Silicon detector R&D for the future Electron-Ion Collider
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Atomic, Nuclear and Particle Physics↗
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Performance of position-sensitive resistive silicon detectors in the Forward Array Using Silicon Technology (FAUST)
The silicon telescopes of the Forward Array Using Silicon Technology (FAUST) have been recently upgraded with silicon detectors which use resistive charge-splitting to measure the position of charged particles. This is in addition to the measurement of the total energy that these charged particles deposit in the detector. The upgrade results in increased angular resolution with a much smaller number of signals than silicon strip detectors with similar resolution. Here, a novel method of calibration has been used to demonstrate the efficacy of these position-sensitive detectors, and the detectors have been used in a commissioning experiment.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space
Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.
Astronomical detectors↗
Cherenkov photon background for low-noise silicon detectors in space
Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
High event rate analysis technique for the dual-axis duo-lateral position-sensitive silicon detectors of FAUST
The dual-axis duo-lateral (DADL) position-sensitive silicon detector was developed to obtain precise position and energy information for detected charged particles. The Forward Array Using Silicon Technology (FAUST) is currently equipped with 68 DADL detectors backed by CsI(Tl) scintillators for the study of charged particle correlations in heavy-ion collisions where precise position and energy information is essential. When conventional signal processing electronics were used for the DADL detectors, a position dependence of the measured energy as well as distortions in the calculated particle positions were observed. In previous work, waveforms from the detector after preamplification were studied to better understand the features that give rise to these distortions; therein, a waveform analysis technique was developed to improve the energy resolution and linearity in position reconstruction. However, the reading and writing of waveforms for an entire detector array limits data collection rates and adds significant burden in data storage and analysis speed. In this work, the integrators of a Struck SIS3316 ADC were utilized to process 228 Th source data to develop and optimize a new analysis method that captures the benefits of the waveform analysis technique while circumventing the waveform writing requirement. This integrator method – capable of 59 keV (FWHM) energy resolution – was used in the collection of 35 MeV/nucleon 28 Si + 12 C collision data using FAUST to investigate exotic decays of highly excited highly deformed nuclei. In this data, a position resolution of 0.4 mm (FWHM) was obtained for 25 MeV α-particles; for α-particles near this energy that originate from 8 Be ground state decays, a 8 Be ground state width of 30 keV (FWHM) was obtained. The impact of the energy-dependent DADL position resolution emergent from electronic noise on the quality of excited state measurement was modeled and compared to the experimental data.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Machine learning for precise hit position reconstruction in Resistive Silicon Detectors
RSDs are LGAD silicon sensors with 100% fill factor, based on the principle of AC-coupled resistive read-out. Signal sharing and internal charge multiplication are the RSD key features to achieve picosecond-level time resolution and micron-level spatial resolution, thus making these sensors promising candidates as 4D-trackers for future experiments. This paper describes the use of a neural network to reconstruct the hit position of ionizing particles, an approach that can boost the performance of the RSD with respect to analytical models. The neural network has been trained in the laboratory and then validated on test beam data. The device-under-test in this work is a 450 μm-pitch matrix from the FBK RSD2 production, which achieved a resolution of about 65 μm at the DESY Test Beam Facility, a 50% improvement compared to a simple analytical reconstruction method, and a factor two better than the resolution of a standard pixel sensor of equal pitch size with binary read-out. The test beam result is compatible with the laboratory ones obtained during the neural network training, confirming the ability of the machine learning model to provide accurate predictions even in environments very different from the training one. Prospects for future improvements are also discussed.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions
Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Characterization of Low-energy Ionization Signals in Silicon Detectors for the Nab Experiment
The Nab (Neutron a b) experiment is designed to measure the beta-antineutrino angular correlation in free neutron 𝛽 decay with an ultimate precision goal of 0.1%, providing input for tests of Cabibbo-Kobayashi-Maskawa matrix unitarity. This measurement is performed via detection of electrons and protons in delayed coincidence using custom large-area segmented silicon detectors. We present the characterization of one such detector system to establish the proton energy and timing response, using a dedicated proton accelerator. The detected proton peak was studied for 25, 30, and 35 keV incident protons on a set of detector segments and multiple cooling cycles over a one-year period. Ionization losses were consistent with models of the detector dead layer with thicknesses less than 100 nm. The detected proton peak was stable within the uncertainty from energy calibration (0.25 keV). The rise times of detector pulses from 109Cd and 113Sn conversion electron sources were used to extract the impurity density profile and establish a precise model for the detector timing response. The observed impurity density profile varied from (2±2)×109/cm3 at the center to (26±2)×109/cm3 at the edge. This impurity density profile was then used to characterize systematic effects in proton time-of-flight measurements due to detector pulse-shape effects; the resultant proton timing systematic uncertainties were below 0.3 ns, which is sufficient for the Nab experiment.
Taylor, RJ [North Carolina State University]↗
Thickness and uniformity mapping of thin foils using resistive silicon detectors
Alpha energy loss is a common tool used for measuring target thicknesses. However, these measurements are often made without position information, which either forfeits knowledge of material uniformity and local thickness or requires a prohibitive number of measurements per target to partially recover this information. In consideration of this, a method for measuring position-dependent thicknesses is described in this work; by using the position-sensitivity of the dual-axis duo-lateral (DADL) silicon detector, thicknesses across the entire face of the material can be measured to sub-mm precision with a single measurement. Several examples are presented using a number of targets with varying characteristics, which altogether demonstrate the precision, accuracy, and versatility of this technique.
Foil uniformity↗
A New Search for Low-mass Dark Matter and an Examination and Reduction of the Uncertainty due to the Photoelectric Absorption Cross Section using a Cryogenic Silicon Detector with Single-charge Sensitivity
Many astrophysical observations point to the abundant existence of dark matter (DM) in the universe composed of particles beyond the Standard Model. However despite numerous experiments using different techniques, DM particles have yet to be directly observed. The Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment will employ silicon and germanium crystal detectors operated at temperatures as low as 15~mK to probe DM interactions using phonon and ionization signals. Recently, R\&D; facilities have developed gram-sized high-voltage eV-scale (HVeV) silicon detectors that achieve single-electron-hole-pair resolution. By probing effective DM-electron interactions, these devices can be used for searches of low-mass DM candidates.This dissertation presents a DM search experiment known as HVeV Run~2 that employs a second-generation HVeV detector operated in an above-ground laboratory at Northwestern University (IL, USA). Energy spectra are obtained from a blind analysis with 0.39 and 1.2\,g-days of exposure with the detector biased at 60 and 100\,V, respectively. The 0.93~gram detector achieves a 3\,eV phonon energy resolution, corresponding to a world-leading charge resolution of 3\,\% of a single electron-hole pair for a detector bias of 100\,V. With charge carrier trapping and impact ionization effects incorporated into the DM signal models, the resulting exclusion limits are reported for inelastic DM-electron scattering for DM masses from 0.5--$10^{4}$\,MeV$/c^{2}$; in the mass range from 1.2--50\,eV$/c^{2}$ the limits for dark photon and axion-like particle absorption are reported.Several DM search experiments, including HVeV Run~2, are sensitive to low-mass DM candidates that rely on the temperature-dependent photoelectric absorption cross section of silicon. However discrepancies in the underlying literature data result in dominating systematic uncertainties on the DM exclusion limits. In order to reduce these systematic uncertainties, this dissertation presents a novel method of making a direct, low-temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap (1.2--2.8\,eV).
Wilson, Matthew James↗
The FABLE silicon detector array for comprehensive studies of fusion and breakup dynamics
The Fusion and Breakup of Light Elements (FABLE) array, comprised of ΔE-E telescopes of neutron-transmutation doped (NTD) Double-Sided Silicon Strip Detectors (DSSDs), has been developed and commissioned for future experiments at the Facility for Rare Isotope Beams (FRIB). FABLE was designed to perform measurements of complete and incomplete fusion cross sections, to help address the interplay between breakup and clustering in outcomes of reactions with exotic nuclides. Here, the FABLE array has been commissioned in a comprehensive study at the ReAccelerator facility ReA6 of the Facility for Rare Isotope Beams (FRIB), investigating the dynamics in the weakly-bound proton rich 7 Be reaction on 208 Pb targets.
Breakup↗
Optimization of the gain layer design for radiation hard LGAD based silicon detectors
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36 MATERIALS SCIENCE↗
AC-LGAD silicon detectors with alternate gain layer for improved reliability.
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36 MATERIALS SCIENCE↗
Single electron–hole pair sensitive silicon detector with surface event discrimination
Here, we demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device. We saw only a small reduction in dark event rate with this biasing scheme, further suggesting that sidewall and edge-dominated processes are responsible for the majority of these events.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
High-precision 4D tracking with large pixels using thin resistive silicon detectors
Not provided.
Instruments & Instrumentation↗
Collective excitations and low-energy ionization signatures of relativistic particles in silicon detectors
Abstract Solid-state detectors with a low energy threshold have several applications, including searches of non-relativistic halo dark-matter particles with sub-GeV masses. When searching for relativistic, beyond-the-Standard-Model particles with enhanced cross sections for small energy transfers, a small detector with a low energy threshold may have better sensitivity than a larger detector with a higher energy threshold. In this paper, we calculate the low-energy ionization spectrum from high-velocity particles scattering in a dielectric material. We consider the full material response including the excitation of bulk plasmons. We generalize the energy-loss function to relativistic kinematics, and benchmark existing tools used for halo dark-matter scattering against electron energy-loss spectroscopy data. Compared to calculations commonly used in the literature, such as the Photo-Absorption-Ionization model or the free-electron model, including collective effects shifts the recoil ionization spectrum towards higher energies, typically peaking around 4–6 electron-hole pairs. We apply our results to the three benchmark examples: millicharged particles produced in a beam, neutrinos with a magnetic dipole moment produced in a reactor, and upscattered dark-matter particles. Our results show that the proper inclusion of collective effects typically enhances a detector’s sensitivity to these particles, since detector backgrounds, such as dark counts, peak at lower energies.
Physics↗
Beam test performance of prototype silicon detectors for the Outer Tracker for the Phase-2 Upgrade of CMS
A new CMS tracker detector will be installed for operation at the High Luminosity LHC (HL-LHC). This detector comprises modules with two closely spaced parallel sensor plates and front-end ASICs capable of transmitting tracking information to the CMS Level-1 (L1) trigger at the 40 MHz beam crossing rate. The inclusion of tracking information in the L1 trigger decision will be essential for selecting events of interest efficiently at the HL-LHC. The CMS Binary Chip (CBC)has been designed to read out and correlate hits from pairs of tracker sensors, forming so called track stubs. For the first time, a prototype irradiated module and a full-sized module, both equipped with the version 2 of the CBC, have been operated in test beam facilities. The efficiency of the stub finding logic of the modules for various angles of incidence has been studied. The ability of the modules to reject tracks with transverse momentum less than 2 GeV has been demonstrated. For modules built with irradiated sensors, no significant drop in the stub finding performance has been observed. Results from the beam tests are described in this paper.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗