On the radiation emitted from a superconducting tunnel junction
Superconducting tunnel junctions radiation emission, discussing superconductivity theory
Lee, P. A.↗
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A multilayered approach to superconducting tunnel junction x ray detectors
'First generation' superconducting tunnel junction X-ray detectors (characterized by a single tunnel junction in direct contact with its substrate, with totally external amplification) remain more than an order of magnitude away from their theoretical energy resolutions which are in the order of eV's. The difficulties that first generation devices are encountering are being attacked by a 'second generation' of superconducting X-ray detector designs including quasiparticle trapping configurations and Josephson junction arrays. A second generation design concept, the multilayered superconducting tunnel junction X-ray detector, consisting of tens to hundreds of tunnel junctions stacked on top of one another (a superlattice), is presented. Some of the possibilities of this engineered materials approach include the tuning of phonon transmission characteristics of the material, suppression of parasitic quasiparticle trapping and intrinsic amplification.
Rippert, E. D.↗
Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
Hunt, Brian D.↗
Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation
Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.
Stevenson, T. R.↗
Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors
For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.
Stevenson, T. R.↗
Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors
The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.
Stevenson, T. R.↗
The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap
An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.
Rippert, Edward D.↗
Low-noise 115-GHz receiver using superconducting tunnel junctions
A 110-118-GHz receiver based on a superconducting quasiparticle tunnel junction mixer is described. The single-sideband noise temperature is as low as 68 + or - 3 K. This is nearly twice the sensitivity of any other receiver at this frequency. The receiver was designed using a low-frequency scale model in conjunction with the quantum mixer theory. A scaled version of the receiver for operation at 46 GHz has a single-sideband noise temperature of 55 K. The factors leading to the success of this design are discussed.
Pan, S.-K.↗
Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 to 500 C for improved quality of the electrode.
Hunt, Brian D.↗
Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
Hunt, Brian D.↗
Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz
Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.
Mcgrath, W. R.↗
Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz
Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.
Mcgrath, W. R.↗
A superconducting tunnel junction receiver for millimeter-wave astronomy
The development and construction of an ultralow noise heterodyne receiver for millimeter wave astronomy is described along with its use for 115.3 GHz Co line observations. The receiver uses a Superconductor-Insulator-Superconductor (SIS) quasiparticle tunnel junction mixer to convert the millimeter wave signal to a microwave intermediate frequency. Experiments aimed at quantitative verification of J. R. Tucker's quantum mixer theory are studied, to see whether it could be used as the basis for the design of a practical receiver. The experimental results were in excellent agreement with the theory, assuming the three frequency approximation. Infinite available gain and negative output resistance were observed for the first time, nonclassical effects which are not seen in conventional diode mixers. Using Tucker's theory, an SIS receiver was then designed and constructed. At 115 GHz, the single sideband receiver noise temperature is 83K, the lowest ever reported in this frequency range. A CO survey toward Cygnus-X region, using this SIS receiver on the Columbia-GISS 4 ft. telescope, is also described.
Pan, S. K.↗
A superconducting tunnel junction receiver for 345 GHz
The design, fabrication, and testing of a quasi-particle tunnel junction receiver for use at 345 GHz are discussed. The design employs small area Nb/Nb-oxide/PbInAu edge junctions in order to keep the device capacitance small and maintain a modest value for omega R(N)C. For optimum noise performance and beam properties the mixer is contained in a waveguide mounting structure. The best sensitivity was obtained at 312 GHz where a double sideband (DSB) noise temperature of 275 K was measured. Noise temperatures of 400 K (DSB) or better were obtained out to 350 GHz.
Sutton, E. C.↗
Submillimeter wave detection with superconducting tunnel diodes
Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.
Wengler, Michael J.↗
A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions
A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
DeLange, Gert↗
A Low-noise Micromachined Millimeter-Wave Heterodyne Mixer using Nb Superconducting Tunnel Junctions
A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
DeLange, Gert↗
Low-Noise Submillimeter-Wave NbTiN Superconducting Tunnel Junction Mixers
We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.
Kawamura, J.↗