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At least 19 records

Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN

A broad range of unusual transport behaviors have been discovered in topological semimetals. However, to date, the effect on the thermopower from intrinsic momentum exchange between electrons and phonons has received little attention. Here we report that huge electron-phonon drag enhancements of the thermopower of the to- pological semimetal, θ-phase tantalum nitride (θ-TaN), can occur that persist even up to room temperature. Our first principles calculations also identify a surprising asymmetry in which the large drag-enhanced thermopowers found slightly above the material’s chemical potential disappear just below it. The large thermopower en- hancements result from anomalous drag contributions from high frequency acoustic phonons with unusually small decay rates. The apparent vanishing drag results from (i) the emergence of an exceptionally high electrical conductivity promoted by the steep linear electronic dispersions extending below one of the topological nodal points; (ii) a remarkable cancellation in which momentum transferred from a charge current creates oppositely directed phonon heat currents of nearly equal magnitude, thereby masking the drag contributions. This extraordinary transport behavior is a consequence of an unusual interplay between intrinsic electron and phonon material properties in θ-TaN. Overall, our work gives new insights into the fundamental physical properties of coupled electron-phonon systems and motivates further exploration of drag effects in semimetals.

36 MATERIALS SCIENCE↗

Basin-Size Mapping: Prediction of Metastable Polymorph Synthesizability Across TaC–TaN Alloys

The sizes of the basins of attraction on the potential energy surface are helpful indicators in determining the experimental synthesizability of metastable phases. In principle, these basins can be controlled with changes in thermodynamic conditions such as composition, pressure, and surface energy. Herein, we use random structure sampling to computationally study how alloying smoothly perturbs basin of attraction sizes. The TaC 1-x N x pseudobinary is an ideal test system given the structural and polymorphic contrast of its parent compounds and their technological relevance as epitaxial substrates for Al 1-x Ga x N. While we find limited thermodynamic stability across all computationally observed phases, random structure sampling shows a significant composition region where the rocksalt basin dominates. As such, we predict the potential for the nonequilibrium synthesis of metastable rocksalt TaC 1-x N x alloys as substrates for Al 1-x Ga x N. At higher nitrogen concentrations, other low-energy metastable polymorphs emerge that continue to retain the hexagonal close packing suitable for III-N growth. Confidence in these trends was established through uncertainty quantification of the basin sizes and energy distributions; such analysis utilized the Beta and Dirichlet distributions. In conclusion, we also find (a) polymorph basin sizes can be rationalized in terms of energetic preferences for different coordination environments; and (b) basin sizes universally shrink with increasing nitrogen content, making the system more prone to amorphous growth.

36 MATERIALS SCIENCE↗

Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.

CMOS↗

Effect of X-ray Irradiation and Carnauba Wax Coating on Quality of Lime (Citrus latifolia Tan.) Fruit

The quality of Persian (Tahiti) lime (Citrus latifoliaTan.) fruit was determined following coating with carnauba wax and X-ray irradiation at doses suitable for disinfestation of quarantine pests. Fruit with or without carnauba wax coating were treated with irradiation doses of 0, 150, 300, or 450 Gy, and stored for 14 days at 13 °C and 6 days at 20 °C to simulate commercial transportation and marketing conditions from Hawaii to the continental United States. The fruit color, weight loss, total soluble solids (TSS) content, and titratable acidity (TA) were analyzed at 7, 14, and 14 + 6 days post irradiation. Wax coating significantly delayed fruit peel discoloration, and reduced fruit weight loss by more than 7% compared with the unwaxed controls. Irradiation did not affectΔEof the peel for coated fruit at day 14 + 6. Irradiation with or without coating did not affectΔEof flesh color, weight loss, TSS content, or TA. Wax coating combined with irradiation treatment of limes at doses ≤450 Gy ensured marketable visual quality and chemical composition while providing quarantine security.

Agriculture↗

Electrode chemistry impact on retention performance of ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x ) capacitors

Polarization retention of 10 nm thick ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x , HZO) capacitors with W and TaN electrodes is investigated over temperatures ranging from 85 to 150 °C. Same state and opposite state polarization margins for devices with W electrodes show minimal retention loss after 10 5 at 150 °C. The devices capped with TaN electrodes show excellent same state retention, but the opposite state polarization margin in the TaN-electrode devices displays 40% retention loss at 150 °C after 10 5 s. The TaN-capped devices exhibit a more pronounced imprint, which is attributed to an increased oxygen vacancy content (compared to W-capped devices). The increased oxygen vacancy content in the TaN-capped devices is supported by photoluminescence and leakage current measurements. In addition, TaN-capped devices have chemically diffuse electrode–HZO interfaces; more abrupt interfaces are present in the W-capped devices. The presence of interfacial phases in the TaN-capped devices may lead to larger depolarization fields due to reduced charge screening. The results from this study provide further evidence that for HZO ferroelectric devices the electrode can significantly impact polarization retention behavior due to differences in oxygen vacancy concentration and formation of non-ferroelectric interfacial layers.

36 MATERIALS SCIENCE↗

Temperature-dependent dielectric function of tantalum nitride formed by atomic layer deposition for tunnel barriers in Josephson junctions

Here, we report the dielectric functions of insulating tantalum nitride (TaN) films deposited by atomic layer deposition (ALD) on 300 mm Si/SiO 2 substrates to evaluate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJs) for superconducting quantum circuits. Temperature-dependent ellipsometric angles were measured for ALD TaN films with nominal thicknesses of 13 and 25 nm at an incidence angle of 70°, over photon energy ranges of 0.03–0.7 eV (80–300 K) and 0.5–6.5 eV (80–600 K). These data were used to develop a dispersion model for insulating ALD TaN that incorporates a Tauc–Lorentz oscillator with an optical bandgap of 1.5–1.8 eV to describe interband transitions. The extracted dielectric function shows insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. In particular, ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, consistent with the insulating behavior required for a JJ tunnel barrier. Results from transmission electron microscopy (including selected area electron diffraction) and x-ray diffraction are also discussed. Sputter depth-profile x-ray photoelectron spectroscopy shows an N/Ta ratio of ∼1.2 throughout the film. The lower bandgap, low roughness, and thermal stability of ALD TaN compared to AlO x suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, enabling improved thickness and composition control, reduced topography, and resistance to aging.

36 MATERIALS SCIENCE↗

New Constraints on the Dark Matter Density Profiles of Dwarf Galaxies from Proper Motions of Globular Cluster Streams

The central density profiles in dwarf galaxy halos depend strongly on the nature of dark matter (DM). Recently, in Malhan et al. we employed N-body simulations to show that the cuspy cold DM subhalos predicted by cosmological simulations can be differentiated from cored subhalos using the properties of accreted globular cluster (GC) streams since these GCs experience tidal stripping within their parent halos prior to accretion onto the Milky Way. We previously found that clusters that are accreted within cuspy subhalos produce streams with larger physical widths and higher dispersions in line-of-sight velocity and angular momentum than streams that are accreted within cored subhalos. Here, we use the same suite of simulations to demonstrate that the dispersion in the tangential velocities of streams (${\sigma }_{{v}_{\mathrm{Tan}}}$) is also sensitive to the central DM density profiles of their parent dwarfs and GCs that they were accreted from; cuspy subhalos produce streams with larger ${\sigma }_{{v}_{\mathrm{Tan}}}$ than those accreted inside cored subhalos. Using Gaia EDR3 observations of multiple GC streams we compare their ${\sigma }_{{v}_{\mathrm{Tan}}}$ values with simulations. The measured ${\sigma }_{{v}_{\mathrm{Tan}}}$ values are consistent with both an “in situ” origin and with accretion inside cored subhalos of M ~ 10 8–9 M ⊙ (or very low-mass cuspy subhalos of mass ~10 8 M ⊙ ). Despite the large current uncertainties in ${\sigma }_{{v}_{\mathrm{Tan}}}$, we find a low probability that any of the progenitor GCs were accreted from cuspy subhalos of M ≳ 10 9 M ⊙ . The uncertainties on Gaia tangential velocity measurements are expected to decrease in future and will allow for stronger constraints on subhalo DM density profiles.

79 ASTRONOMY AND ASTROPHYSICS↗

New Constraints on the Dark Matter Density Profiles of Dwarf Galaxies from Proper Motions of Globular Cluster Streams

The central density profiles in dwarf galaxy halos depend strongly on the nature of dark matter (DM). Recently, in Malhan et al. we employed N-body simulations to show that the cuspy cold DM subhalos predicted by cosmological simulations can be differentiated from cored subhalos using the properties of accreted globular cluster (GC) streams since these GCs experience tidal stripping within their parent halos prior to accretion onto the Milky Way. We previously found that clusters that are accreted within cuspy subhalos produce streams with larger physical widths and higher dispersions in line-of-sight velocity and angular momentum than streams that are accreted within cored subhalos. Here, we use the same suite of simulations to demonstrate that the dispersion in the tangential velocities of streams (σ 𝜈 Tan) is also sensitive to the central DM density profiles of their parent dwarfs and GCs that they were accreted from; cuspy subhalos produce streams with larger σ 𝜈 Tan than those accreted inside cored subhalos. Using Gaia EDR3 observations of multiple GC streams we compare their (σ 𝜈 Tan) values with simulations. The measured (σ 𝜈 Tan) values are consistent with both an “in situ” origin and with accretion inside cored subhalos of M ∼ 10(8–9) Me (or very low-mass cuspy subhalos of mass ∼10(8) Mꙩ ). Despite the large current uncertainties in σ 𝜈 Tan, we find a low probability that any of the progenitor GCs were accreted from cuspy subhalos of M ≳ 10 (9) Mꙩ. The uncertainties on Gaia tangential velocity measurements are expected to decrease in future and will allow for stronger constraints on subhalo DM density profiles.

Khyati Malhan↗

Transferable Adversarial Attack on 3D Object Tracking in Point Cloud

3D point cloud object tracking has recently witnessed considerable progress relying on deep learning. Such progress, however, mainly focuses on improving tracking accuracy. The risk, especially considering that deep neural network is vulnerable to adversarial perturbations, of a tracker being attacked is often neglected and rarely explored. In order to attract attentions to this potential risk and facilitate the study of robustness in point cloud tracking, we introduce a novel transferable attack network (TAN) to deceive 3D point cloud tracking. Specifically, TAN consists of a 3D adversarial generator, which is trained with a carefully designed multi-fold drift (MFD) loss. The MFD loss considers three common grounds, including classification, intermediate feature and angle drifts, across different 3D point cloud tracking frameworks for perturbation generation, leading to high transferability of TAN for attack. In our extensive experiments, we demonstrate the proposed TAN is able to not only drastically degrade the victim 3D point cloud tracker, \ie, P2B, but also effectively deceive other unseen state-of-the-art approaches such as BAT and M^2Track, posing a new threat to 3D point cloud tracking.

97 MATHEMATICS AND COMPUTING↗

Viscoelastic-Mapping of Cellulose Nanofibrils Using Low-Total-Force Contact Resonance Force Microscopy (LTF-CRFM)

Low-total-force contact resonance force microscopy (LTF-CRFM), an atomic force microscopy method, is introduced as a non-destructive means to quantify the local viscoelastic loss tangent (tan..delta..) of supported cellulose nanofibrils (CNFs). The method limits static and dynamic forces during measurement to minimize substrate and geometry effects and to reduce the potential for stress-induced CNF damage. LTF-CRFM uses Brownian motion to achieve the thermally-limited lowest dynamic force, while approaching adhesive pull-off to achieve the low static force. LTF-CRFM measurements were shown to generate analyzable data without evidence of nonlinear artifacts and without damage to the CNF over static forces ranging from 11.6 to 84.6 nN. The measured tan..delta.. of CNFs was 0.015 +/- 0.0094, which is the first reported tan..delta.. measurement of an isolated CNF. Finally, LTF-CRFM successfully mapped tan..delta.. along the length of CNFs to determine that kink defects along the CNF do not impart a local viscoelastic property change at the spatial resolution of the measurement.

BIOMASS FUELS↗

Muon $$\mathbf {g-2}$$, neutralino dark matter and stau NLSP

Abstract We explore the implications of resolving the muon $$g-2$$ g - 2 anomaly in a $$SU(4)_c \times SU(2)_L \times SU(2)_R$$ S U ( 4 ) c × S U ( 2 ) L × S U ( 2 ) R model, where the soft supersymmetry breaking scalar and gaugino masses break the left-right (LR) symmetry. A 2 $$\sigma $$ σ resolution of the anomaly requires relatively light sleptons, chargino and LSP neutralino. The stau turns out to be the NLSP of mass $$m_{\tilde{\tau }}\lesssim 400$$ m τ ~ ≲ 400 GeV, and the sleptons from the first two families can be as heavy as about 800 GeV. The chargino is also required to be lighter than about 600 GeV to accommodate the muon $$g-2$$ g - 2 solutions consistent with the dark matter relic density constraint. The dominant right-handed nature of the light slepton states suppress the sensitivity of possible signals which can be probed in Run3 experiments at the LHC. We also discuss the impact of accommodating the Higgs boson mass and the vacuum stability of the scalar potential for these solutions. Although a light stau can be compatible with the stability of the scalar potential, the Higgs boson mass constraint has a strong impact on the solutions with $$\tan \beta $$ tan β bounded from above, namely $$\tan \beta \lesssim 20$$ tan β ≲ 20 . The Higgsinos are heavier than about 4 TeV, and the LSP neutralino has the correct relic density if it is Bino-like. We identify stau–neutralino coannihilation as the dominant mechanism for realizing the desired dark matter relic density, with sneutrino–neutralino coannihiliation playing a minor role. These bino-like dark matter solutions can yield a spin-independent scattering cross-section on the order of $$10^{-13}$$ 10 - 13 pb which hopefully, can be expected to be tested in the near future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Mars: Correcting surface albedo observations for effects of atmospheric dust loading

We have developed a radiative transfer model which allows the effects of atmospheric dust loading on surface albedo to be investigated. This model incorporates atmospheric dust opacity, the single scattering albedo and particle phase function of atmospheric dust, the bidirectional reflectance of the surface, and variable lighting and viewing geometry. The most recent dust particle properties are utilized. The spatial and temporal variability of atmospheric opacity (Tan) strongly influences the radiative transfer modelling results. We are currently using the approach described to determine Tan for IRTM mapping sequences of selected regions. This approach allows Tan to be determined at the highest spatial and temporal resolution supported by the IRTM data. Applying the radiative transfer modelling and determination of Tan described, IRTM visual brightness observations can be corrected for the effects of atmospheric dust loading a variety of locations and times. This approach allows maps of 'dust-corrected surface albedo' to be constructed for selected regions. Information on the variability of surface albedo and the amount of dust deposition/erosion related to such variability results. To date, this study indicates that atmospheric dust loading has a significant effect on observations of surface albedo, amounting to albedo corrections of as much as several tens of percent. This correction is not constant or linear, but depends upon surface albedo, viewing and lighting geometry, the dust and surface phase functions, and the atmospheric opacity. It is clear that the quantitative study of surface albedo, especially where small variations in observed albedo are important (such as photometric analyses), needs to account for the effects of the atmospheric dust loading. Maps of 'dust-corrected surface albedo' will be presented for a number of regions.

Lee, S. W.↗

Characterization of Hybrid Ferroelectric/HTS Thin Films for Tunable Microwave Components

Since the discovery of High-Temperature-Superconductors (HTS) in 1986, a diversity of HTS-based microwave components has been demonstrated. Because of their low conductor losses, HTS-based components are very attractive for integration into microwave circuits for space communication systems. Recent advancements have made deposition of ferroelectric thin films onto HTS thin films possible. Due to the sensitivity of the ferroelectric's dielectric constant (epsilon(sub r)) to an externally applied electric field (E), ferroelectric/superconducting structures could be used in the fabrication of low loss, tunable microwave components. In this paper, we report on our study of Ba(0.5)Sr(0.5)TiO3/YBa2Cu3O(7-delta) and Ba(0.08)Sr(0.92)TiO3/YBa2Cu3O(7-delta) ferroelectric/superconducting thin films on lanthanum aluminate (LaAlO3) substrates. For the (Ba:Sr, 0.50:0.50) epitaxial sample, a epsilon(sub r) of 425 and a loss tangent (tan delta) of 0.040 were measured at 298 K, 1.0 MHz, and zero applied E. For the same sample, a epsilon(sub r) of 360 and tan delta of 0.036 were obtained at 77 K, 1.0 MHz, and zero applied E. Variations in epsilon(sub r) from 180 to 360 were observed over an applied E range of 0V/cm less than or equal to E less than or equal to 5.62 x 10(exp 4) V/cm with little change in tan delta. However, the range of epsilon(sub r) variation for the polycrystalline (Ba:Sr, 0.08:0.92) sample over 0V/cm less than or equal to E less than or equal to 4.00 x 10(exp 4) V/cm was only 3.6 percent while tan delta increased markedly. These results indicate that a lack of epitaxy between the ferroelectric and superconducting layers decreases tuning and increases microwave losses.

Winters, M. D.↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗

Model of Jovian F region ionosphere (Jovian ionosphere model in offset dipole approximation)

The geomagnetic control of the Earth's atmosphere is well understood. In the F-region and the topside ionosphere, non-electrical forces transport plasma along the magnetic field lines only. In consequence, the worldwide distribution of ionization is strongly dependent on the dip angle. For example, the equatorial anomaly is roughly symmetrical about the dipole equator rather than the geographic. The same appears to be the case in the Jovian ionosphere (Mahajan, 1981). The influence of the magnetic field of Jupiter on its ionization pattern is one of several outstanding topics which need to be studied. Tan (1986) investigated the formation of the equatorial anomaly in the Jovian ionosphere under a centered dipole model. Tan (1988) further studied the effect of the tilt of the Jovian dipole. The results were in broad agreement with those of a diffusive equilibrium model (Tan and Wu, 1981). An off-centered dipole model is constructed and its effects on the ionization pattern are investigated.

Tan, A.↗