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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Martian environmental effects on solar cells and solar cell cover glasses

The results of a study concerned with the effects of the Martian environment on the performance of solar cells are given. The results indicate that the efficiency of a power system composed of solar cells will be greatly reduced when subjected to dust storms such as may occur on Mars. Two factors are responsible for this, (1) accumulation of dust on the protective covers, and (2) damage to covers by pitting, cracking, and chipping. It is recommended that this type of power system not be used on Mars landing vehicles. Experimental procedures are described and results are summarized and damage assessed.

Wade, F. A.↗
NASA NTRS1981

SLAM examination of solar cells and solar cell welds

The scanning laser acoustic microscope (SLAM) has been evaluated for non-destructive examination of solar cells and interconnector bonds. Using this technique, it is possible to view through materials in order to reveal regions of discontinuity such as microcracks and voids. Of particular interest is the ability to evaluate, in a unique manner, the bonds produced by parallel gap welding. It is possible to not only determine the area and geometry of the bond between the tab and cell, but also to reveal any microcracks incurred during the welding. By correlating the SLAM results with conventional techniques of weld evaluation a more confident weld parameter optimization can be obtained.

Stella, P. M.↗
NASA NTRS1991

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗
NASA NTRS1990

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗
NASA NTRS1985

Monolithic cascade-type solar cells

Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

Yamamoto, S.↗
NASA NTRS1979

Electron Radiation Damage of (alga) As-gaas Solar Cells

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

Loo, R.↗
NASA NTRS1993

New experimental techniques for solar cells

Solar cell capacitance has special importance for an array controlled by shunting. Experimental measurements of solar cell capacitance in the past have shown disagreements of orders of magnitude. Correct measurement technique depends on maintaining the excitation voltage less than the thermal voltage. Two different experimental methods are shown to match theory well, and two effective capacitances are defined for quantifying the effect of the solar cell capacitance on the shunting system.

Lenk, R.↗
NASA NTRS1981

Passivation layer for steel substrate of solar cell

Solar cell is fabricated on commerical sheet-steel substrate passivated with tungsten layer. Layer prevents constituents of steel from interacting with semiconductor materials in MOS thin-film solar cell. Thin plating of nickel on steel improves bonding of tungsten. Use of steel as substrate reduces materials cost of solar cell construction.

Stirn, R. J.↗
NASA NTRS1994

Hypervelocity Impact Testing of Space Station Freedom Solar Cells

Solar array coupons designed for the Space Station Freedom electrical power system were subjected to hypervelocity impacts using the HYPER facility in the Space Power Institute at Auburn University and the Meteoroid/Orbital Debris Simulation Facility in the Materials and Processes Laboratory at the NASA Marshall Space Flight Center. At Auburn, the solar cells and array blanket materials received several hundred impacts from particles in the micron to 100 micron range with velocities typically ranging from 4.5 to 10.5 km/s. This fluence of particles greatly exceeds what the actual components will experience in low earth orbit. These impacts damaged less than one percent of total area of the solar cells and most of the damage was limited to the cover glass. There was no measurable loss of electrical performance. Impacts on the array blanket materials produced even less damage and the blanket materials proved to be an effective shield for the back surface of the solar cells. Using the light gas gun at MSFC, one cell of a four cell coupon was impacted by a 1/4 inch spherical aluminum projectile with a velocity of about 7 km/s. The impact created a neat hole about 3/8 inch in diameter. The cell and coupon were still functional after impact.

Christie, Robert J.↗
NASA NTRS1987

A verified technique for calibrating space solar cells

Solar cells have been flown on high-altitude balloons for over 24 years, to produce solar cell standards that can be used to set the intensity of solar simulators. The events of a typical balloon calibration flight are reported. These are: the preflight events, including the preflight cell measurements and the assembly of the flight cells onto the solar tracker; the activities at the National Scientific Balloon Facility in Palestine, Texas, including the preflight calibrations, the mating of the tracker and cells onto the balloon, preparations for launch, and the launch; the payload recovery, which includes tracking the balloon by aircraft, terminating the flight, and retrieving the payload. In 1985, the cells flow on the balloon were also flown on a shuttle flight and measured independently. The two measurement methods are compared and shown to agree within 1 percent.

Anspaugh, Bruce↗
NASA NTRS1978

Solar cells for solar power satellites

The concept of a solar-cell array for a solar power satellite is developed to permit evaluation of its economic feasibility for generating power for delivery to public utilities on earth. Gallium arsenide solar cells were considered but it could not be assured that the world gallium resources could support constructions of two solar power satellites per year. Therefore, for preliminary design an array blanket made from 5 by 10 cm silicon solar cells, 50 microns thick, and electrostatically bonded between borosilicate glass sheets was adopted. In annealing experiments, a radiated 50 microns thick cell was restored to its initial performance in a 500 C. Solar-cell efficiency effects significantly the solar power satellite mass, which varies from 90,000 metric tons for 20 percent cells to 120,000 metric tons for 12 percent cells. The anticipated cost of delivered power, based on 1977 dollars, varies from 4 cents per kWh with 18 percent cells, to 5 cents per kWh for 12 percent efficient cells.

Oman, H.↗
NASA NTRS1972

Development of GaAs solar cells

Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts.

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