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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Facet effects on generation-recombination currents in semiconductor laser diodes

The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. Here the results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Electron-beam–controlled deflection of near-infrared laser in semiconductor plasma

A timing method for experiments on the interaction of a near-infrared laser and an ultra-relativistic electron beam via a semiconductor plasma switch is experimentally validated. As an intermediate medium, a thin Si plate is excited by the energetic, intense electron beam to produce a semiconductor plasma, which in turn deflects counter-colliding laser light having 1 μm wavelength. An electron beam of sub-nC charge sufficiently induces the needed electron number density gradient of 1×10 20 cm -3 per tens of μm length at the interaction point. Demonstration during an inverse Compton scattering experiment by a counter-colliding electron beam of 300 pC and 70 MeV with an Nd: YAG laser at a wavelength of 1 μm is reported here.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Beam combining of high-power terahertz lasers with semiconductor metasurface gratings

Spectral beam combining (SBC) of an array of single-mode lasers has the potential for realizing a chip-scale electrically tunable multispectral laser source without any moving parts and with emission at closely spaced discrete frequencies. Here, we demonstrate SBC of an array of single-mode THz quantum-cascade lasers (QCLs) with small frequency spacing. Semiconductor-based metasurface THz blazed gratings are developed for integration with QCLs in a compact cryocooler setup. Single-lobed beams of four QCLs emitting around 3.2 THz and spectrally separated by ~14 GHz are combined to achieve collinear propagation of spatially overlapped and collimated beams in the far field with ≲ 0.1° of pointing error. Peak optical power in the range 50–100 mW is detected from each of the QCLs after combining. The dense frequency spacing in our method provides a pathway to incorporate tens of QCLs on a chip to realize a high-power discretely tunable THz laser source for applications in THz spectroscopy.

Jia, Fei [Lehigh Univ., Bethlehem, PA (United Stat↗
DOE OSTI2025

Photonics Breakthroughs 2024: Narrow-Linewidth Lasers in the Visible and Near-Infrared

Narrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated semiconductor lasers, mostly in the telecom wavelength range. In recent years, the demand for high-performance lasers at shorter wavelengths skyrocketed, driven by applications in sensing and atom trapping. Low-noise lasers are of particular importance in this spectral range, as they are essential for optical clocks. Here, we will review recent progress in narrow-linewidth lasers at shorter wavelengths, present results on a hybrid-integrated low-noise laser at 780 nm and discuss the perspectives and challenges of high-performance semiconductor lasers in the visible and near-infrared.

Prokoshin, Artem [King Abdullah University of Scie↗
DOE OSTI2023

Colloidal Semiconductor Nanocrystal Lasers and Laser Diodes

Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Using Disorder to Overcome Disorder: A Mechanism for Frequency and Phase Synchronization of Diode Laser Arrays

Noise and disorder are known, in certain circumstances and for certain systems, to improve the level of coherence over that of the noise-free system. Examples include cases in which disorder enhances response to periodic signals, and those where it suppresses chaotic behavior. We report a new type of disorder-enhancing mechanism, observed in a model that describes the dynamics of external cavity-coupled semiconductor laser arrays, where disorder of one type mitigates (and overcomes) the desynchronization effects due to a different disorder source. Here, we demonstrate stabilization of dynamical states due to frequency locking and subsequently frequency locking-induced phase locking. Here, we have reduced the equations to a potential model that illustrates the mechanism behind the misalignment-induced frequency and phase synchronization.

42 ENGINEERING↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Probing the ultrafast gain and refractive index dynamics of a VECSEL

Typically, strong gain saturation and gain dynamics play a crucial role in semiconductor laser mode-locking. While there have been several investigations of the ultrafast gain dynamics in vertical-external-cavity surface-emitting lasers (VECSELs), little is known about the associated refractive index changes. Yet, such refractive index changes do not only have a profound impact on the pulse formation process leading to self-phase modulation, which needs to be compensated by dispersion, but they are also of particular relevance for assessing the feasibility of Kerr-lens mode-locking of VECSELs. Here, we measure both refractive index as well as gain dynamics of a VECSEL chip using the ultrafast beam deflection method. We find that, in contrast to the gain dynamics, the refractive index dynamics is dominated by an instantaneous (100 fs) and a very slow component (100 ps). The time-resolved measurement of nonlinear refraction allows us to predict a pulse-length dependent, effective nonlinear refractive index n 2,eff , which is shown to be negative and on the order of 10 -16 m 2 =W for short pulse lengths (100 fs). It becomes positive for large excitation fluences and large pulse lengths (few ps). These results agree with some previous reports of self-mode-locked VECSELs for which the cavity design and pulse properties determine sign and strength of the nonlinear refractive index when assuming Kerr-lens mode-locking.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

Abstract This article describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to the approach are a) description of the multi‐element laser cavity in terms of composite laser/free‐space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum‐optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum‐dot laser coupled to a high‐ SiN cavity.

42 ENGINEERING↗
DOE OSTI2025

Impulse Response Functions for Characterizing Pulse-to-Pulse Junction Temperature Behavior in Laser Diode Pulse Trains

A method is proposed for determination of the pulse-to-pulse variation in junction temperature and emission wavelength of a semiconductor laser diode during a train of pulses. Here, this approach, based on impulse response functions, enables predictions for pulse trains with arbitrary pulse-to-pulse variations in output power, pulse width, and pulse delay using a limited set of experimental characterization data. The use of this approach is illustrated by application to a particular device structure.

Deri, Robert J. [Lawrence Livermore National Labor↗
DOE OSTI2022

36 Hz integral linewidth laser based on a photonic integrated 4.0 m coil resonator

Laser stabilization sits at the heart of many precision scientific experiments and applications, including quantum information science, metrology, and atomic timekeeping. Many of these systems narrow the laser linewidth and stabilize the carrier by use of Pound–Drever–Hall (PDH) locking to a table-scale, ultrahigh quality factor (Q), vacuum spaced Fabry–Perot reference cavity. Integrating these cavities to bring characteristics of PDH stabilization to the chip scale is critical to reducing their size, cost, and weight, and enabling a wide range of portable and system-on-chip applications. We report a significant advance in integrated laser linewidth narrowing, stabilization, and noise reduction by use of a photonic integrated 4.0 m long coil resonator to stabilize a semiconductor laser. We achieve a 36 Hz 1 / π <#comment/> -integral linewidth, Allan deviation of 1.8 × <#comment/> 10 − <#comment/> 13 at 10 ms measurement time, and a 2.3 kHz/s drift—to the best of our knowledge, the lowest integral linewidth and highest stability demonstrated for an integrated waveguide reference cavity. This performance represents over an order of magnitude improvement in integral linewidth and frequency noise over previous integrated waveguide PDH stabilized reference cavities and bulk-optic and integrated injection locked approaches, and over two orders of magnitude improvement in frequency and phase noise than integrated injection locked approaches. Two different wavelength coil designs are demonstrated, stabilizing lasers at 1550 nm and 1319 nm. The resonator is bus-coupled to a 4.0 m long coil, with a 49 MHz free spectral range, mode volume of 1.0 × <#comment/> 10 10 µ <#comment/> m 3 , and 142 million intrinsic Q , fabricated in a CMOS compatible, ultralow loss silicon nitride waveguide platform. Our measurements and simulations show that the thermorefractive noise floor for this particular cavity is reached for frequencies down to 20 Hz in an ambient environment with simple passive vibration isolation and without vacuum or thermal isolation. The thermorefractive noise limited performance is estimated to yield an 8 Hz 1 / π <#comment/> -integral linewidth and Allan deviation of 5 × <#comment/> 10 − <#comment/> 14 at 10 ms, opening a stability regime that heretofore has been available only in fundamentally non-integrated systems. These results demonstrate the potential to bring the characteristics of laboratory-scale stabilized lasers to the integrated, wafer-scale compatible chip scale, and are of interest for a number of applications in quantum technologies and atomic, molecular, and optical physics, and with further developments below 10 Hz linewidth, can be highly relevant to ultralow noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗
DOE OSTI2022

Atomic Force Microscope Active Optical Probe for Single-Molecule Imaging and Time-Resolved Optical Spectroscopy (DOE SBIR Phase II/IIA Final Report)

Actoprobe LLC reports on the results of its DOE SBIR Phase II/IIA project on the development of Atomic Force Microscope Active Optical Probe for Single-Molecule Imaging and Time-Resolved Optical Spectroscopy. While chemistry science and technology greatly benefit from Atomic Force Microscopy in surface characterization, time-resolved chemical imaging on the single-molecule level lags far behind. Current scanning probe microscopy only obtains information about mechanical but not optical/chemical properties. To address this problem, the Actoprobe LLC research team has proposed a novel class of Atomic Force Microscopy probes, Ultra-Fast Pulsed Active Atomic Force Microscopy Optical Probes (UFP AAOPs), that will allow ultrafast time-resolved optical and chemical imaging at the nanoscale. As envisioned, these unique optical probes will perform the functions of conventional Atomic Force Microscopy probes and, in addition, will simultaneously provide chemical information about molecular scale interactions. This innovation is accomplished by integrating an ultrafast pulsed Quantum Dot laser source into an Atomic Force Microscopy probe. This report describes our progress with the fabrication of an ultrafast micrometer-size semiconductor laser, based on “artificial atoms” - Quantum Dots, integrated with an Atomic Force Microscopy probe. In this Phase II/IIA project, we have demonstrated the feasibility of the UFP AAOP concept by fabricating a first prototype of the UFP AAOP. The excellent performance of the probe has been proven in terms of AFM and optical spatial resolution through rigorous tests. The UFP AAOP provides pulses with less than 4 ps duration and higher than 11 GHz repetition rate, and spatial resolution better than 300 nm at 1240 nm wavelength. Technically, it is possible to reduce the pulse width to less than 1 ps and to improve lateral resolution to ~ 0.5 nm, which implies the potential capability for the probe to characterize chemical compounds with single-molecule resolution. The UFP AAOP fabrication procedure has been developed for wafer-scale production of multiple devices, with the yield of the process estimated to be lower than 1% with the limited fabrication capabilities and equipment available for use in the research project. However, using high-volume production tools and special GaAs processing equipment, the yield can be significantly improved, theoretically to ~ 50%. Finally, economic feasibility and scale-up manufacturing potential were analyzed for UFP AAOP and found to be very promising. In summary, the Actoprobe team has successfully demonstrated the feasibility of the UFP AAOP concept.

36 MATERIALS SCIENCE↗