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Results for “TANTALUM NITRIDES”

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Facile synthesis of efficient photocatalytic tantalum nitride nanoparticles

Graphical abstract: Tantalum nitride nanoparticles as a visible-light-driven photocatalyst prepared by a novel homogeneously chemical reduction of tantalum pentachloride using sodium in liquid ammonia and the morphologies, visible-light photocatalytic properties and stability of tantalum nitride nanoparticles were investigated. Highlights: ► Tantalum nitride nanoparticles have been prepared by a homogeneously chemical reduction. ► The crystal structure of tantalum nitride was determined by Rietveld refinement and XRD patterns. ► The Tantalum nitride nanoparticle size was in the range of 20–50 nm. ► Much high photocatalytic activities of Ta{sub 3}N{sub 5} nanoparticles were obtained under visible-light irradiation. -- Abstract: Tantalum nitride nanoparticles, as visible-light photocatalysts were synthesized by a two-step homogeneously chemical reduction without any polymers and templates. The well-crystallized Ta{sub 3}N{sub 5} nanoparticles with a range of 20–50 nm in size have been characterized by a number of techniques, such as XRD, XPS, SEM, TEM, BET and UV–Vis spectrum. Most importantly, the Ta{sub 3}N{sub 5} nanoparticles with good stability exhibited higher photooxidation activities in the water splitting and degradation of methylene blue under visible light irradiation than bulk Ta{sub 3}N{sub 5} particles and commercial P25 TiO{sub 2}, demonstrating that Ta{sub 3}N{sub 5} nanoparticle is a promising candidate as a visible-light photocatalyst.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Structure refinement for tantalum nitrides nanocrystals with various morphologies

Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m{sup 2} g{sup −1}. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaN{sub x}) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m{sup 2} g{sup −1}, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-pressure synthesis and compressive behavior of tantalum nitrides

WC- and NaCl-type tantalum mononitrides and hexagonal Ta{sub 5}N{sub 6} were prepared at high pressure and temperature, and their compressive behaviors were examined using in situ high-pressure X-ray diffraction. Comparison of the formula volumes of the tantalum mononitrides indicated that the NaCl type was the densest phase. The P–V data showed that the WC-type structure had the highest bulk modulus value (K{sub 0} = 351(1) GPa). An analysis of the compression properties in terms of the crystallographic characteristics of the structures indicated that a prismatic polyhedral array with face-sharing connectivity was responsible for the incompressible nature of these tantalum nitrides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Improvement of photocatalytic activity of tantalum nitride by ammonothermal treatment at high pressure

Tantalum nitride (Ta{sub 3}N{sub 5}) was treated under ammonothermal conditions with the ammonia pressure of 10 to 100 MPa at 823 K for 24 h to enhance the photocatalytic activity for hydrogen evolution from aqueous methanol solution under visible light irradiation. The rates of hydrogen evolution for all treated Ta{sub 3}N{sub 5} were faster than those for untreated Ta{sub 3}N{sub 5}. Treated Ta{sub 3}N{sub 5} showed higher enhanced activity for hydrogen evolution when treated with high-pressure ammonia at more than 50 MPa. The photocatalytic activity for hydrogen evolution of treated Ta{sub 3}N{sub 5}, related to the amount of defects, is due to reduced tantalum species. The enhancement in the activity is brought about by a decrease in surface defects, which contributes to improved electron transfer from the surface of Ta{sub 3}N{sub 5} to the loaded Pt co-catalyst. - Graphical abstract: Time course of H{sub 2} evolution for 0.5 wt% Pt- loaded Ta{sub 3}N{sub 5}. (a) As-synthesized Ta{sub 3}N{sub 5}. (b)-(e) Samples treated at 823 K for 5 h with (b) 10 MPa of N{sub 2}, (c) 10 MPa of NH{sub 3}, (d) 50 MPa of NH{sub 3}, and (e) 100 MPa of NH{sub 3}. Highlights: Black-Right-Pointing-Pointer Ta{sub 3}N{sub 5} was treated with high-pressure N{sub 2} or NH{sub 3} to enhance photocatalytic activity. Black-Right-Pointing-Pointer The hydrogen evolution activity of Ta{sub 3}N{sub 5} was more enhanced with treatment with NH{sub 3}. Black-Right-Pointing-Pointer Treatment with ammonia pressure above 50 MPa indicated a more improved activity. Black-Right-Pointing-Pointer The results of UV-vis DRS suggested decreased surface defects of treated Ta{sub 3}N{sub 5}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2000

Effects of Hydrogen on Tantalum Nitride Resistors

In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.

Weiler, James↗
DOE OSTI2026

Temperature-dependent dielectric function of tantalum nitride formed by atomic layer deposition for tunnel barriers in Josephson junctions

Here, we report the dielectric functions of insulating tantalum nitride (TaN) films deposited by atomic layer deposition (ALD) on 300 mm Si/SiO 2 substrates to evaluate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJs) for superconducting quantum circuits. Temperature-dependent ellipsometric angles were measured for ALD TaN films with nominal thicknesses of 13 and 25 nm at an incidence angle of 70°, over photon energy ranges of 0.03–0.7 eV (80–300 K) and 0.5–6.5 eV (80–600 K). These data were used to develop a dispersion model for insulating ALD TaN that incorporates a Tauc–Lorentz oscillator with an optical bandgap of 1.5–1.8 eV to describe interband transitions. The extracted dielectric function shows insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. In particular, ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, consistent with the insulating behavior required for a JJ tunnel barrier. Results from transmission electron microscopy (including selected area electron diffraction) and x-ray diffraction are also discussed. Sputter depth-profile x-ray photoelectron spectroscopy shows an N/Ta ratio of ∼1.2 throughout the film. The lower bandgap, low roughness, and thermal stability of ALD TaN compared to AlO x suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, enabling improved thickness and composition control, reduced topography, and resistance to aging.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Superconductor to weak-insulator transitions in disordered tantalum nitride films

Here, we study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic-field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents zν ≈ 1.3, with a corresponding critical field H c << H c2 , the upper critical field. The Hall effect exhibits a crossing point near H c , but with a nonuniversal critical value ρ c xy comparable to the normal-state Hall resistivity. We propose that high-carrier-density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1999

Effects of Hydrogen on Tantalum Nitride Resistors

This document is a presentation about the investigation of drift reported in static frequency output from the analog circuit of a Multichannel Microwave Integrated circuit hybrid microelectronic filter module for space flight application. Electron Dispersion X-Ray Detector )EDAX) Analysis of the 35k ohm thin film Tantalum Nitride Chip resistors identified Palladium in the film. A catalytic reaction of Palladium and hydrogen produces mono atomic hydrogen. When the filter module cavities were filled with a 4 % hydrogen 96 % Nitrogen gas mixture at 25C and monitored the electrical performance for 24 hours. Some channels drifted in a similar pattern as the channel being investigated. Palladium was found on the resistors. The corrective actions taken are reviewed, which resulted in a stable circuit.

Weiler, James↗
DOE OSTI2019

Surface chemistry and photoelectrochemistry—Case study on tantalum nitride

Solar water splitting promises a solution to challenges associated with the intermittent nature of solar energy. Of different implementations, photoelectrochemical water splitting, where one or more photoelectrodes harvest light and catalyze water splitting, represents a convenient platform to understand the governing principles of charge behaviors, especially at the light absorber|H 2 O interface. This Perspective recognizes and discusses the importance of the photoelectrode surface to solar water splitting performance. It presents discussions within the context of a prototypical water splitting material, Ta 3 N 5 , which has gained growing attention lately for its outstanding initial performance. Insights into the mechanisms by which Ta 3 N 5 functions are presented, followed by examples of recent efforts to circumvent the issues that Ta 3 N 5 decays rapidly under solar water splitting conditions. Our visions on the future directions of semiconductor-based solar water splitting will be presented at the end.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications

Ru thin films were deposited by plasma enhanced atomic layer deposition using MethylCyclopentadienylPyrrolylRuthenium (MeCpPy)Ru and N{sub 2}/NH{sub 3} plasma. The growth characteristics have been studied on titanium nitride or tantalum nitride substrates of various thicknesses. On SiO{sub 2}, a large incubation period has been observed, which can be resolved by the use of a metal nitride layer of {approx} 0.8 nm. The growth characteristics of Ru layers deposited on ultra-thin metal nitride layers are similar to those on thick metal nitride substrates despite the fact that the metal nitride layers are not fully closed. Scaled Ru/metal nitride stacks were deposited in narrow lines down to 25 nm width. Thinning of the metal nitride does not impact the conformality of the Ru layer in the narrow lines. For the thinnest lines the Ru deposited on the side wall showed a more granular structure when compared to the bottom of the trench, which is attributed to the plasma directionality during the deposition process.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2009

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Riedell, James A.↗