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Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

Mckinney, K.↗

Space environmental effects on spacecraft thermal control coatings

A large portion of the space based applications in the near future are for low Earth orbit (LEO) including the Space Station Freedom (SSF). The lifetime needs for materials on the SSF is 30 years. Materials must be selected which can withstand the deleterious effects of LEO. Environmental effects in the LEO include atomic oxygen, UV, ionizing radiation, and hypervelocity impact. These effects can adversely affect the surface properties of materials. This is particularly critical in the case of thermal control materials where the efficiency of the thermal control is dependent on the stability of the surface properties. The current baseline thermal coating for the SSF radiators is Ag Teflon. The surface property requirements for the coatings are a solar absorptance of 0.2 and an infrared emittance of 0.8. The effects of atomic oxygen and UV radiation on the baseline coating and several other candidate thermal control materials were studied. The thermal control radiator materials included Ag and Al backed Teflon, H2SO4 anodized Al, sputter deposited SiO2 on Al, and Ag and Al backed polychloro trifluoroethylene. The simulation of several of the LEO environment constituents provided a data base to aid in the selection of the radiator thermal control material to meet the life requirements of the SSF. The effects are illustrated of the environment on thermal control coatings and the importance of this factor in the selection process for long life spacecraft materials.

Bartosik, L. G.↗

Magma Electrolysis: An update

Electrolytic extraction of O2 from molten lunar soil is conceptually simple and thus a candidate process for producing O2 on the Moon. Possible container and electrode materials are being tested for durability in corrosive high-temperature silicate melts and looking for complications that might increase energy requirements. Gaseous oxygen is being produced by electrolysis of 1-2 gram quantities of silicate melts in spinel (MgAl2O4) crucibles; in these melts, spinel is a stable phase. The concentration of FeO was kept low because FeO decrease O2 production efficiency. Platinum electrodes were placed about 0.5 cm apart in the melt. The spinel crucible was still intact after 40 minutes of electrolysis, when the experiment was halted for examination. The Pt anode was also intact; its Pt was maintained in a dynamci state in which the anode was continuously oxidized but quickly reduced again by the silicate melt, inhibiting migration of Pt away from the anode. In melts with low concentrations of Al2O3 + SiO2 (2 wt percent), the energy of resistance heating was only approximately equal to 10 to 20 percent of the theoretical amount required to produce O2. In melts substantially more concentrated in Al2O3 + SiO2, higher melt viscosity resulted in frothing that, in the worst case, caused high enough melt resistivities to raise the energy requirements to nearly 10 times theoretical. Both Fe and Si are produced at the cathode; in iron-rich melts, a- and c-iron and molten ferrosilicon were observed. Production was also observed at the cathode of a previously unrecognized gas; which is not yet identified. The solubility of metallic species was measured in silicate melts. They are too low to reduce significantly the efficiency of O2 production.

Colson, Russell O.↗

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Borrego, J. M.↗

Solid-State High-Temperature Power Cells

All-solid-state electrochemical power cells have been fabricated and tested in a continuing effort to develop batteries for instruments for use in environments as hot as 500 C. Batteries of this type are needed for exploration of Venus, and could be used on Earth for such applications as measuring physical and chemical conditions in geothermal and oil wells, processing furnaces, and combustion engines. In the state-of-the-art predecessors of the present solid-state power cells, fully packaged molten eutectic salts are used as electrolytes. The molten-salt-based cells can be susceptible to significant amounts of self-discharge and corrosion when used for extended times at elevated temperatures. In contrast, all-solid-state cells such as the present ones are expected to be capable of operating for many days at temperatures up to 500 C, without significant self-discharge. The solid-state cell described here includes a cathode made of FeS2, an electrolyte consisting of a crystalline solid solution of equimolar amounts of Li3PO4 and Li4SiO4, and an anode made of an alloy of Li and Si (see figure). The starting material for making the solid electrolyte is a stoichiometric mixture of Li3PO4, SiO2, and Li3CO2. This mixture is ball-milled, then calcined for two hours at a temperature of 1,100 C, then placed in a die atop the cathode material. Next, the layers in the die are squeezed together at a pressure between 60 and 120 MPa for one hour at a temperature of 600 C to form a unitary structure comprising the solid electrolyte and cathode bonded together. Finally, the lithium-alloy anode is pressure-bonded to the solid electrolyte layer, using an intermediate layer of pure lithium. In one test of a cell of this type, a discharge rate of about 1 mA per gram of cathode material was sustained for 72 hours at a temperature of about 460 C. This is about three times the discharge rate required to support some of the longer duration Venus-exploration mission scenarios.

Whitacre, Jay↗

Coatings in space environment

The behavior in space environment of evaporated Al uncoated and coated with reactively deposited silicon oxide (SiOx), electron beam evaporated SiO2 and Al2O3, and Al and Ag coated with double layers of Al2O3 + SiOx is compared with metallized Teflon and Kapton, anodized Al (Alzak), and white paints. Flight data from three calorimetric experiments and one reflectometer flown in different orbital environments are compared with laboratory test data. The results demonstrate that evaporated thin films are extremely versatile and stable coatings for space applications. Through the use of control samples studied in different laboratory tests and monitored for up to 12,000 hours of solar exposure in different orbits, a classification of orbital severity and an estimate of laboratory simulation accuracy is obtained.

Triolo, J. J.↗

Ellipsometric studies of sputtered silicon nitride on n-GaAs

Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.

Peng, Y. K.↗