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Results for “Solid State Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

All sources NASA NTRS DOE OSTI

DOE OSTI2014

Low latency and persistent data storage

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2014

Low latency and persistent data storage

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Silicon compatible Sn-based resistive switching memory

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO 2 or Al 2 O 3 )/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO 2 , we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V stress ) as well as the initial leakage current (I 0 ) through the device.

42 ENGINEERING↗

DOE OSTI2019

Stable Metallic Enrichment in Conductive Filaments in TaO x –Based Resistive Switches Arising from Competing Diffusive Fluxes

Oxide–based resistive–switching devices hold promise for solid–state memory technology. Information encoding is accomplished by electrically switching the device between two nonvolatile states with low and high resistance states (LRS/HRS). It is generally accepted that the change between these states is due to the motion of oxygen vacancies forming a continuous (LRS) or gapped (HRS) filament between the electrodes. Direct assessments of filaments are rare due to their small size and the difficulty of locating the filament. Electron microscopy experiments reveal the filament structure and chemistry in TaO 2.0 ± 0.2 –based 150 × 150 nm 2 devices with cross–sectional geometry after forming with power dissipation lower than 1 mW. The filaments appear to be roughly hourglass–shaped with a diameter of less than 10 nm and are composed of Ta–rich and O–poor mostly amorphous material with local compositions as Ta–rich as TaO 0.4 . The as–formed HRS has a gap up to 10 nm wide located next to the anode and composed of nearly stoichiometric TaO 2.5 . The tantalum and oxygen distribution is consistent with filaments formed by the motion of both Ta and O driven by temperature gradients (Soret effect) and an electric field. As a result, this interpretation points towards a new compact model of resistive–switching devices.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Crystallization kinetics of the phase change material GeSb 6 Te measured with dynamic transmission electron microscopy

GeSb 6 Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6 Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.

36 MATERIALS SCIENCE↗

DOE OSTI2016

ASA-FTL: An adaptive separation aware flash translation layer for solid state drives

Here, the flash-memory based Solid State Drive (SSD) presents a promising storage solution for increasingly critical data-intensive applications due to its low latency (high throughput), high bandwidth, and low power consumption. Within an SSD, its Flash Translation Layer (FTL) is responsible for exposing the SSD’s flash memory storage to the computer system as a simple block device. The FTL design is one of the dominant factors determining an SSD’s lifespan and performance. To reduce the garbage collection overhead and deliver better performance, we propose a new, low-cost, adaptive separation-aware flash translation layer (ASA-FTL) that combines sampling, data clustering and selective caching of recency information to accurately identify and separate hot/cold data while incurring minimal overhead. We use sampling for light-weight identification of separation criteria, and our dedicated selective caching mechanism is designed to save the limited RAM resource in contemporary SSDs. Using simulations of ASA-FTL with both real-world and synthetic workloads, we have shown that our proposed approach reduces the garbage collection overhead by up to 28% and the overall response time by 15% compared to one of the most advanced existing FTLs. We find that the data clustering using a small sample size provides significant performance benefit while only incurring a very small computation and memory cost. In addition, our evaluation shows that ASA-FTL is able to adapt to the changes in the access pattern of workloads, which is a major advantage comparing to existing fixed data separation methods.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2021

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Algorithmic optimization of quantum optical storage in solids

Quantum memory devices with high storage efficiency and bandwidth are essential elements for future quantum networks. Solid-state quantum memories can provide broadband storage, but they primarily suffer from low storage efficiency. We use passive optimization and algorithmic optimization techniques to demonstrate nearly a sixfold enhancement in quantum memory efficiency. In this regime, we demonstrate coherent and single-photon-level storage with a high signal-to-noise ratio. The optimization technique presented here can be applied to most solid-state quantum memories to significantly improve the storage efficiency without compromising the memory bandwidth. Published by the American Physical Society 2024

Lei, Yisheng↗

DOE OSTI2019

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe 2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe 2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ~1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ~2.5 × 10 12 cm –2 , and an On/Off ratio exceeding 10 4 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). Furthermore, when the write time approaches 1 ms, the On/Off ratio remains >10 2 , showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

2D crystal↗

DOE OSTI2025

Scalable low-loss cryogenic packaging of quantum memories in CMOS-foundry processed photonic chips

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with <3 dB losses achievable from fiber to quantum memory for the TE 0 mode at a wavelength of 737 nm.

Bernson, Robert [Tyndall National Institute, Cork ↗

DOE OSTI2025

Spin-optomechanical cavity interfaces by deep subwavelength phonon-photon confinement

A central goal of quantum information science is transferring qubits between space, time, and modality. Spin-based systems in solids are promising quantum memories, but high-fidelity transfer of their quantum states to telecom optical fields remains challenging. Here, we introduce a phonon-mediated interface between spins in a diamond nanobeam optomechanical crystal and telecom optical fields by a simultaneous deep-subwavelength confinement of optical and acoustic fields with mode volumes $V_{\textrm{mech}}$$/Λ^3_\textrm{p} ~ 10^{-5}$ and $V_{\textrm{opt}}$$/λ^3 ~ 10^{−3}$, respectively. This confinement boosts the spin-mechanical coupling rate of Group-IV silicon vacancy (SiV − ) centers by an order of magnitude to ~ 32 MHz while retaining high acousto-optical couplings. The optical cavity couples to the spin irrespective of the emitter’s native excited states, avoiding spectral diffusion. Using Quantum Monte Carlo simulations, we estimate heralded entanglement fidelities exceeding 0.96 between two such interfaces. We anticipate broad utility beyond diamond emitter-telecom systems to most solid-state quantum memories.

Raniwala, Hamza [Massachusetts Inst. of Technology↗

DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗

DOE OSTI2025

HDF5 in the exascale era: Delivering efficient and scalable parallel I/O for exascale applications

Accurately modeling real-world systems requires scientific applications at exascale to generate massive amounts of data and manage data storage efficiently. However, parallel input and output (I/O) faces challenges due to new application workflows and the state-of-the-art memory, interconnect, and storage architectures considered in exascale designs. The storage hierarchy has expanded with node-local persistent memory, solid-state storage, and traditional disk and tape-based storage, thus requiring efficiency at each layer and much more efficient data movement among these layers. This paper discusses how the ExaHDF5 project improved the I/O performance and data management for exascale architectures by enhancing HDF5, a widely used parallel I/O library. The team developed an Asynchronous I/O Virtual Object Layer (VOL) connector that allowed overlapping I/O with computation. They also created a Cache VOL to complement asynchronous I/O by incorporating fast storage layers, such as burst buffer and node-local storage, into the parallel I/O workflow through caching and staging data. Additionally, the team enabled data aggregation and I/O at the node level by using a Subfiling Virtual File Driver (VFD). To demonstrate superior I/O performance with HDF5 at exascale, the ExaHDF5 team collaborated with several exascale applications. In this paper, we show I/O performance improvements for three applications: Cabana (a particle-based simulation library), EQSIM (a regional earthquake simulation software), and E3SM (a climate system modeling library).

Asynchronous I/Ol↗

DOE OSTI2024

Telecom Networking with a Diamond Quantum Memory

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy ( Si V ) center in diamond to the telecom O band, maintaining low noise ( g 2 ( 0 ) < 0.1 ) and high indistinguishability ( V = 89 ± 8 % ). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50-km deployed fiber link, to the visible band and entangling them with a diamond quantum memory with fidelity F ≥ 87 ± 2.5 % . These results demonstrate the viability of Si V quantum memories integrated with telecom-band systems for scalable quantum networking applications. Published by the American Physical Society 2024

Physics↗

DOE OSTI2026

Thin-film lithium niobate on diamond as a platform for efficient spin-phonon coupling

Negatively charged silicon vacancy (SiV − ) centers in diamond are leading candidates for solid-state quantum memory that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to the strong strain response of SiV − , enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAWs) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires an interface with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate with diamond to enable acoustic control of single SiV − spins. Additionally, leveraging large SAW-induced strain at the location of SiV − , we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to state-of-the-art devices based on aluminum nitride on diamond. Furthermore, this work represents a crucial step towards realizing phonon-based quantum information processing systems.

Optically detected magnetic resonance↗

DOE OSTI2016

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2017

Systems and methods for rapid processing and storage of data

Systems and methods of building massively parallel computing systems using low power computing complexes in accordance with embodiments of the invention are disclosed. A massively parallel computing system in accordance with one embodiment of the invention includes at least one Solid State Blade configured to communicate via a high performance network fabric. In addition, each Solid State Blade includes a processor configured to communicate with a plurality of low power computing complexes interconnected by a router, and each low power computing complex includes at least one general processing core, an accelerator, an I/O interface, and cache memory and is configured to communicate with non-volatile solid state memory.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2019

Systems and methods for rapid processing and storage of data

Stalzer, Mark A.↗