ARCS White Beam Vanadium Normalization Data for SNS Cycle 2023B
A data set used to normalize the detector response of the ARCS instrument see ARCS_256693.md in the data set for more details.
Abernathy, Douglas L [ORNL] (ORCID:000000023533003↗
SEARCH · Engineering Papers
Results for “SnS”
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ARCS White Beam Vanadium Normalization Data for SNS Cycle 2015B
A data set used to normalize the detector response of the ARCS instrument see ARCS_58221.md in the data set for more details.
36 MATERIALS SCIENCE↗
ARCS White Beam Vanadium Normalization Data for SNS Cycle 2025A
A data set used to normalize the detector response of the ARCS instrument. See ARCS_295641.md in the data set for more details.
36 MATERIALS SCIENCE↗
ARCS White Beam Vanadium Normalization Data for SNS Cycle 2026A
A data set used to normalize the detector response of the ARCS instrument. See ARCS_336659.md in the data set for more details.
36 MATERIALS SCIENCE↗
Surface Passivation by Excess Sulfur for Controlled Synthesis of Large, Thin SnS Flakes
Tin sulfide (SnS) is part of the group IV chalcogenides (SnX, GeX; X: S, Se), a family of anisotropic layered materials considered for thin film photovoltaics, optoelectronics, and valleytronics, and predicted narrow bandgap multiferroic materials. Large ultrathin SnS flakes, suitable for a variety of applications, are challenging to synthesize because of the enhanced surface reactivity due to the open layer structure of SnS which gives rise to a competition between lateral and vertical growth. Here we investigate the effects of added sulfur on passivating the surface and modifying the balance between lateral expansion and thickening of SnS flakes in chemical vapor transport from a SnS precursor. In addition, we investigate the growth of SnS flakes and compare the results of synthesis from a pure SnS precursor with growth, in which a slight excess of sulfur is supplied in different ways. Our results demonstrate that small amounts of excess sulfur can profoundly affect the size and thickness distributions of SnS flakes. The largest and thinnest flakes are obtained if (i) traces of sulfur are added and (ii) the sulfur source consists either of small Sx fragments released at high temperatures from the reactor walls, or atomic S supplied by sublimation from SnS 2 . The likely mechanism for the observed growth modifications is a transient surface passivation of SnS flakes during growth, which reduces the reactivity of the top facet of the flakes, limits vertical growth, and thus gives rise to ensembles with increased lateral size and reduced thickness.
36 MATERIALS SCIENCE↗
Understanding Photovoltage Deficits in Electrochemically Grown Tin Sulfide (SnS) Thin-Film Photovoltaic Devices
Tin(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.
deposition↗
Dimensional Reduction Guides Electronic Structure Evolution in the A n Cu 4–n SnS 4 Semiconductor Series
The search for new functional materials with tunable properties remains a central challenge in chemistry, particularly for applications in energy and electronics. In this work, we present a framework for predictive crystal design in alkali metal chalcogenides that enables controlled dimensional reduction of a parent covalent motif, yielding a broad range of electronic structures, which systematically evolve from one parent to the other. We present 11 new members of the A n Cu 4–n SnS 4 family (A = alkali metal; n = 0–4), which reduce the three-dimensional (3D) covalent network of Cu 4 SnS 4 into various 3D, 2D, 1D, and 0D [Cu 4–n SnS 4 ] n− motifs through the substitution of Cu with alkali metals of various radii. The end members of the family set the range in achievable band gaps at 0.99 eV for fully covalent Cu 4 SnS 4 (n = 0) and 3.38 eV for K 4 SnS 4 (n = 4) with 0D [SnS 4 ] n− tetrahedra. As the dimensionality of [Cu 4–n SnS 4 ] n− systematically reduces within A n Cu 4–n SnS 4 (n = 1–3), a stepwise increase in band gap energy occurs through a gradual decrease in the energy of the valence band maximum and an increase in the conduction band minimum, with an increase in the effective masses of charge carriers. Furthermore, irrespective of the alkali metal, the thermal stability decreases with decreasing [Cu 4–n SnS 4 ] n− dimensionality within the quaternary members. Most importantly, we demonstrate that predictable crystal structure and property evolution for a given composition space is possible by deriving a general formula based on substituting the covalent metals of a parent structure with alkali metals.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets
Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.
Najaf, Zainab [University of California, Davis, CA↗
Study of the crystal structure of SnS thin films by atomic layer deposition
Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin films is not well understood. In order to study the phases and crystallographic orientations of SnS films, films with thicknesses of 90 nm–750nm were prepared by atomic layer deposition (ALD) at temperatures between 80 °C and 200 °C on amorphous silicon dioxide (a-SiO2) and single-crystal sodium chloride (NaCl). We show that the crystal structures and orientations of the ALD-SnS thin films vary with deposition temperature, film thickness, and substrate. We confirm the presence of metastable cubic π-SnS in co-existence with the thermodynamically stable orthorhombic α-SnS and find that the π phase is more prevalent at lower deposition temperatures. The films grown on a-SiO2 are textured, the degree of texturing increases with lower temperature or higher thickness, and the deposited phase is also thickness dependent. Upon annealing, which is known to promote SnS grain growth, all films revert to orthorhombic α-SnS. The films grown on the NaCl(100) substrate exhibit a much higher degree of texturing and show different preferred orientations dependent on the phase: π-(400) and α-(111) or α-(040). In addition, we demonstrate a proof-of-concept device made from the highly oriented SnS grown on NaCl.
36 MATERIALS SCIENCE↗
van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here, in this study, we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS($100$) and hBN{$1\bar{10}$} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
C@SnS 2 core-shell 0D/2D nanocomposite with excellent electrochemical performance as lithium-ion battery anode
C@SnS 2 core-shell 0D/2D nanocomposite was successfully prepared by a one-step hydrothermal method. The SnS 2 nanosheets were heterogeneously nucleated and grown on the surface of carbon spheres. As an anode for lithium-ion batteries, the electrochemical performance of the C@SnS 2 composite outperforms that of SnS 2 nanoflowers. After 100 cycles, the reversible discharge specific capacity reaches an impressive value of 802 mAh g -1 at a current density of 100 mA g -1 . Even after 600 cycles, the discharge specific capacity remains a value of 442 mAh g -1 , under a high current density of 1 A g -1 . Further, this remarkable lithium-ion storage performance can be attributed to the unique core-shell nanostructure and the synergy between SnS 2 nanosheets and carbon spheres. This study advances our understanding of the vital role of carbon in fabricating nano-heterojunction or composite electrodes and provides a feasible route to significantly improve the electrochemical properties of SnS 2 and other metal sulfides.
25 ENERGY STORAGE↗
SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film
Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (n) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short-circuit current density (J SC ) of 7.5 mA cm -2 . Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable J SC as the conventional heterojunction cells (≈25 mA cm -2 ), high n exceeding 4–5% will be realized with improving the VOC.
14 SOLAR ENERGY↗
Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity
Group IV monochalcogenides, anisotropic van der Waals crystals (and black phosphorus analogues), are attracting increasing interest due to a number of exceptional properties including anisotropic optoelectronics and multiferroicity predicted and in part realized in the ultrathin limit. Due to their enhanced chemical reactivity, both exfoliation and synthesis of monolayer and few-layer crystals pose challenges not found in other 2D/layered materials, such as the transition metal dichalcogenides. In this work, we show that SnS synthesis on SnS 2 van der Waals substrates can address these challenges and consistently produces few-layer flakes, a capability that is explained via analysis of real-time microscopy of the growth process. Raman spectroscopy combined with efficient computations of the Raman-active modes across an extended thickness range enables a comprehensive understanding of the evolution of the vibrational properties of SnS with number of layers. Lateral piezoresponse force microscopy provides unprecedented insight into the stacking-dependent polarization and ferroelectric domain structures in large few-layer SnS flakes. The combined results establish a basis for further fundamental studies and applications of SnS and other group IV monochalcogenides in the few-layer regime.
36 MATERIALS SCIENCE↗
Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. Further, the results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
2D layered crystals↗
H - Ion Source RF Plasma Testing with 13 MHz and 27 MHz at the Spallation Neutron Source (SNS)
The baseline RF-driven H⁻ ion source configuration at the Spallation Neutron Source (SNS) facility uses a continuous wave (CW) 600 W 13 MHz RF system to ignite and maintain a low-density plasma inside the ion source vacuum chamber. After the continuous low-density 13 MHz plasma has been established, a pulsed (typical 1 ms pulse width and 60 Hz pulse repetition rate) 80 kW 2 MHz RF system is used to increase the plasma density to produce the pulsed H⁻ ion beam. Incremental upgrades and improvements to the SNS ion source systems have resulted in the ability to reliably operate an H⁻ ion source for SNS neutron production run cycles that can last up to four months. Conditions inside the SNS H⁻ ion source evolve throughout a four-month run cycle due to changes in impurity levels, sputtering, and erosion. As the internal ion source conditions change during the run cycle, there can also be changes in plasma stability and the 13 MHz RF power level required to ignite the plasma. This paper presents the preliminary results of testing performed on the SNS Ion Source Test Stand (ISTS) system where we looked at plasma ignition and plasma stability using 27 MHz RF in place of the baseline 13 MHz RF system.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
The implementation of the graphics of program EAGLE: A numerical grid generation code on NASA Langley SNS computer system
Program EAGLE (Eglin Arbitrary Geometry Implicit Euler) Numerical Grid Generation System is a composite (multi-block) algebraic or elliptic grid generation system designed to discretize the domain in and/or around any arbitrarily shaped three dimensional regions. This system combines a boundary conforming surface generation scheme and includes plotting routines designed to take full advantage of the DISSPLA Graphics Package (Version 9.0). Program EAGLE is written to compile and execute efficiently on any Cray machine with or without solid state disk (SSD) devices. Also, the code uses namelist inputs which are supported by all Cray machines using the FORTRAN compiler CFT77. The namelist inputs makes it easier for the user to understand the inputs and operation of Program EAGLE. EAGLE's numerical grid generator is constructed in the following form: main program, EGG (executive routine); subroutine SURFAC (surface generation routine); subroutine GRID (grid generation routine); and subroutine GRDPLOT (grid plotting routines). The EAGLE code was modified to use on the NASA-LaRC SNS computer (Cray 2S) system. During the modification a conversion program was developed for the output data of EAGLE's subroutine GRID to permit the data to be graphically displayed by IRIS workstations, using Plot3D. The code of program EAGLE was modified to make operational subroutine GRDPLOT (using DI-3000 Graphics Software Packages) on the NASA-LaRC SNS Computer System. How to implement graphically, the output data of subroutine GRID was determined on any NASA-LaRC graphics terminal that has access to the SNS Computer System DI-300 Graphics Software Packages. A Quick Reference User Guide was developed for the use of program EAGLE on the NASA-LaRC SNS Computer System. One or more application program(s) was illustrated using program EAGLE on the NASA LaRC SNS Computer System, with emphasis on graphics illustrations.
Houston, Johnny L.↗
Monitoring the SNS basement neutron background with the MARS detector
Here, we present the analysis and results of the first dataset collected with the MARS neutron detector deployed at the Oak Ridge National Laboratory Spallation Neutron Source (SNS) for the purpose of monitoring and characterizing the beam-related neutron (BRN) background for the COHERENT collaboration. MARS was positioned next to the COH-CsI coherent elastic neutrino-nucleus scattering detector in the SNS basement corridor. This is the basement location of closest proximity to the SNS target and thus, of highest neutrino flux, but it is also well shielded from the BRN flux by infill concrete and gravel. Furthermore, these data show the detector registered roughly one BRN per day. Using MARS' measured detection efficiency, the incoming BRN flux is estimated to be 1.20 ± 0.56 neutrons/m 2 /MWh for neutron energies above ~3.5 MeV and up to a few tens of MeV. We compare our results with previous BRN measurements in the SNS basement corridor reported by other neutron detectors.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Design improvements to the SNS ion source and diagnostics
The U.S. Spallation Neutron Source (SNS) is a state-of-the-art neutron scattering facility delivering the world's most intense pulsed-neutron beams to a wide array of instruments which are used to conduct investigations in many fields of science and engineering. The accelerator system is fed by an RF-driven, multicusp, H - ion source which nominally provides pulsed beam currents of 50-60 mA (1ms, 60Hz). This report provides a discussion of ongoing design improvements to the SNS ion source and Low Energy Beam Transport (LEBT) as well as diagnostic upgrades undertaken since the previous ICIS conference. These improvements include (i) simple mechanical modifications to the source outlet aperture which resulted in dramatically increased extracted beam current and comparable or lower emittance at similar beam currents, (ii) design improvements to the LEBT chopper target which will enable full power beam-dumping during physics studies, (iii) refinement of the SNS Allison emittance scanner that has enabled the first reliable LEBT beam measurements at full beam power (65kV, 50-100mA, 1ms, 60Hz) on the SNS ion source test stand and (iv) the implementation of a thermal imaging camera for the monitoring the LEBT electrode temperatures. (v) The design of an advanced Cs system, capable of more efficient Cs utilization with significantly lower Cs losses from the source is also presented. Mechanical details, computational simulations and experimental results are discussed within the context of these improvements.
47 OTHER INSTRUMENTATION↗