SEARCH · Engineering Papers

Results for “Si-W”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

6 records

All sources NASA NTRS DOE OSTI

NASA NTRS1984

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗

DOE OSTI2020

Materials Data on Si2W by Materials Project

WSi2 crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. W is bonded in a distorted q6 geometry to ten equivalent Si atoms. There are eight shorter (2.63 Å) and two longer (2.64 Å) W–Si bond lengths. Si is bonded in a 10-coordinate geometry to five equivalent W and five equivalent Si atoms. There are one shorter (2.60 Å) and four longer (2.65 Å) Si–Si bond lengths.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on SiW3 by Materials Project

W3Si is High-temperature superconductor structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. W is bonded to four equivalent W and two equivalent Si atoms to form distorted WSi2W4 octahedra that share corners with six equivalent WSi2W4 octahedra, edges with four equivalent SiW6 octahedra, and edges with eight equivalent WSi2W4 octahedra. The corner-sharing octahedral tilt angles are 0°. All W–W bond lengths are 2.61 Å. Both W–Si bond lengths are 2.61 Å. Si is bonded to six equivalent W atoms to form SiW6 octahedra that share corners with six equivalent SiW6 octahedra and edges with twelve equivalent WSi2W4 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on Si2W by Materials Project

WSi2 is Titanium Disilicide-like structured and crystallizes in the hexagonal P6_222 space group. The structure is three-dimensional. W is bonded in a distorted q6 geometry to ten equivalent Si atoms. There are a spread of W–Si bond distances ranging from 2.59–2.69 Å. Si is bonded in a 10-coordinate geometry to five equivalent W and five equivalent Si atoms. There are a spread of Si–Si bond distances ranging from 2.57–2.69 Å.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on Si3W by Materials Project

WSi3 crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. W4+ is bonded to twelve equivalent Si+1.33- atoms to form a mixture of face and corner-sharing WSi12 cuboctahedra. There are six shorter (2.63 Å) and six longer (2.79 Å) W–Si bond lengths. Si+1.33- is bonded in a 12-coordinate geometry to four equivalent W4+ and eight equivalent Si+1.33- atoms. There are a spread of Si–Si bond distances ranging from 2.47–2.89 Å.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on Si2W3 by Materials Project

W3Si2 crystallizes in the tetragonal P4/mbm space group. The structure is three-dimensional. there are two inequivalent W+2.67+ sites. In the first W+2.67+ site, W+2.67+ is bonded in a square co-planar geometry to four equivalent Si4- atoms. All W–Si bond lengths are 2.58 Å. In the second W+2.67+ site, W+2.67+ is bonded to six equivalent Si4- atoms to form a mixture of distorted face, edge, and corner-sharing WSi6 pentagonal pyramids. There are two shorter (2.55 Å) and four longer (2.57 Å) W–Si bond lengths. Si4- is bonded in a 9-coordinate geometry to eight W+2.67+ and one Si4- atom. The Si–Si bond length is 2.51 Å.

36 MATERIALS SCIENCE↗