SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Resistance thermometer incorporating a germanium resistance element with a platinum resistance element in a wheatstone bridge circuit has a linear temperature-resistance coefficient over a range from approximately minus 140 deg C to approximately minus 253 deg C.
Temperature coefficients for resistivity of n- and p-type germanium and silicon near room temperature
Temperature coefficients measured in solar simulators with those measured under AM0 solar illumination are compared to illustrate the challenges in making these measurements. It is shown that simulator measurements of the short-circuit current (delta Jsc/delta T) are inaccurate due to the mismatch between the solar spectrum and the simulators at the bandgaps of the solar cells. Especially susceptible to error is the delta Jsc/delta T of cells which are components in monolithic multijunction solar cells, such as GaAs filtered by 1.93-eV AlGaAs, which has an AM0 coefficient of 6.82 micro-A/sq cm/deg C, compared to a Xenon simulator coefficient of 22.2 micro-A/sq cm/deg C.
The magnetization of most magnetic materials decreases monotonically with increasing temperature. In this work, we found that the temperature coefficient of magnetization of Mn 4-x Ga x C alloys can be tuned from negative values to positive values by controlling the composition x. The antiperovskite type Mn 4-x Ga x C (0.05 ≤ x ≤ 0.75) alloys were prepared by using induction melting method, which is more efficient in large-scale production and obtaining full-density alloys in comparison with the traditional solid-state-reaction method. The values of the temperature coefficient of magnetization of Mn 4-x Ga x C change continuously from negative to positive with decreasing x. The Mn 4-x Ga x C alloys with highly thermal-stable magnetization is expected to present in the composition range of 0.15 < x < 0.25. The saturation magnetization of Mn 4-x Ga x C increases with increasing x, owing to the reduced number of antiferromagnetically coupled Mn atoms at the cubic corner with the face centered Mn atoms. Most Mn 4-x Ga x C alloys with varying x display near-zero remanent magnetization and coercivity at room temperature. The Currie temperature of Mn 4-x Ga x C decreases with increasing x. The x-ray photoelectron spectra of Mn 2p, Ga 2p, and C 1 s reveal distinct splitting due to the diverse chemical states of these atoms at different lattice positions and/or phases. Our work has developed a class of alloys capable of offering a desired temperature coefficient of magnetization across a broad temperature range, thereby offering a method to manipulate the thermodynamics of magnetization.
Temperature coefficient of resistance in thin metal films, using Sondermayer analysis for vapor deposited Au, Ag and Cu films
We have measured the temperature coefficient of the output of several ratio transformers at ratios near 0.500,000 using an ac bridge and a dual-phase, lock-in amplifier. The two orthogonal output components were each resolved to +/- ppb of the bridge drive signal. The results for three commercial ratio transformers between 20 and 50 C range from 0.5 to 100 ppb/K for the signal component in phase with the bridge drive, and from 4 to 300 ppb/K for the quadrature component.
The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
Energy conversion efficiency is an important parameter for solar cells, and well reported in the literature. However, solar cells heat up in sunlight, and the efficiency decreases. The temperature coefficient of the conversion efficiency is thus also extremely important, especially in mission modeling, but is much less well reported. It is of value to have a table which compiles into a single document values of temperature coefficients reported in the literature. In addition to modeling performance of solar cells in Earth orbit, where operating temperatures may range from about 20 C to as high as 85 C, it is of interest to model solar cells for several other recently proposed missions. These include use for the surface of Mars, for solar electric propulsion missions that may range from Venus to the Asteroid belt, and for laser-photovoltaic power that may involve laser intensities equivalent several suns. For all of these applications, variations in operating temperature away from the nominal test conditions result in significant changes in operating performance. In general the efficiency change with temperature is non-linear, however, in the range from negative 100 C through room temperature to a few hundred degrees C, efficiency is usually quite well modeled as a linear function of temperature (except for a few unusual cell types, such as amorphous silicon, and for extremely low bandgap cells, such as InGaAs).
Data are presented on the Isc, Voc and Pmax temperature coefficients for several small concentrator solar cells. The cells are AlGaAs (1.72 eV), GaAs, silicon and InGaAs (1.1 eV) concentrator cells operating at 6.25 and 100 times AM0. The temperature range covered was 25 to 100 C. Cells were irradiated with 1-MeV electrons and 37-MeV protons, and data are presented at different fluence levels.
Experimental data are presented on the variation of the modulus of rigidity in the temperature range -20 to +50 degrees C. of a number of metals which are of possible use for elastic elements for aircraft and other instruments. The methods of the torsional pendulum was used to determine the modulus of rigidity and its temperature coefficient for aluminum, duralumin, monel metal, brass, phosphor bronze, coin silver, nickel silver, three high carbon steels, and three alloy steels. It was observed that tensile stress affected the values of the modulus by amounts of 1 per cent or less.
Abstract Aerosol jet printing (AJP) is an emerging direct write tool enabling rapid prototyping and fabrication of electronics components. AJP provides faster and less expensive production of devices with feature sizes of >10 microns compared to traditional MEMS processes. Herein, the fabrication of a resistance temperature detector‐micro hotplate (RTD‐µHP) is reported using AJP printed silver. AJP eliminates sophisticated MEMS processes such as masking, alignment, and etching. The compatibility of the AJP process with a broad range of materials is demonstrated by printing highly resolved lines on rigid and flexible substrates. Optimal thermal sintering conditions of AJP printed silver (Ag) lines are found by in situ resistance measurements. To stabilize the temperature coefficient of resistance (TCR) of the RTD‐µHP at high operating current levels, electrical sintering is performed on the RTD‐µHPs. Electrical sintering improves the conductivity of fully thermally sintered Ag RTD‐µHPs by 32% and provides a burn‐in mechanism for stabilizing the TCR. The TCR of the RTD‐µHPs after electrical sintering is 3.80 × 10 −3 at 22 °C, close to the value for bulk Ag. The performance of the RTD‐µHPs is tested using a reference thermocouple. The RTD‐µHPs show reliable and repeatable heating and temperature sensing up to 70 °C in air.
Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.
The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.
The electrical performance characteristics of 2 and 10 ohms-cm N/P-type silicon solar cells were measured at simulated solar intensities of 5, 50, 100, 140, 250, 400, 550, 700, and 850 mW/sq cm. At each intensity, the temperature was varied in increments of 20 deg between extremes of +160 and -160 C. Short-circuit current, open-circuit voltage, and maximum power are presented in graphical format. Also described are three methods for predicting solar cell electrical performance as a function of temperature and intensity. Two of the methods are suitable for use at extreme temperature-intensity conditions. These methods were used sucessfully to predict the performance of the transducer on board the Mariner Mars 1971 spacecraft.
An approximation to the collapse-field formula is used to show its dependence on magnetization and wall energy and the effect of additions of Gd, Sm, and Eu on 1-micron Bi:YIG bubble materials. The collapse field, magnetization, and wall energy are fitted to quadratic functions of temperature from -50 to 150 C. It is shown that the addition of the various classes of rare earths reduces the temperature derivative of the collapse field in Bi:YIG. Gd influences the collapse field through the magnetization, Sm affects it through the domain wall energy, and Eu does both. The singular magnetic properties of Eu result in the most nearly constant temperature dependence of the collapse field and the best match to a barium-ferrite bias magnite.
Not provided.
Sputtering, slurry and doctor-blade techniques for depositing thin thermistor films of lanthanum- doped barium-strontium-titanate for bolometer application
Explore the source record for details and available documents.