An experimental study of drift-field silicon solar cells.
Silicon solar cell with drift fields of various widths and magnitudes, considering performance changes before and after radiation
SILICON JUNCTION↗
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High-efficiency silicon solar cells
Silicon solar cells are described which operate at energy conversion efficiencies independently measured at 18.7 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are apparently the most efficient silicon cells fabricated to date. The high-efficiency results from a combination of high open-circuit voltage due to the careful attention paid to the passivation of the top surface of the cell, high fill factor due to the high open-circuit voltage and low parasitic resistance losses, and high short-circuit current density due to the use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating.
Green, M. A.↗
18-percent efficient terrestrial silicon solar cells
Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.
Blakers, A. W.↗
V-grooved silicon solar cells
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80 percent of those collected in the valleys.
Baraona, C. R.↗
V-grooved silicon solar cells
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces have been made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80% of those collected in the valleys.
Baraona, C. R.↗
Ultraviolet irradiation at elevated temperatures and thermal cycling in vacuum of FEP-A covered silicon solar cells
Silicon solar cells covered with FEP-A were irradiated in vacuum with ultraviolet light and then subjected to thermal cycling. These accelerated laboratory conditions are believed to be equivalent to those experienced by FEP-A covered cells on the ATS-6 spacecraft and the results indicate a probable mechanism for the faster degradation of the FEP-A covered cells. Heat-bonded FEP-A covers apparently embrittle when exposed to four months of space UV radiation at elevated temperatures, and crack when subjected to thermal cycling during the eclipse period. Low energy proton radiation can then penetrate to the junction of the cell causing degradation of the open circuit voltage and maximum power to occur. An alternate method of application of FEP-A, such as with adhesives, may prevent such cracking.
Broder, J. D.↗
Historical perspective of barriers to achieving high-efficiency silicon solar cells
Early silicon solar cells were made of metallurgical-grade silicon with very low efficiency. The single-crystal silicon introduced in the mid-50's increased the efficiency to the 5% to 10% region. Throughout the 1960s the technology of the 2 x 2 cm or 2 x 4 cm space solar cell with 10% efficiency was established. In the early 1970s work related to the violet cell upset the status quo and space solar cells and cells in general became more efficient. The rest of the decade became characterized by establishing a terrestrial photovoltaic technology to support the development of a new industry. Costs per watt became the dominant consideration and frequently the efficiency was compromised. The introduction of materials and other forms of silicon dropped the efficiency and it is now a state of mine that accomplishing 10% efficiency with some alternative combination is regarded as success. Silicon solar cells are capable of delivering efficiences much greater than 10%.
Lindmayer, J.↗
Flexible, low-cost silicon solar cell arrays
Silicon solar cell arrays are pressure-bonded to flexible backing and protected by fluorinated ethylene propylene cover in one mechanized operation. Arrays packaged by this method are flexible, lightweight, insulated, breakage resistant and less expensive.
Forestieri, A. F.↗
Radiation damage and annealing of amorphous silicon solar cells
Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.
Byvik, C. E.↗
Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells
Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.
Anspaugh, B. E.↗
Novel duplex vapor-electrochemical method for silicon solar cells
Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.
Kapur, V. K.↗
Novel duplex vapor-electrochemical method for silicon solar cells
Silicon obtained by the SiF4-Na reaction was analyzed by spark source mass spectrometry (SSMS). Silicon samples prepared from induction melted powder were evaluated for electrical properties using four point probe conductivity and thermoelectric methods. SiF4-Na reaction under P sub SiF4 greater than 1 atmosphere. The amount of silicon produced was increased from 25 g per batch (in the glass reactor) to greater than 70 g per batch in the stainless steel reactor. The study of the effects of reaction variables such as P sub SiF4 and maximum temperature attained on the particle size of silicon powder showed that the silicon particle size tends to grow larger with increasing pressure of the SiF4 gas in the reaction system.
Kapur, V. K.↗
Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells
Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).
Garlick, G. F. J.↗
The development of solar cells.
Silicon solar cells impurities, radiation resistance, fabrication, nonsilicon materials, development, etc
SILICON↗
Development of standardized specifications for silicon solar cells
A space silicon solar cell assembly (cell and coverglass) specification aimed at standardizing the diverse requirements of current cell or assembly specifications was developed. This specification was designed to minimize both the procurement and manufacturing costs for space qualified silicon solar cell assembilies. In addition, an impact analysis estimating the technological and economic effects of employing a standardized space silicon solar cell assembly was performed.
Scott-Monck, J. A.↗
Comprehensive Silicon-Solar-Cell Program
Comprehensive Silicon Solar Cell Computer Modeling (SICELL) program simulates silicon solar cell. Predicts device parameters as efficiency, voltage-vs.-current characteristic fill factor, and temperature coefficients of parameters. Technique used similar to numerical-integration methods, but commonality described by use of mesh-point field. Validation studies show accuracies of simulations range from 0.08 percent to 3.6 percent for 27 experimental data points over temperature range of 300K to 421K. Results obtained by use of 10 mesh points in n- and p-type regions and for two iterations. SICELL runs interactively on VAX computer under VMS and written in VAX/VMS FORTRAN 77.
Lamorte, Michael F.↗
Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells
Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.
Berman, P. A.↗
Aluminum doping improves silicon solar cells
Aluminum doped silicon solar cells with resistivities in the 10- to 20-ohm centimeter range have broad spectral response, high efficiency and long lifetimes in nuclear radiation environments. Production advantages include low material rejection and increased production yields, and close tolerance control.
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