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At least 19 records

A Comprehensive Approach towards Multi-Objective EMI Filter Design Optimization in High-Frequency SiC-Based Motor Drives

With rapid penetration of high-frequency, highdensity power electronics into the industry, controlling the system generated EMI becomes one of the major design challenges. Designing practical optimized EMI filters require simultaneous consideration of multiple aspects - including electromagnetic couplings, magnetic materials, practical component parasitics and their impacts at high-frequencies, and also the overall manufacturing costs. The multi-dimensional nature of the problem often results in overcompensated designs that hurt the system efficiency and power density. This paper focuses on a comprehensive design platform (developed in MATLAB) towards designing high-density, optimized, highly efficient EMI filters by analyzing the generated noise spectrum and evaluating a vast array of potential solutions before outputting an optimized filter solution. The proposed tool includes database-based component selection, optimal topology selection, multistage filter design, overall optimization for volume, mass, cost and total loss. The proposed filter has been thoroughly evaluated in a PSIM simulation environment emulating the hardware in CRD300DA12EXM3, a 300kW three-phase inverter from Wolfspeed with an RL load representing a motor drive application. Furthermore, a 20kHz switching frequency is chosen and impacts of the motor high-frequency characteristics on the generated EMI noise spectrum of the overall system have been analyzed.

42 ENGINEERING↗

Modeling and Mitigation of dv/dt and Transmission Line Effect for Motor Drive System in Electric Aircraft Propulsion

Due to constraints in space and structure as well as other practical limitations in aircraft system, the motor controller or electric motor are often installed far away from each other and interconnected via long cables. This amplifies the transmission line effect excited by the dv/dt PWM voltage and induces high voltage stress on the machine winding. This paper investigates the state-of-art modeling approaches for such systems, identifies several limitations in matching the tested voltage reflection waveform in terms of peak voltage, oscillation frequency and damping speed, and offers several key considerations not well covered in literature or in engineering practice. It then proposes a practical modeling methodology which, as validated by experimental results, truly captures these critical reflection voltage specs. To mitigate the high peak voltage and strong oscillation, dv/dt filter is applied and a parametric design optimization based on widely adopted LC-R topology is illustrated, which not only alleviates the voltage stress but also minimized the power loss of the passive damping resistor.

Inductor↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗

Integration Methods for High-Density Integrated Electric Drives (Final Technical Report)

The project goal was to research, design and fabricate high-power-density, high-performance SiC power electronic modules for motor drive inverters in electric vehicles (EVs) to enable the subsequent motor drive to achieve a power density of 100 kW/l. EVs use electric motors instead of internal combustion engines as the prime mover, and their core components are semiconductor-based power electronic modules. Efficient power electronic modules play a vital role in power conversion systems. The performance of power modules directly affects the energy efficiency and overall performance of electric vehicles. Therefore, it is particularly important to develop power modules with high power density and high electrical performance that will perform reliably under EV environmental conditions. To achieve these goals, advanced electronic packaging technologies are required. This report describes a 5-year effort to integrate key aspects surrounding the basic power devices into the module itself to increase power density. These include sensing and sensing readout circuits, gate driver circuits, and two-sided cooling solutions.

33 ADVANCED PROPULSION SYSTEMS↗

Fully Integrated High Speed Megawatt Class Motor and High Frequency Variable Speed Drive System

This project involved developing a fully integrated high speed megawatt class motor and high frequency variable speed drive system that serve as a commercially viable and technically sound methodology for high speed industrial system applications. The project team organizations consist of Clemson University and TECO Westinghouse Motor Company (TWMC) formed an academic and industrial collaboration that combines the design, analysis, manufacturing and testing experience required for a large research project of this magnitude. The project resulted in an integrated high speed megawatt class medium voltage motor drive system that is at a TRL 6 with a clear path for commercialization. The fully integrated prototype system has been manufactured by TWMC in its Round Rock, Texas facility and tested at full power on a dynamometer at the Clemson University’s eGRID Center in North Charleston, South Carolina.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

current commutation, current source inverter, powe↗

Mild hybridisation of turboprop engine with high-power-density integrated electric drives

Here this paper shares with the aerospace community a case study of turboprop mild hybridisation using a recently developed integrated drive system in the University of Nottingham, UK, within the ACHIEVE project under EU H2020 CleanSky 2 program (project No. 737814). The developed drive system enables green taxiing of a turboprop aircraft while on the ground with its engine off, and as an electrical generator when the turboprop is in the air. The entire system is designed to be able to integrate within the power auxiliary gear box (PAGB) of a turboprop aircraft. Some of the key features of the developed system include a high-speed permanent magnet machine (up to 14,200rpm) with dual three-phase design, SiC-based high power density (11.8kW/L for the power converter, 35.3kW/L and 7.2kW/kg for the machine active parts), integrated cooling design for high-temperature operation (>130°C ambient temperature), fault tolerance consideration with dual channel operation capabilities and sensorless control for entire operational conditions. This paper is giving an overview of the design process of the electrical machine, power converters, and its cooling of the entire drive. Numerical analysis (FEM and CFD) and some experimental results are presented to demonstrate the effectiveness and the desired performance of the developed integrated drive system.

42 ENGINEERING↗

Hard Fault Protection for a Silicon Carbide-Based Aerospace Motor Drive

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to protect these devices from overcurrent during low-inductance fault events. The use of an air core Rogowski coil topology was explored to see if it could mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-tophase fault, tested up to DC link voltages of 1 kV.

High Voltage↗

High power density compact drive integrated motor for electric transportation

This project, initially part of OPEN 2018, and subsequently the ASCEND effort, targeted demonstration of significant enhancements in internal permanent magnet (IPM) motor torque and power density for current and future ground and air electric transportation applications. These were achieved through: (1) embedded two-phase system thermal management, (2) coupled, multi-scale electrical-electromagnetic-thermal-mechanical co-design and optimization, (3) size and weight reduction of motor and drive electronics through elimination of redundant cooling and coupling hardware, and (4) higher efficiency operation of SiC wide bandgap power electronics packaging through high temperature operation (200 oC). The proposed approach utilizes a single dielectric coolant for closed loop two-phase thermal management, and a combined heat rejection unit for the IPM and drive. Wick assisted liquid delivery for evaporative thermal management is utilized for the motor, and the drive electronics utilize the same coolant in flow boiling within the cold plate structures. Through the use of three-dimensional packaging for SiC, and novel drive topologies with reduced switching losses, significant increases in power density and compactness were targeted.

33 ADVANCED PROPULSION SYSTEMS↗

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

Medium Voltage Integrated Drive and Motor

The objective of this program was to design, build, and test a medium voltage (4,160VAC) high speed permanent magnet machine (HSPMM) and variable speed drive (VSD) that incorporates next generation 10kV silicon carbide (SiC) modules. The use of a HSPMM allows for high efficiency, small footprint, maintenance free operation while the SiC modules enable higher voltage operating conditions, improved efficiency, and small footprint.

30 DIRECT ENERGY CONVERSION↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Performance of The Far Ultraviolet Spectroscopic Explorer Mirror Assemblies

The Far Ultraviolet Spectroscopic Explorer is a NASA astrophysics satellite which produces high-resolution spectra in the far-ultraviolet (90.5-118.7 nm bandpass) using a high effective area and low background detectors. The observatory was launched on its three-year mission from Cape Canaveral Air Station on 24 June 1999. The instrument contains four coaligned, normal incidence, off-axis parabolic mirrors which illuminate separate Rowland circle spectrograph channels equipped with holographically ruled diffraction gratings and delay line microchannel plate detectors. The telescope mirrors have a 352 x 387 mm aperture and 2245 mm focal length and are attached to actuator assemblies, which provide on-orbit, tip, tilt, and focus control. Two mirrors are coated with silicon carbide (SiC) and two are coated with lithium fluoride over aluminum (Al:LiF). We describe mirror assembly in-flight optical and mechanical performance. On-orbit measurements of the far-ultraviolet point spread function associated with each mirror are compared to expectations based on pre-flight laboratory measurements and modeling using the Optical Surface Analysis Code and surface metrology data. On-orbit imaging data indicate that the mirrors meet their instrument-level requirement of 50 percent and 95 percent slit transmission for the high- and mid-resolution spectrograph entrance slits, respectively. The degradation of mirror reflectivity during satellite integration and test is also discussed. The far-ultraviolet reflectivity of the SiC- and AlLiF-coated mirrors decreased about six percent and three percent, respectively, between coating and launch. Each mirror is equipped with three actuators, which consist of a stepper motor driving a ball screw via a two-stage planetary gear train. We also discuss the mechanical performance of the mirror assemblies, including actuator performance and thermal effects.

Ohi, Raymond G.↗

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗