramidal slip dominating in the second with the recovery by cross-slip. In Domains (1) and (2), the apparent activation energy values estimated using the kinetic rate equation are 143 and 206 kJ/mole, respectively, the first one being close to that for lattice self-diffusion confirming climb. It is recommended that the alloy is best processed at 450 °C and strain rates less than 0.1 s{sup −1}, where non-basal slip and cross-slip occur extensively to impart excellent workability. The alloy exhibits flow instability in the form of adiabatic shear band formation and flow localization at lower temperatures and higher strain rates. Forging of a cup-shaped component was performed under various conditions, and the results validated the predictions of the processing map on the workability domains as well as the instability regimes.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Investigation of structural and electrochemical properties of LaSrCo{sub 1−x}Sb{sub x}O{sub 4} (0≤x≤0.20) as potential cathode materials in intermediate-temperature solid oxide fuel cells

The structural and electrochemical properties of the layered perovskite oxides LaSrCo{sub 1−x}Sb{sub x}O{sub 4} (0≤x≤0.20) were investigated to study the effects of substituting Sb for Co for application as cathode materials in intermediate temperature solid oxide fuel cells (IT-SOFCs). The results of crystal structure analyses show the maximum content of Sb in LaSrCo{sub 1−x}Sb{sub x}O{sub 4} to be 0.05 as a pure single phase. XPS shows that Co and Sb in LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} may possess mixed-oxidation states. The electrical conductivity increased greatly after Sb substitution. An improvement in the cathode polarization (R{sub p}) values is observed from the Sb-doped sample with respect to the undoped samples. For example, R{sub p} of LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} on LSGM was observed to be 0.16 Ω cm{sup 2} at 800 °C in air. The main rate-limiting step for LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} cathode is charge transfer of oxygen atoms. These results indicate that Sb can be incorporated into LaSrCo{sub 1−x}Sb{sub x}O{sub 4} based materials and can have a beneficial effect on the performance, making them potentially suitable for use as cathode materials in IT-SOFCs. - Graphical abstract: The oxygen partial pressure dependence of polarization resistances for a new layered perovskite cathode LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} at various temperatures was measured. - Highlights: • The maximum content of Sb was 0.05 mol in LaSrCo{sub 1−x}Sb{sub x}O{sub 4}. • The maximum electrical conductivity is 194 S cm{sup −1}for LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} at 800 °C. • A rate-limiting process of charge transfer presented.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Diameter dependent thermoelectric properties of individual SnTe nanowires

The lead-free compound tin telluride (SnTe) has recently been suggested to be a promising thermoelectric material. In this work, we report on the first thermoelectric study of individual single-crystalline SnTe nanowires with different diameters ranging from ~ 218 to ~ 913 nm. Measurements of thermopower S, electrical conductivity σ and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, the thermopower increases by a factor of two when the nanowire diameter is decreased from ~ 913 nm to ~ 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may arise from the enhanced phonon - surface boundary scattering and phonon-defect scattering. Lastly, temperature dependent figure of merit ZT was determined for individual nanowires and the achieved maximum value at room temperature is about three times higher than that in bulk samples of comparable carrier density.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells

We present a device model for the hydrazine processed kesterite Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V{sub OC}, J{sub SC}, FF, and efficiency under normal operating conditions, and temperature vs. V{sub OC}, sun intensity vs. V{sub OC}, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V{sub OC} data. These findings point to the importance of tail states in CZTSSe solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spectroscopic ellipsometry study of Cu{sub 2}ZnSnSe{sub 4} bulk crystals

Using spectroscopic ellipsometry we investigated and analyzed the pseudo-optical constants of Cu{sub 2}ZnSnSe{sub 4} bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV photon energy range. The structures found in the spectra of the complex pseudodielectric functions were associated to E{sub 0}, E{sub 1A}, and E{sub 1B} interband transitions and were analyzed in frame of the Adachi's model. The interband transition parameters such as strength, threshold energy, and broadening were evaluated by using the simulated annealing algorithm. In addition, the pseudo-complex refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity were derived over 0.8–4.5 eV photon energy range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Calorimetric study of tellurium rich Se-Te-Sn glasses

We report the calorimetric study of amorphous Se{sub 30}Te{sub 70-x} Sn{sub x} alloys for x= 0, 1.5, 2.5, 4.5 in terms of kinetic parameters. The DSC curves recorded at four different heating rates are analyzed to determine the transition temperatures, activation energy, thermal stability, glass forming ability. The crystallization process has been investigated using Kissinger, Matusita, Augis and Bennett, and Gao and Wang models. Various kinetic parameters have been calculated for a better understanding of the growth mechanism. The glass transition temperatures T{sub g}, onset crystallization T{sub c}, peak crystallization T{sub p}, and melting temperature T{sub m} are found to increase with the increase in Sn content. The system under investigation is found to be thermally stable for at lower at% of Sn. The values of parameters H{sub R}, H{sub w}, and S indicate that Glass forming ability (GFA) decays with an increase in Sn content.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of air annealing on structure and magnetic properties of Sn{sub 1-x}Fe{sub x}O{sub 2} thin films

Sn{sub 1-x}Fe{sub x}O{sub 2} (x = 0.07) thin films were prepared on to glass substrates using flash evaporation technique and annealed in air at different temperatures. The X-ray diffraction study showsed that all the thin films annealed at different temperatures were in tetragonal rutile structure of SnO{sub 2}. The Elemental analysis confirms the presence of Fe and Sn and O in the films. The magnetic measurements were carried out using vibrating sample magnetometer and found that the strength of magnetization decreased with increase of annealing temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Cadmium effect on structural properties of Cu{sub 2}Zn{sub 1-x}Cd{sub x}SnS{sub 4} quinternary alloys nanostructures

The study report novel sensing plat of extended quinternart materials, Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures were fabricated onto oxidized silicon substrate by sol-gel method and characterized were synthesized by X-ray diffraction (XRD). The XRD peaks were shifted towered the lower angle side with increasing cadmium content. The practical size average of the Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures between 34.55 to 63.30 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Low-Afterglow Scintillators for High-Rate Radiation Detection

The present work reports on the development of two types of metal-loaded plastic scintillators that seek to improve the decay kinetics and light-yield properties of existing materials used for high count-rate radiation detection. The strategy followed in this work involves the addition of an organometallic iridium or organometallic tin compound to reduce the extent of deleterious delayed luminescence following exposure to ionizing radiation. Key results include a seven times greater light yield compared to existing high-rate scintillators (i.e. BC422Q plastic, stilbene-doped bizenzyl crystal), while achieving comparable or even faster decay characteristics than these benchmark materials.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Structural, optoelectronic, infrared and Raman spectra of orthorhombic SrSnO{sub 3} from DFT calculations

Orthorhombic SrSnO{sub 3} was investigated using density functional theory (DFT) considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The electronic band structure, density of states, complex dielectric function, optical absorption, and the infrared and Raman spectra were computed. Calculated lattice parameters are close to the experimental measurements, and an indirect band gap E(S{yields}{Gamma})=1.97eV (2.27 eV) was obtained within the GGA (LDA) level of calculation. Effective masses for holes and electrons were estimated, being very anisotropic in comparison with similar results for orthorhombic CaSnO{sub 3}. The complex dielectric function and the optical absorption of SrSnO{sub 3} were shown to be sensitive to the plane of polarization of the incident light. The infrared spectrum between 100 and 600 cm{sup -1} was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum of orthorhombic SrSnO{sub 3} was achieved. -- Graphical abstract: Orthorhombic SrSnO{sub 3}: a view of the unit cell (left) and plots showing the calculated and experimental Raman spectra (right). Display Omitted Research highlights: {yields} We have performed DFT calculations on orthorhombic SrSnO{sub 3} crystals, obtaining their structural, electronical and optical properties. {yields} An indirect band gap was obtained, and anisotropic effective masses were found for both electrons and holes. {yields} The complex dielectric function and the optical absorption of SrSnO{sub 3} were shown to be very sensitive to the plane of polarization of the incident light. {yields} The infrared spectrum between 100 and 600 cm{sup -1} was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum was achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Fabrication of a Demountable TM{sub 020} Cavity from Large Grain Ingot Methods

A novel TM{sub 020} demountable test cavity has been fabricated by the Spallation Neutron Source (SNS) from large grain niobium ingot sheets. This TM{sub 020} cavity is designed to have a demountable test plate at the base of the cavity to allow for measuring RF properties as well as performing surface science analysis in an aim to develop plasma processing as a cleaning method for niobium cavities. Large grain ingot sheet fabrication methods were chosen to reduce the cost of the cavity and to produce smooth surfaces at high electric field locations with standard chemistry techniques, i.e. buffered chemical polish.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Growth of Cu{sub 2}ZnSnS{sub 4} Films by Sputtering with Post-Sulfurization

We have fabricated Cu{sub 2}ZnSnS{sub 4} films by sputtering of stacked Cu/Sn/Cu/Zn films and subsequent sulfurizations. The sulfurizations were carried out at different temperatures, i.e., 520 deg. C(CZTS lowbar L film) and 570 deg. C(CZTS lowbar H film). The CZTS lowbar L film showed impurity phase, SnS{sub 2}, in X-ray diffraction (XRD) result and a lower optical band gap, {approx}1.3 eV. Further, in CZTS lowbar L film localized highly Zn-rich and Zn-rich phases were observed. For the CZTS lowbar H film, no segregated impurity phase was observed in XRD result, but Sn-poor phases were observed all over the film surface. The optical band gap of CZTS lowbar H film was observed to be {approx}1.4 eV.

36 MATERIALS SCIENCE↗