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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

On the symmetry TFT of Yang-Mills-Chern-Simons theory

Three-dimensional Yang-Mills-Chern-Simons theory has the peculiar property that its one-form symmetry defects have nontrivial braiding, namely they are charged under the same symmetry they generate, which is then anomalous. This poses a few puzzles in describing the corresponding Symmetry TFT in a four-dimensional bulk. First, the braiding between lines at the boundary seems to be ill-defined when such lines are pulled into the bulk. Second, the Symmetry TFT appears to be too trivial to allow for topological boundary conditions encoding all the different global variants. We show that both of these puzzles can be solved by including endable (tubular) surfaces in the class of bulk topological operators one has to consider. In this way, we are able to reproduce all global variants of the theory, with their symmetries and their anomalies. We check the validity of our proposal also against a top-down holographic realization of the same class of theories.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

a-Si:H TFT-silicon hybrid low-energy x-ray detector

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers for X-ray diffraction and crystallography applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Fully R2R-Printed Carbon-Nanotube-Based Limitless Length of Flexible Active-Matrix for Electrophoretic Display Application

A limitless-length flexible active-matrix implies that virtually any surface can be rendered into an interactive medium when laminated with electrophoretic or organic light-emitting diode sheets. However, performance, cost, and size limitations of current fabrication technologies and semiconducting materials, typically utilized in thin film transistor (TFT) active matrices (TFT-AMs), have hindered progress, thus preventing the realization of fully printed TFT-AMs on a plastic roll. Here, a new high-purity semiconducting single-walled carbon nanotube (s-SWCNT) ink is prepared by first isolating 99.9% pure s-SWCNTs via conjugated polymer extraction, and then utilizing a ligand-exchange method to formulate a novel hydrophilic gravure-compatible semiconducting ink. Based on the s-SWCNT ink, a fully additive manufacturing process using roll-to-roll (R2R) gravure printing enables the fabrication of a flexible TFT-AM, overcoming performance, cost, and size limitations. TFT-AMs with 10 to 40 PPI resolution where average mobility of 0.23 ± 0.12 cm 2 V –1 s –1 , average on–off ratio of 10 4.1 , and threshold voltage variation of ±13% are attained. As a proof of concept, an inexpensive and flexible electrophoretic display is demonstrated by simply laminating an electrophoretic sheet onto the R2R gravure-printed s-SWCNT-based TFT-AM.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm{sup 2}/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10{sup −13} A) and OPD (<10{sup −8} A/cm{sup 2}) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. Conclusions: The proposed a-IGZO APS x-ray imager with a pixel pitch <75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Data-driven modeling of dynamic occupant thermostat override behavior for demand response applications

Buildings consume nearly 40% of global energy and produce similar emissions. Whiletechnological advances address efficiency, occupant behavior causes energy use variations up to 300% between identical buildings. This gap between predicted and actual building performance impacts building design, operations, and grid demand management programs. Through analyses of smart thermostat data from 1,400 single-occupant homes, the researchdemonstrates that occupants respond to 8°F thermostat setpoint changes within a median of 15 minutes, while 2°F changes trigger responses within a median of 30 minutes. This highlights an understudied temporal relationship between thermostat setbacks and response time of occupant behaviors. Models of such behavior dynamics are required to incorporate occupant impacts into building performance simulation. A key contribution of this dissertation is the Thermal Frustration Theory (TFT), which positsthat thermal discomfort driven behaviors are caused by the time-accumulation of discomfort, not simply a temperature deviation threshold or a delay from an initiating event. Using a dataset of 634 thermostats, each with 25+ manual setpoint changes, a comparative analysis of TFT and comfort zone and a delayed response theories demonstrated that personalized TFT models better predict when manual setpoint change occur. This was measured by the area under the curve statistical measure (AUC); all three models perform similarly by a Matthews Correlation Coefficient measure. Higher AUC performance is especially important for modeling occupant behavior in demand response programs where false negatives of rare occupant interactions could adversely affect grid stability. EnergyPlus based simulations were conducted with TFT-derived occupant models, demonstrating the ability to identify parameters of known TFT models from only data observable with smart thermostats, even under the presence of noise from routine overrides. Overall, the dissertation highlights that thermostat interactions are neither static,instantaneous, nor driven solely by the environment. Instead, temporal accumulation of discomfort and routine-based behavior play important roles. The methodology and results offer a pathway towards more accurate modeling of human-building interactions for policy assessment, building design, and demand response programs.

Sharma, Kunind [Northeastern University] (ORCID:00↗
DOE OSTI2017

Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

Highlights: • We fabricated AOS TFTs using Al co-sputtered IZO thin films as active layers. • Low Al ratio in IZO thin films suppresses carrier concentration and oxygen vacancies. • Addition of 0.62 wt.% Al into IZO could reduce the chance of creating trap states. • Fabricated Al-IZO TFT has improved bias stability under bias stress conditions. • Optical transmittance of Al-IZO film greater than 90% in visible light (400–800 nm). - Abstract: The electrical performance and bias stability of radio-frequency magnetron co-sputtered aluminum-indium-zinc oxide (Al-IZO) thin-film transistors (TFTs) were investigated, with respect to the atomic proportions of Al. Other parameters such as the indium-zinc oxide (IZO) target power, oxygen partial pressure, and initial and process pressures of the chamber were fixed. At a low Al atomic ratio (0.62 wt.%), the electrical performance and bias stability of the Al-IZO TFT were optimized because of the suppression of the generation of oxygen vacancies and the strong bond between Al and oxygen atoms (Al–O; 501.9 kJ/mol). Compared to pure IZO TFTs, the Al-IZO TFT exhibited a small shift in the threshold voltage under bias stress conditions. A higher threshold voltage of −2.24 V and an improved subthreshold swing of 1.35 V/dec were also observed. We demonstrated that the Al-IZO TFT could be a promising candidate for switching and driving operations in mass-produced display applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topological field theory with Haagerup symmetry

Here, we construct a (1 + 1)d topological field theory (TFT) whose topological defect lines (TDLs) realize the transparent Haagerup $\mathscr{H}$ 3 fusion category. This TFT has six vacua, and each of the three non-invertible simple TDLs hosts three defect operators, giving rise to a total of 15 point-like operators. The TFT data, including the three-point coefficients and lasso diagrams, are determined by solving all the sphere four-point crossing equations and torus one-point modular invariance equations. We further verify that the Cardy states furnish a non-negative integer matrix representation under TDL fusion. While many of the constraints we derive are not limited to this particular TFT with six vacua, we leave open the construction of TFTs with two or four vacua. Finally, TFTs realizing the Haagerup $\mathscr{H}$ 1 and $\mathscr{H}$ 2 fusion categories can be obtained by gauging algebra objects. This article makes a modest offering in our pursuit of exotica and the quest for their eventual conformity.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

A RECONNECTION-DRIVEN MODEL OF THE HARD X-RAY LOOP-TOP SOURCE FROM FLARE 2004 FEBRUARY 26

A compact X-class flare on 2004 February 26 showed a concentrated source of hard X-rays at the tops of the flare’s loops. This was analyzed in previous work and interpreted as plasma heated and compressed by slow magnetosonic shocks (SMSs) generated during post-reconnection retraction of the flux. That work used analytic expressions from a thin flux tube (TFT) model, which neglected many potentially important factors such as thermal conduction and chromospheric evaporation. Here we use a numerical solution of the TFT equations to produce a more comprehensive and accurate model of the same flare, including those effects previously omitted. These simulations corroborate the prior hypothesis that slow-mode shocks persist well after the retraction has ended, thus producing a compact, loop-top source instead of an elongated jet, as steady reconnection models predict. Thermal conduction leads to densities higher than analytic estimates had predicted, and evaporation enhances the density still higher, but at lower temperatures. X-ray light curves and spectra are synthesized by convolving the results from a single TFT simulation with the rate at which flux is reconnected, as measured through motion of flare ribbons, for example. These agree well with light curves observed by RHESSI and GOES and spectra from RHESSI . An image created from a superposition of TFT model runs resembles one produced from RHESSI observations. This suggests that the HXR loop-top source, at least the one observed in this flare, could be the result of SMSs produced in fast reconnection models like Petschek’s.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm{sup 2}/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 10{sup 6}, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors

We compared the structural properties and electrical characteristics of high-κ Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu{sub 2}O{sub 3} film has a strong Lu{sub 2}O{sub 3} (400) peak in the X-ray diffraction pattern, while the Lu{sub 2}TiO{sub 5} sample shows a relatively weak Lu{sub 2}TiO{sub 5} (102) peak. Atomic force microscopy reveals that the Lu{sub 2}O{sub 3} dielectric exhibits a rougher surface (about three times) than Lu{sub 2}TiO{sub 5} one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding to Lu(OH){sub x} for Lu{sub 2}O{sub 3} film was higher than that of Lu{sub 2}TiO{sub 5} film. Furthermore, compared with the Lu{sub 2}O{sub 3} dielectric, the α-InGaZnO TFT using the Lu{sub 2}TiO{sub 5} gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher I{sub on}/I{sub off} current ratio (from 3.5 × 10{sup 6} to 1.3 × 10{sup 8}), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm{sup 2}/V s). These results are probably due to the incorporation of TiO{sub x} into the Lu{sub 2}O{sub 3} film to form a Lu{sub 2}TiO{sub 5} structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric–channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass

Tunable surface acoustic wave (SAW) devices have attracted considerable interests due to its applications in emerging fields, such as secured wireless communication, adaptive signal processing, and smart sensing systems. We report a dual-input-voltage-controlled tunable SAW built on glass, which uses a ZnO-based dual-layer structure consisting of a piezoelectric Ni- doped ZnO (NZO) and semiconducting Mg-doped ZnO (MZO). The interdigital (IDT) electrodes are buried in the piezoelectric NZO layer to form the delay line for SAW propagation, while the semiconductor MZO layer serves as the channel of a thin film transistor (TFT) to modulate the conductivity. Results show the interface between MZO channel and SiO 2 gate dielectric layer of the TFTT significantly impacts on SAW tuning performances due to Zn diffusion from MZO into SiO 2 . The TFT-SAW device using an ultra-thin MgO layer as interface modification enables SAW frequency tuning of 0.53% under solely V gs control with 0–12 V. The required voltage range is significantly reduced compared regular MZO-NZO TFT-SAW counterpart (Δf/f c ~ 0.25%; V gs –30 to –14 V) without interface modification. With additional control of V ds , the SAW frequency tunability is further expanded from 0.46% to 0.63%. As a result, this dual-input voltage-controlled frequency tuning device on glass is promising for low-voltage, low-cost portable smart sensors and voltage-controlled reconfigurable radio-frequency identification tags.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Explainable AI for Multivariate Time Series Pattern Exploration: Latent Space Visual Analytics With Temporal Fusion Transformer and Variational Autoencoders in Power Grid Event Diagnosis

Detecting and analyzing complex patterns in multivariate time-series data is crucial for decision-making in urban and environmental system operations. However, challenges arise from the high dimensionality, intricate complexity, and interconnected nature of complex patterns, which hinder the understanding of their underlying physical processes. Existing AI methods often face limitations in interpretability, computational efficiency, and scalability, reducing their applicability in real-world scenarios. This paper proposes a novel visual analytics framework that integrates two generative AI models, Temporal Fusion Transformer (TFT) and Variational Autoencoders (VAEs), to reduce complex patterns into lower-dimensional latent spaces and visualize them in 2D using dimensionality reduction techniques such as PCA, t-SNE, and UMAP with DBSCAN. These visualizations, presented through coordinated and interactive views and tailored glyphs, enable intuitive exploration of complex multivariate temporal patterns, identifying patterns’ similarities and uncover their potential correlations for a better interpretability of the AI outputs. The framework is demonstrated through a case study on power grid signal data, where it identifies multi-label grid event signatures, including faults and anomalies with diverse root causes. Additionally, novel metrics and visualizations are introduced to validate the models and assess the performance, efficiency, and consistency of latent maps generated by VAE, which have been utilized in prior studies for latent space cartography and used as a benchmark in this study, and the emerging TFT architecture under various configurations. These analyses provide actionable insights for model parameter tuning and reliability improvements. Comparative results highlight that TFT achieves shorter run times and superior scalability to diverse time-series data shapes compared to VAE. This work advances fault diagnosis in multivariate time series, fostering explainable AI to support critical system operations.

Explainable AI↗
DOE OSTI2015

SU-E-I-49: Simulation Study for Removing Scatter Radiation in Cesium-Iodine Based Flat Panel Detector System

Purpose: This study aims to identify the feasibility of a novel cesium-iodine (CsI)-based flat-panel detector (FPD) for removing scatter radiation in diagnostic radiology. Methods: The indirect FPD comprises three layers: a substrate, scintillation, and thin-film-transistor (TFT) layer. The TFT layer has a matrix structure with pixels. There are ineffective dimensions on the TFT layer, such as the voltage and data lines; therefore, we devised a new FPD system having net-like lead in the substrate layer, matching the ineffective area, to block the scatter radiation so that only primary X-rays could reach the effective dimension.To evaluate the performance of this new FPD system, we conducted a Monte Carlo simulation using MCNPX 2.6.0 software. Scatter fractions (SFs) were acquired using no grid, a parallel grid (8:1 grid ratio), and the new system, and the performances were compared.Two systems having different thicknesses of lead in the substrate layer—10 and 20μm—were simulated. Additionally, we examined the effects of different pixel sizes (153×153 and 163×163μm) on the image quality, while keeping the effective area of pixels constant (143×143μm). Results: In case of 10μm lead, the SFs of the new system (∼11%) were lower than those of the other system (∼27% with no grid, ∼16% with parallel grid) at 40kV. However, as the tube voltage increased, the SF of new system (∼19%) was higher than that of parallel grid (∼18%) at 120kV. In the case of 20μm lead, the SFs of the new system were lower than those of the other systems at all ranges of the tube voltage (40–120kV). Conclusion: The novel CsI-based FPD system for removing scatter radiation is feasible for improving the image contrast but must be optimized with respect to the lead thickness, considering the system’s purposes and the ranges of the tube voltage in diagnostic radiology. This study was supported by a grant(K1422651) from Institute of Health Science, Korea University.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

The Art of War: Beyond Memory-one Strategies in Population Games

We show that the history of play in a population game contains exploitable information that can be successfully used by sophisticated strategies to defeat memory-one opponents, including zero determinant strategies. The history allows a player to label opponents by their strategies, enabling a player to determine the population distribution and to act differentially based on the opponent’s strategy in each pairwise interaction. For the Prisoner’s Dilemma, these advantages lead to the natural formation of cooperative coalitions among similarly behaving players and eventually to unilateral defection against opposing player types. We show analytically and empirically that optimal play in population games depends strongly on the population distribution. For example, the optimal strategy for a minority player type against a resident TFT population is ALLC, while for a majority player type the optimal strategy versus TFT players is ALLD. Such behaviors are not accessible to memory-one strategies. Drawing inspiration from Sun Tzu’s the Art of War, we implemented a non-memory-one strategy for population games based on techniques from machine learning and statistical inference that can exploit the history of play in this manner. Via simulation we find that this strategy is essentially uninvadable and can successfully invade (significantly more likely than a neutral mutant) essentially all known memory-one strategies for the Prisoner’s Dilemma, including ALLC (always cooperate), ALLD (always defect), tit-for-tat (TFT), winstay-lose-shift (WSLS), and zero determinant (ZD) strategies, including extortionate and generous strategies.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

High-throughput fabrication and semi-automated characterization of oxide thin film transistors

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatiallyresolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semiautomated characterization using sputtered oxide TFTs as a case study. Here, we show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.

36 MATERIALS SCIENCE↗