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Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range than can sufficiently pump multi-pixel imaging arrays.
Recent results from the Heterodyne Instrument for the Far-Infrared (HIFI) on the Herschel Space Telescope have confirmed the usefulness of high resolution spectroscopic data for a better understanding of our Universe. This paper will explore the current status of tunable local oscillator sources with emphasis on building a multi-pixel LO subsystem for the scientifically important CII line around 1908 GHz. Recent results have shown that over 50 microwatts of output power at 1.9 THz are possible with an optimized single pixel LO chain. These power levels are now sufficient to pump array receivers in this frequency range. Further power enhancement can be obtained by cooling the chain to 120 K or by utilizing in-phase power combining technology.
Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.
This presentation briefly discusses a research effort on Terabit Wireless communication systems for possible space applications. Recently, terahertz (THz) technology (300-3000 GHz frequency) has attracted a great deal of interest from academia and industry. This is due to a number of interesting features of THz waves, including the nearly unlimited bandwidths available, and the non-ionizing radiation nature which does not damage human tissues and DNA with minimum health threat. Also, as millimeter-wave communication systems mature, the focus of research is, naturally, moving to the THz range. Many scientists regard THz as the last great frontier of the electromagnetic spectrum, but finding new applications outside the traditional niches of radio astronomy, Earth and planetary remote sensing, and molecular spectroscopy particularly in biomedical imaging and wireless communications has been relatively slow. Radiologists find this area of study so attractive because t-rays are non-ionizing, which suggests no harm is done to tissue or DNA. They also offer the possibility of performing spectroscopic measurements over a very wide frequency range, and can even capture signatures from liquids and solids. According to Shannon theory, the broad bandwidth of the THz frequency bands can be used for terabit-per-second (Tb/s) wireless communication systems. This enables several new applications, such as cell phones with 360 degrees autostereoscopic displays, optic-fiber replacement, and wireless Tb/s file transferring. Although THz technology could satisfy the demand for an extremely high data rate, a number of technical challenges need to be overcome before its development. This presentation provides an overview the state-of-the- art in THz wireless communication and the technical challenges for an emerging application in Terabit wireless systems. The main issue for THz wave propagation is the high atmospheric attenuation, which is dominated by water vapor absorption in the THz frequency band. The technical challenges in design such a system and the techniques to overcome the challenges will be discussed in this presentation.
The last decade has seen a number of technological advancements that have now made it possible to implement fully solid state local oscillator chains up to 2 THz. These chains are composed of cascaded planar multiplier stages that are pumped with W-band high power sources. The high power W-band sources are achieved by power combining MMIC amplifiers and can provide in access of 150 mW with about 10% bandwidth. Planar diode technology has also enabled novel circuit topologies that can take advantage of the high input power and demonstrate significant efficiencies well into the THz range. Cascaded chains to 1.9 THz have now been demonstrated with enough output power to successfully pump hot-electron bolometer mixers in this frequency range. An overview of the current State-of-the-Art of the local oscillator technology will be presented along with highlighting future trends and challenges.
Since its founding in 1958, NASA has pioneered the use of different frequencies on the electromagnetic spectrum - including X-ray, microwave, and infrared wavelengths - to gather information about distant celestial bodies. During the 1962 Mariner 2 mission, NASA used microwave radiometers that operated in the range of 15-23 gigahertz (GHz) to assess the surface temperature of Venus and to determine the percentage of water vapor in its atmosphere. Today, there is another area on the spectrum proving uniquely useful to scientists: the terahertz (THz) range, spanning from about 100 GHz-10,000 GHz. (1 THz equals approximately 1,000 GHz.) Terahertz frequencies span the lesser-known gap on the electromagnetic spectrum between microwave radiation and infrared (and visible) light, falling within the spectral range where most simple molecules resonate. This molecular resonance makes terahertz particularly useful for chemical spectroscopy and the remote sensing of specific molecules. In the 1990s, NASA began using frequencies above 300 GHz (more than an order of magnitude higher than the instrumentation on Mariner 2) to perform spectral analysis of molecular clouds and planetary atmospheres. Instruments using these higher frequencies have included the Microwave Limb Sounder (MLS) on the Upper Atmosphere Research Satellite (UARS), deployed from 1991-2001, and the Microwave Instrument for the Rosetta Orbiter (MIRO), launched in 2004. With UARS-MLS, NASA used advanced terahertz receivers to measure the emission signatures from atmospheric molecules, providing researchers with valuable data about the changes in the Earth s protective ozone layer. MIRO, set to rendezvous with the comet 67P Churyumov-Gerasimenko in 2014, will use terahertz instrumentation to analyze the comet s dust and gases. Although NASA has been a driving force behind the development of terahertz technology, scientific equipment for terahertz research - including transmitters, receivers, and basic test and measurement equipment - is not widely available, making scientific experiments in this range between traditional electronics and quantum photonics more costly and greatly limiting commercial development in the field. Given NASA s interest in studying distant bodies in space as well as in improving life on Earth, the Agency has collaborated with private industry to develop terahertz technologies.
This paper explores the capabilities of a class of metasurface (MTS), which consists of metalized cylinders on a ground plane, for the realization of modulated MTS antennas at terahertz (THz) frequencies. The proposed structure is particularly appropriate for being micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The constraints that DRIE imposes in the design of the MTS unit cell are discussed, along with the advantages of silicon micromachined modulated MTSs with respect to other fabrication approaches in the THz range.
The GOES X28 flare of 4 November 2003 was the largest ever recorded in its class. It produced the first evidence for two spectrally separated emission components, one at microwaves and the other in the THz range of frequencies.We analyzed the pre-flare phase of this large flare, twenty minutes before the onset of the major impulsive burst. This periodis characterized by unusual activity in X-rays, sub-THz frequencies, H, and microwaves.The CME onset occurred before the onset of the large burst by about 6 min.
The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.
The design and construction of low-loss monolithic transmission lines are critical to systems which require that terahertz-power be guided to the antenna front ends. Two types of novel monolithic guiding structures, designed for the 0.3-2.0 THz and 0.1-0.3 THz ranges, respectively, are proposed. The novel waveguides are constructed from dielectric materials and structures which are available in monolithic technology so that the integration of active devices is possible. Propagation in each of the waveguides is characterized over relevant frequency ranges by applying a mode-matching technique, which takes into account all forms of electromagnetic coupling as well as losses in the dielectrics. The structures are predicted to exhibit excellent power confinement and low losses.
Frequency multiplier circuits based on planar GaAs Schottky diodes have made significant advances in the last decade. Useful power in the >1 THz range has now been demonstrated from a complete solid-state chain. This paper will review some of the technology responsible for this achievement along with presenting a brief look at future challenges.
A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.
We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
Planar Schottky diode technology has been utilized to fabricate high-power broad-band monolithic multiplier circuits that can produce appreciable power well into the THz range. The chip fabrication technology that has been developed allows for robust circuit designs that can be easily packaged in conventional waveguide blocks. An overview of the capability of GaAs based Schottky diode multipliers will be presented.
In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.
Despite great scientific interest since at least the 1920's, the THz frequency range remains on e of the least tapped regions of the electromagnetic spectrum. Sandwiched between traditional microwave and optical technologies where there is a limited atmospheric propagation path, little commercial emphasis has been placed on THz systems. This has, perhaps fortunately, preserved some unique science and applications for tomorrow's technologies. For over 25 years the sole niche for THz technology has been in the high resolution spectroscopy and remote sensing areas where heterodyne and Fourier transform techniques have allowed astronomers, chemists, Earth, planetary and space scientists to measure, catalog and map thermal emission lines for a wide variety of lightweight molecules. As it turns out, no where else in the electromagnetic spectrum do we receive so much information about these chemical species. In fact, the universe is bathed in THz energy, most of it going unnoticed and undetected.