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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Modeling and Mitigation of dv/dt and Transmission Line Effect for Motor Drive System in Electric Aircraft Propulsion

Due to constraints in space and structure as well as other practical limitations in aircraft system, the motor controller or electric motor are often installed far away from each other and interconnected via long cables. This amplifies the transmission line effect excited by the dv/dt PWM voltage and induces high voltage stress on the machine winding. This paper investigates the state-of-art modeling approaches for such systems, identifies several limitations in matching the tested voltage reflection waveform in terms of peak voltage, oscillation frequency and damping speed, and offers several key considerations not well covered in literature or in engineering practice. It then proposes a practical modeling methodology which, as validated by experimental results, truly captures these critical reflection voltage specs. To mitigate the high peak voltage and strong oscillation, dv/dt filter is applied and a parametric design optimization based on widely adopted LC-R topology is illustrated, which not only alleviates the voltage stress but also minimized the power loss of the passive damping resistor.

Inductor↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗

Hard Fault Protection for a Silicon Carbide-Based Aerospace Motor Drive

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to protect these devices from overcurrent during low-inductance fault events. The use of an air core Rogowski coil topology was explored to see if it could mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-tophase fault, tested up to DC link voltages of 1 kV.

High Voltage↗

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Performance of The Far Ultraviolet Spectroscopic Explorer Mirror Assemblies

The Far Ultraviolet Spectroscopic Explorer is a NASA astrophysics satellite which produces high-resolution spectra in the far-ultraviolet (90.5-118.7 nm bandpass) using a high effective area and low background detectors. The observatory was launched on its three-year mission from Cape Canaveral Air Station on 24 June 1999. The instrument contains four coaligned, normal incidence, off-axis parabolic mirrors which illuminate separate Rowland circle spectrograph channels equipped with holographically ruled diffraction gratings and delay line microchannel plate detectors. The telescope mirrors have a 352 x 387 mm aperture and 2245 mm focal length and are attached to actuator assemblies, which provide on-orbit, tip, tilt, and focus control. Two mirrors are coated with silicon carbide (SiC) and two are coated with lithium fluoride over aluminum (Al:LiF). We describe mirror assembly in-flight optical and mechanical performance. On-orbit measurements of the far-ultraviolet point spread function associated with each mirror are compared to expectations based on pre-flight laboratory measurements and modeling using the Optical Surface Analysis Code and surface metrology data. On-orbit imaging data indicate that the mirrors meet their instrument-level requirement of 50 percent and 95 percent slit transmission for the high- and mid-resolution spectrograph entrance slits, respectively. The degradation of mirror reflectivity during satellite integration and test is also discussed. The far-ultraviolet reflectivity of the SiC- and AlLiF-coated mirrors decreased about six percent and three percent, respectively, between coating and launch. Each mirror is equipped with three actuators, which consist of a stepper motor driving a ball screw via a two-stage planetary gear train. We also discuss the mechanical performance of the mirror assemblies, including actuator performance and thermal effects.

Ohi, Raymond G.↗

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗