Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Silicon Waveguide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Micromachined Silicon Waveguide Circuits

Rectangular waveguides are commonly used as circuit elements in remote-sensing heterodyne receivers at millimeter wavelengths. The advantages of waveguides are low loss and mechanical tunability. However, conventional machining techniques for waveguide components operating above a few hundred GHz are complicated and costly. Waveguides micromachined from silicon however would have several important advantages including low-cost; small size for very high frequency (submillimeter wave) operation; high dimensional accuracy (important for high-Q circuits); atomically smooth walls, thereby reducing rf losses; and the ability to integrate active and passive devices directly in the waveguide on thin membranes, thereby solving the traditional problem of mounting thin substrates.

Silicon Waveguide↗
NASA NTRS1994

Micromachined Silicon Waveguides

Components that handle millimeter and submillimeter wavelengths fabricated conveniently. Micromachining rectangular waveguide involves standard steps of masking, etching, and deposition of metal on silicon. Parts made assembled into half-waveguide and finally into full waveguide. Silicon-micromachining approach enables simultaneous fabrication of several versions of waveguide, with variations in critical parameter, on single wafer of silicon. Performances of versions compared and optimized more quickly and at lower cost than is possible if different versions are fabricated sequentially, by conventional machining techniques.

Mcgrath, William R.↗
NASA NTRS1993

Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

Rectangular waveguide is commonly used up to high millimeter-wave frequencies. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. The development of silicon micro-machining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements of gold plated silicon waveguide show performance comparable to standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems.

Mcgrath, William R.↗
NASA NTRS1992

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Yap, Markus↗
NASA NTRS2002

Measured Propagation Characteristics of Finite Ground Coplanar Waveguide on Silicon with a Thick Polyimide Interface Layer

Measured propagation characteristics of Finite Ground Coplanar (FGC) waveguide on silicon substrates with resistivities spanning 3 orders of magnitude (0.1 to 15.5 Ohm cm) and a 20 micron thick polyimide interface layer is presented as a function of the FGC geometry. Results show that there is an optimum FGC geometry for minimum loss, and silicon with a resistivity of 0.1 Ohm cm has greater loss than substrates with higher and lower resistivity. Lastly, substrates with a resistivity of 10 Ohm cm or greater have acceptable loss.

Ponchak, George E.↗
NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗
NASA NTRS1982

Measurement and analysis of periodic coupling in silicon-clad planar waveguides

Computer modeling studies indicate that planar dielectric waveguides clad with silicon exhibit a damped periodic oscillation in their attenuation and phase characteristics. The effect is due to a periodic coupling between the lossy, guided modes in the silicon film and the TE0 mode of the dielectric waveguide. Experimental confirmation of the periodic coupling for a wavelength of 632.8 nm is presented. Propagation characteristics for a wavelength of 1150 nm were investigated for application in integrated optical modulators. Frequency filtering properties of silicon-clad waveguides are also examined and it is shown that the silicon thickness controls the filter response curve.

Mcwright, G. M.↗
NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗
NASA NTRS2015

Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

Ai, Jun↗
NASA NTRS1984

Polarization effects in silicon-clad optical waveguides

By changing the thickness of a semiconductor cladding layer deposited on a planar dielectric waveguide, the TE or TM propagating modes may be selectively attenuated. This polarization effect is due to the periodic coupling between the lossless propagating modes of the dielectric slab waveguide and the lossy modes of the cladding layer. Experimental tests involving silicon claddings show high selectivity for either polarization.

Carson, R. F.↗
NASA NTRS1995

Calculated Coupling Efficiency Between an Elliptical-Core Optical Fiber and a Silicon Oxynitride Rib Waveguide [Corrected Copy]

The effective-index method and Marcatili's technique were utilized independently to calculate the electric field profile of a rib channel waveguide. Using the electric field profile calculated from each method, the theoretical coupling efficiency between a single-mode optical fiber and a rib waveguide was calculated using the overlap integral. Perfect alignment was assumed and the coupling efficiency calculated. The coupling efficiency calculation was then repeated for a range of transverse offsets.

Tuma, Margaret L.↗
NASA NTRS1993

Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates

Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.

Taub, Susan R.↗
NASA NTRS2012

Fabrication of a Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

The Cosmology Large Angular Scale Surveyor (CLASS) is a ground-based instrument that will measure the polarization of the cosmic microwave background to search for evidence for gravitational waves from a posited epoch of inflation early in the Universe s history. This measurement will require integration of superconducting transition-edge sensors with microwave waveguide inputs with excellent control of systematic errors, such as unwanted coupling to stray signals at frequencies outside of a precisely defined microwave band. To address these needs we present work on the fabrication of micromachined silicon, producing conductive quarter-wave backshort assemblies for the CLASS 40 GHz focal plane. Each 40 GHz backshort assembly consists of three degeneratively doped silicon wafers. Two spacer wafers are micromachined with through-wafer vias to provide a 2.04 mm long square waveguide delay section. The third wafer terminates the waveguide delay in a short. The three wafers are bonded at the wafer level by Au-Au thermal compression bonding then aligned and flip chip bonded to the CLASS detector at the chip level. The micromachining techniques used have been optimized to create high aspect ratio waveguides, silicon pillars, and relief trenches with the goal of providing improved out of band signal rejection. We will discuss the fabrication of integrated CLASS superconducting detector chips with the quarter-wave backshort assemblies.

Crowe, Erik J.↗
NASA NTRS2002

Folded Coplanar Waveguide Slot Antenna on Silicon Substrates With a Polyimide Interface Layer

A novel mm-wave Coplanar Waveguide (CPW) folded slot antenna is characterized on low-resistivity Si substrate (1 omega-cm) and a high resistivity Si substrate with a polyimide interface layer for the first time. The antenna resonates around 30 GHz with a return loss greater than 14.6 dB. Measured radiation patterns indicate the existence of a main lobe, but the radiation pattern is affected by a strong surface wave mode, which is greater in the high resistivity Si wafer.

Bacon, Andrew↗
NASA NTRS1992

Novel Coplanar Waveguide to Slotline Transition on High Resistivity Silicon

Two novel coplanar waveguide (CPW) to slotline transitions have been fabricated and tested on high resistivity silicon. The first transition uses an air bridge to couple RF power from the CPW line to the slotline and has the entire circuit on the top side of the wafer. In the second transition, the grounded CPW line and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The measured average intersection loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30 percent at C-band frequencies.

Simons, R. N.↗
NASA NTRS1991

Optical waveguide formed by cubic silicon carbide on sapphire substrates

Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

Tang, Xiao↗
NASA NTRS2012

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

The Cosmology Large Angular Scale Surveyor (CLASS) is a ground-based instrument that will measure the polarization of the cosmic microqave background to search for gravitational waves form a posited epoch of inflation early in the universe's history. This measurement will require integration of superconducting transition-edge sensors with microwave waveguide inputs with good conrol of systematic errors, such as unwanted coupling to stray signals at frequencies outside of a precisely defined microwave band. To address these needs we will present work on the fabrication of silicon quarter-wave backshorts for the CLASS 40GHz focal plane. The 40GHz backshort consists of three degeneratively doped silicon wafers. Two spacer wafers are micromachined with through wafer vins to provide a 2.0mm long square waveguide. The third wafer acts as the backshort cap. The three wafers are bonded at the wafer level by Au-Au thermal compression bonding then aligned and flip chip bonded to the CLASS detector at the chip level. The micromachining techniques used have been optimized to create high aspect ratio waveguides, silicon pillars, and relief trenches with the goal of providing improved out of band signal rejection. We will discuss the fabrication of integrated CLASS superconducting detectors with silicon quarter wave backshorts and present current measurement results.

Crowe, Erik J.↗