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Nuclear Data Sheets for A=170☆

Nuclear structure data pertaining to all nuclei with mass number A=170 have been evaluated, and incorporated into the ENSDF data file. This evaluation supersedes the previous evaluation (Coral M. Baglin), Nuclear Data Sheets 96, 611 (2002), (cutoff date 15 August 2002) and subsequent updates of the ENSDF file for Yb to Dy (cutoff 15 April 2010), Lu (cutoff 8 October 1998), Pt (cutoff 17 February 1999) and Ta, Os (cutoff 7 April 1998). Since the previous evaluation, {sup 170}Gd has been observed and the ground state T{sub 1/2} measured. New excited states have also been observed in the neutron rich {sup 170}Dy. The ground state T{sub 1/2} of {sup 170}Tb has been determined, however, there are currently still no excited states observed in this nucleus. There remains some uncertainty in the ground state and longer-lived isomer in {sup 170}Ir which could warrent further experimental investigation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Teverovsky, Alexander A.↗

Infrared optical properties of amorphous and nanocrystalline Ta{sub 2}O{sub 5} thin films

The optical constants of tantalum pentoxide (Ta{sub 2}O{sub 5}) are determined in a broad spectral region from the visible to the far infrared. Ta{sub 2}O{sub 5} films of various thicknesses from approximately 170 to 1600 nm are deposited using reactive magnetron sputtering on Si substrates. X-ray diffraction shows that the as-deposited films are amorphous, and annealing in air at 800 °C results in the formation of nanocrystalline Ta{sub 2}O{sub 5}. Ellipsometry is used to obtain the dispersion in the visible and near-infrared. Two Fourier-transform infrared spectrometers are used to measure the transmittance and reflectance at wavelengths from 1 to 1000 μm. The surface topography and microstructure of the samples are examined using atomic force microscopy, confocal microscopy, and scanning electron microscopy. Classical Lorentz oscillators are employed to model the absorption bands due to phonons and impurities. A simple model is introduced to account for light scattering in the annealed films, which contain micro-cracks. For the unannealed samples, an effective-medium approximation is used to take into account the adsorbed moisture in the film and a Drude free-electron term is also added to model the broad background absorption.

36 MATERIALS SCIENCE↗