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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

A preliminary review of organic materials single crystal growth by the Czochralski technique

The growth of single crystals of organic compounds by the Czochralski method is reviewed. From the literature it is found that single crystals of benzil, a nonlinear optical material with a d sub 11 value of 11.2 + or - 1.5 x d sub 11 value of alpha quartz, has fewer dislocations than generally contained in Bridgman crystals. More perfect crystals were grown by repeated Czochralski growth. This consists of etching away the defect-containing portion of a Czochralski grown crystal and using it as a seed for further growth. Other compounds used to grow single crystals are benzophenone, 12-tricosanone (laurone), and salol. The physical properties, growth apparatus, and processing conditions presented in the literature are discussed. Moreover, some of the possible advantages of growing single crystals of organic compounds in microgravity to obtain more perfect crystals than on Earth are reviewed.

Penn, B. G.↗
NASA NTRS2013

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Su, Ching-Hua↗
NASA NTRS1973

Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

Byers, M. S.↗
DOE OSTI2025

Unusual Li 2 O sublimation promotes single-crystal growth and sintering

Li 2 O is rarely used for cathode material synthesis due to its high melting point (1,438 °C). Here we discover that Li 2 O can sublimate at 800-1,000 °C under ambient pressure, opening new possibilities for cathode synthesis. We propose a mechanism that enables synthesis of single crystals-such as LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811) or LiNi 0.9 Mn 0.05 Co 0.05 O 2 (NMC90)-without direct contact with Li 2 O salts. We show that Li 2 O vapour successfully converts spent polycrystalline NMC811 into segregated single crystals without milling or post-treatment. The Li 2 O vapour, derived from Li 2 O solids, diffuses rapidly and reacts with precursors, mimicking a molten-salt environment, which facilitates single-crystal growth. The chemical lithiation process continuously drives Li 2 O sublimation, sintering the crystals. Single crystals derived from Li 2 O and fresh precursors or spent polycrystals exhibit outstanding cycling after 1,000 cycles in full cells. The demonstrated Li 2 O sublimation and its universal role in promoting single-crystal growth provides an effective approach for single-crystal synthesis, scale-up and recycling.

25 ENERGY STORAGE↗
NASA NTRS1985

KNbO3 single crystal growth by the radio frequency heating Czochralski method

A radio frequency heating Czochralski technique to obtain single crystal KNbO3 is first presented. The technological parameters of KNbO3 crystal growth by the Czochralski technique and its pulling conditions were studied in detail. The experiments on second harmonic generation using 1.06 micrometer Nd:YAG laser in KNbO3 have been conducted. The second harmonic efficiency for upconversion of KNbO3 is found to be as high as that of NaBa2Nb5O15. An automatic scanning measurement for the optical homogeneity of KNbO crystal is also described. KNbO3 is revealed to be a potentially useful nonlinear material for optical device applications.

Wang, W.↗
NASA NTRS1993

Thermal spray forming of refractory sample ampoule cartridges for single crystal growth space furnaces

A thermal spray process is being used to build up refractory metals and ceramics into a containment cartridge for high temperature, single crystal semiconductor growth experiments. This process uses high energy plasma inside a low pressure (100-200 torr) inert environment to apply layers of material onto a removable mandrel. A variety of materials are being characterized and evaluated against a demanding set of requirements, including high service temperature (1700 C), oxidation resistance, and resistance to liquid metal attack. Techniques to spray form refractory metals (tungsten, molybdenum, niobium, tantalum) and ceramics (alumina, boron nitride) are being developed in the Plasma Spray Cell at Marshall Space Flight Center. These plasma spray formed materials have been evaluated for mechanical properties, density, microstructure, and resistance to liquid metal attack. Forming techniques and the resultant mechanical and metallurgical properties will be presented.

Zimmerman, Frank↗
NASA NTRS1993

Thermal spray forming of refractory sample ampoule cartridges for single crystal growth space furnaces

A thermal spray process is being used to build up refractory metals and ceramics into a containment cartridge for high temperature, single crystal semiconductor growth experiments. This process uses high energy plasma inside a low pressure (100-200 torr) inert environment to apply layers of material onto a removable mandrel. A variety of materials are being characterized and evaluated against a demanding set of requirements, including high service temperature (1700 C), oxidation resistance, and resistance to liquid metal attack. Techniques to spray form refractory metals (tungsten, molybdenum, niobium, tantalum) and ceramics (alumina, boron nitride) are being developed in the Plasma Spray Cell at Marshall Space Flight Center. These plasma spray formed materials have been evaluated for mechanical properties, density, microstructure, and resistance to liquid metal attack. Forming techniques and the resultant mechanical and metallurgical properties are presented.

Zimmerman, Frank↗
NASA NTRS1980

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗
NASA NTRS1982

Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications

Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.

Khattak, C. P.↗
NASA NTRS1982

III-V semiconductor solid solution single crystal growth

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Gertner, E. R.↗
NASA NTRS1972

A Study of the Growth of Single Crystals

Research on the growth of single crystals of the III-V compound indium antimonide was pursued in order to gain a firsthand knowledge of some factors which govern the growth of single crystals of this compound. These studies were conducted using a standard Czochralski crystal pulling furnace. This type of furnace allows crystals to be formed without being constrained to a crucible. Several factors were found to have a large detrimental effect on the growth of single crystals of indium antimonide, the most important of which seems to be the degree to which the environment surrounding the crystal during growth can be controlled. Ways to overcome these effects were determined and are outlined.

Desmet, D. J.↗
NASA NTRS1985

High-thermal-gradient Superalloy Crystal Growth

Single, (001)-oriented crystals of PWA 1480 were processed in alumina/silica shell molds in a laboratory high gradient furnace. The furnace employs a graphite resistance heated element, a radiation baffle, and a water cooled radiation trap below the baffle. All crystals were grown in vacuum (10 torr) and all heat transfer was radiative. The element is constructed with a variable cross section that is tapered just above the baffle to maximize heat input and therefore thermal gradient. A maximum alloy temperature of 1600 C was used. A thermal gradient of 130 deg C/cm was recorded at 1370 C just above the solidus of the PWA 1480 alloys. Crystal bars with 14.4 and 17.5 mm diameters were grown in alumina/silica shell molds. Each crystal was started from a 1.6 mm pencil seed at a rate of 76 mm/hr and slowly accelerated to a rate of 200 mm/hr under computer control. Volume percent porosity and average pore size were measured as functions of distance in representative bars. Low cycle fatigue behavior and stress rupture properties were determined.

Pearson, D. D.↗
NASA NTRS1992

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

Ong, T. P.↗
NASA NTRS1986

Crack growth in single-crystal silicon

Crack growth in single-crystal silicon at room temperature in air was evaluated by double torsion (DT) load-relaxation method and monitored by acoustic emission (AE) technique. Both DT and AE methods indicated lack of subcritical crack growth in silicon. At the critical stress intensity factor, the crack front was found to be jumping several times in a 'mirror' region and then followed by fast crack growth in a 'hackle' region. Hackle marks were found to be associated with plastic deformation at the tip of the fast moving crack. No dislocation etch pits were found in the 'mirror' region, in which crack growth may result from interatomic bonds broken at the crack tip under stress without any plastic deformation. Acoustic emission appears to be spontaneously generated from both interatomic bonds broken and dislocation generation at the moving crack tip during the crack growth in single-crystal silicon.

Chen, C. P.↗