Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Single Event Upset (SEU) Testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

A radiation tolerant clock generator for the CMS endcap timing layer readout chip

Here, we present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low Power Gigabit Transceiver (lpGBT) project. The ljCDR is tested in its PLL mode. An automatic frequency calibration (AFC) block with the Triple Modular Redundancy (TMR) register is developed for the LC-oscillator calibration. The chip was manufactured in a 65 nm CMOS process with 10 metal layers. The chip has been extensively tested, including Total Ionizing Dose (TID) testing up to 300 Mrad and Single Event Upset (SEU) testing with heavy ions possessing a Linear Energy Transfer (LET) from 1.3 to 62.5 MeV × cm 2 /mg.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗

The design and test results of A Giga-Bit Cable Receiver (GBCR) for the ATLAS Inner Tracker Pixel Detector

This paper presents the design and test results of a Gigabit Cable Receiver ASIC called GBCR for the HL-LHC upgrade of the ATLAS Inner Tracker (ITk) pixel detector. Three prototypes (GBCR1, GBCR2, and GBCR3) have been designed in the CERN-identified 65 nm CMOS technology. GBCR receives seven (GBCR2) or six (GBCR3) channels (RX) each at 1.28 Gbps from the front-end readout chip RD53B via flex cables up to 1 meter and Twinax cables up to 5 meters and sends the equalized and retimed signals to lpGBT. Both GBCR2 and GBCR3 ASICs have two transmitting channels (TX) that pre-emphasize the signals from lpGBT before sending them to RD53B through the same cables. No Single-Event Upset (SEU) is observed in any tested channels of GBCR2 in a 400 MeV proton beam. The extrapolated bit error rate for the future HL-LHC application is below 8*10^(-16), significantly below the specified BER criterion. GBCR3 is designed to improve the immunity to single-event-upset by applying the Triple Modular Redundancy (TMR) technology to all RX channels. The retimed signals from GBCR3 have less total jitter than those from GBCR2 (35 ps versus 79 ps). Each receiver channel of GBCR3 consumes 75% more power than that of GBCR2.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

RD53 pixel readout integrated circuits for ATLAS and CMS HL-LHC upgrades

The RD53 collaboration has since 2013 developed new hybrid pixel detector chips with 50 × 50 μm2 pixels for the HL-LHC upgrades of the ATLAS and CMS experiments at CERN. A common architecture, design and verification framework has been developed to enable final pixel chips of different sizes to be designed, verified and tested to handle extreme hit rates of 3 GHz/cm2 (up to 12 GHz per chip) together with an increased trigger rate of 1 MHz and efficient readout of up to 5.12 Gbits/s per pixel chip. Tolerance to an extremely hostile radiation environment with 1 Grad over 10 years and induced SEU (Single Event Upset) rates of up to 100 upsets per second per chip have been major challenges to make reliable pixel chips. Three generations of pixel chips, and many specific mixed signal building blocks and radiation test chips, have been submitted and extensively tested to get to final production chips. The large, complex and high rate pixel chips have been developed with a strong emphasis on low power consumption together with a concurrent development and qualification of novel serial powering at chip, module and system level, to minimize detector material budget.

Alimonti, G↗