An experimental study of drift-field silicon solar cells.
Silicon solar cell with drift fields of various widths and magnitudes, considering performance changes before and after radiation
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Silicon solar cell with drift fields of various widths and magnitudes, considering performance changes before and after radiation
While silicon solar cells dominate global photovoltaic energy production, their continued improvement is hindered by the single-junction limit. One possible solution is to use molecular singlet exciton fission to generate two electrons from each absorbed high-energy photon. We demonstrate that the long-standing challenge of coupling molecular excited states to silicon solar cells can be overcome using sequential charge transfer. Combining zinc phthalocyanine, aluminum oxide, and a shallow junction crystalline silicon microwire solar cell, the peak charge generation efficiency per photon absorbed in tetracene is (138% ± 6%), comfortably surpassing the quantum efficiency limit for conventional silicon solar cells and establishing a new, scalable approach to low-cost, high-efficiency photovoltaics.
Silicon solar cell arrays are pressure-bonded to flexible backing and protected by fluorinated ethylene propylene cover in one mechanized operation. Arrays packaged by this method are flexible, lightweight, insulated, breakage resistant and less expensive.
Silicon solar cells impurities, radiation resistance, fabrication, nonsilicon materials, development, etc
Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.
Aluminum doped silicon solar cells with resistivities in the 10- to 20-ohm centimeter range have broad spectral response, high efficiency and long lifetimes in nuclear radiation environments. Production advantages include low material rejection and increased production yields, and close tolerance control.
Lithium doped silicon solar cells under electron irradiation and determination of semiconductor parameters
Lithium doped silicon solar cells for improved radiation resistance to neutrons, protons, and electrons
The requirements for 10 ohm cm N-ON-P, silicon solar cells, for use on solar panel assemblies for space flight applications are specified.
Lithium use in silicon solar cell for radiation resistance improvement, noting preservation of minority carrier lifetime
Uniform damage to silicon solar cells by fast protons or electrons
Silicon solar cell lightweight integrated array for large arrays, discussing deployment and orientation mechanisms, ribbon coverglass technique and cost estimates
Future costs of silicon solar cells are projected on the basis of more than a thousand-fold increase in volume. If no major application of new manufacturing technology is made, the cost remains excessive for any large scale energy system. However, the development of a multiple-ribbon crystal growth process could permit a 300-fold reduction in cell costs to about $375/kW of cell output.
Epitaxial structures for radiation resistant silicon solar cells
Photon radiation effects on silicon solar cells from Van de Graaff accelerator studies below 2 MeV energy