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Multiplexed extrinsic silicon detector array
Multiplexed extrinsic silicon detector arrays for infrared applications were developed and tested. Cryogenic electronics are discussed. Ambient temperature electronics are also discussed.
The response of a 300 micron silicon detector to monoenergetic neutrons determined by the use of the Monte Carlo technique
The response of a 300 micron thick silicon detector to an incident monoenergetic neutron beam is evaluated by the Monte Carlo method for the cases of both a shielded and a bare detector. The result of Monte Carlo calculation, using elastic, inelastic, and absorption reactions indicates that the response of the silicon detector to neutrons is basically due to the elastic scattering. In addition, the gamma rays generated in the shield of the detector will result in a response which is 3 or 4 orders of magnitude smaller than response to incident photons. The response of a bare silicon detector is calculated for neutron energies up to 6 MeV and bias energies from 50 to 250 KeV. It is found that the maximum response for a 300 micron thick silicon detector is less than .004 c/n within this selected neutron and bias energy range. When the pulse height defect is introduced in the calculation the results at low energy neutrons were reduced.
Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space
Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.
Heavy-particle studies with silicon detectors
Response of lithium-drifted silicon detectors for radiobiologic applications
Heavy-particle studies with silicon detectors.
Response of lithium-drifted silicon detectors to high energy alpha and proton beam and radiobiologic application
Fluctuations of energy loss by heavy charged particles in silicon detectors - Preliminary measurements.
Thick lithium drifted semiconductor silicon detectors for investigation of fluctuations of energy loss by high and intermediate energy particles
Fabrication methods for lithium drifted surface barrier silicon detectors.
Fabrication methods for lithium drifted surface barrier silicon detectors, discussing lithium diffusion, stain etching, preparation for and final etch
Thin-film scintillators for extended ultraviolet /UV/ response silicon detectors
The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few microns thickness exhibit broad-band absorption from less than 250 nm to about 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near UV.
Further characterization of IRAS doped silicon detectors
Measurements made on several doped-silicon detectors are reported. Topics discussed include: Si:Sb detector, the effects of detector bias on dielectric relaxation; characterization of spontaneous noise and gamma-induced spikes and their circumvention; and the time response of two detectors to step changes in the background photon flux density. Several potential system programs are indicated.
Vacuum UV performance of silicon detectors
The sensitivity, time-varying response, and spatial sensitivity of four silicon detectors of vacuum UV were measured by passing a typical flux of 3 x 10 photons/s at the Lyman alpha line of 1215.7 A through an exit aperture of 0.55 mm x 0.8 mm. The detectors tested were: (1) a Fairchild FPM 200 silicon planar passivated photodiode with the window removed so that radiation could directly impinge on the center of the 1.0 mm square silicon chip, (2) a Fairchild FPM 100 silicon NPN planar passivated phototransistor, (3) the Hewlett-Packard 5082-4204 silicon planar PIN photodiode, and (4) the United Detector Technology PIN Spot/2 special sensitive silicon Schottky surface photodiode with the window removed.
Stellar photometric data for six different photocathode materials and the silicon detector
Stellar photometric data for six photocathode materials and silicon detector
The response of a 0.03-cm silicon detector to a mixed neutron and gamma field as a function of shield material and thickness
The neutron and gamma radiation from a MHW-RTG was used to evaluate the total response of a shielded 0.3-mm silicon detector. The generator employs a 2200 W(th) PuO2 heat source concept known as the HELIPAK. The total integrated neutron and gamma ray fluxes at 100 cm away from the source along the radial direction were 1.67 x 1,000 n/sq cm/s and 1.49 x 10,000 gamma sq cm/s, respectively. Experimental values of the response function of the shielded silicon detector were used to determine the total counting rates due to photons at bias energies ranging from 50 to 200 keV. For neutrons, analytically computed response functions were used to determine the total counting rates at the same bias energies. It was found that for an aluminum shield the neutrons are not significant, regardless of the thickness of the shield. However, the magnitude of the total counting rate due to neutrons increases with increased atomic number of the shield and becomes comparable to the counting rate due to photons for a platinum shield thickness of 5 cm.
Fluctuations of energy loss by charged particles in silicon detectors
Fluctuations of energy loss by charged particles in lithium-drifted silicon semiconductor detectors
Silicon detector measurements of energy deposition in aluminum by monoenergetic electrons
Silicon detector measurements of energy deposition in aluminum by monoenergetic electrons
Stellar photometric data for six different photocathode materials and the silicon detector.
Photodetector responses to radiant energy from many stars tabulated for various photocathode materials and silicon detector
The response of covered silicon detectors to monoenergetic gamma rays
Measurements were made of the efficiency in detecting gamma rays of a 0.3-mm, a 3-mm, and a 5-mm silicon detector covered with different absorbers. Calibrated sources covering the range from 279 KeV to 2.75 MeV were used. The need for the absorbers in order to obtain meaningful results, and their contribution to detector response at electron biases from 50 to 200 KeV, are discussed in detail. It is shown that the results are independent of the atomic number of the absorber. In addition, the role of the absorber in increasing the efficiency with increasing photon energy for low bias setting is demonstrated for the 0.3-mm crystal. Qualitative explanations are given for the shapes of all curves of efficiency versus energy at each bias.
The response of covered silicon detectors to monoenergetic gamma rays.
Measurements have been made of the efficiency in detecting gamma rays of a 0.3-mm-, 3-mm-, and 5-mm-thick silicon detector covered with different absorbers. Calibrated sources over the range from 279 keV to 2.75 MeV were used. The need for the absorbers to obtain meaningful results and their contribution to the response of the detectors at electron biases from 50 to 200 keV are discussed in detail. It is shown that the results are virtually independent of the atomic number of the absorber. In addition, the role of the absorber in increasing the efficiency with increasing photon energy for low bias settings is demonstrated for the 0.3-mm crystal. Qualitative explanations are given for the shapes of all curves of efficiency versus energy at each bias.