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Results for “Semiconductor Reliability Testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Semiconductor Reliability Testing Data Management

iT2 Technologies is a startup developing analytical software and creating automated workflow environment in the area of big data in IC reliability. The main beneficiaries of the iT2 software will be the semiconductor companies as they will see significant savings in terms of time and cost. They will be able to efficiently perform the analysis of large amount of reliability data. A better standard of reliability and quality will also lead to the improvement in public safety in consumer, automotive, medical, and military applications. Smarter and thorough testing will reduce the risk of faulty hardware getting into the hands of the end users. The software is being developed and designed within the United States and will help keep the prominence of US in the cutting edge of high tech space. iT2 is establishing strong relations with its potential customers thanks to its key players being involved in this industry for the past several years and, thus, having a deep understanding of the market. The target clients will be all major semiconductor suppliers such as Intel, Qualcomm, Texas Instruments, OnSemi, and Broadcom and their customers including Apple, Cisco, IBM, HP, and Dell. The iT2 software will be used in a business-to-business environment for sharing engineering data and communicating results between these two classes of customers - some of which are participating in the beta testing of the iT2 software.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2018

Impact of Accelerated StressTests on SiC MOSFET Precursor Parameters: Preprint

Incorporating SiC power MOSFETs is very attractive for advancing power electronic system performance, yet the system reliability with new devices remains in question. This work presents an overview of accelerated lifetime tests and the packaging and semiconductor failure mechanisms they excite. The experiments explained here includes High Temperature Gate Bias (HTGB), Switching Cycling, Power Cycling, and Thermal Cycling. These experiments stress different failure mechanisms, that show degradation in different device parameters including, but not limited to, threshold voltage and on-resistance. These four experiments help illustrate the spectrum between device and package degradation that can be used to design more reliable power electronic circuits.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2018

Impact of Accelerated Stress-Tests on SiC MOSFET Precursor Parameters

Integrating SiC power MOSFETs is very attractive for advancing power electronic system performance, yet the system reliability with new devices remains in question. This work presents an overview of accelerated lifetime tests and the packaging and semiconductor failure mechanisms they excite. The experiments explained here includes High Temperature Gate Bias (HTGB), Switching Cycling, Power Cycling, and Thermal Cycling. These experiments stress different failure mechanisms, that show degradation in different device parameters including, but not limited to, threshold voltage and on-resistance. These four experiments help illustrate the spectrum between device and package degradation that can be used to design more reliable power electronic circuits.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2018

Trends in SiC MOSFET Threshold Voltage and ON-Resistance Measurements from Thermal Cycling and Electrical Switching Stresses: Preprint

Integrating SiC power MOSFETs is very attractive for advancing power electronic systems, yet the system reliability with new devices remains in question. This work presents two accelerated test experiments to further investigate the packaging and semiconductor failures of a TO-247 SiC MOSFET. First, a variation on power cycling experiments -- switching cycling -- is introduced. Traditional power cycling experiments utilize conduction losses to self-heat the device where a large temperature swing causes degradation at the packaging level. However, by decreasing the on-time such that the device only turns on and immediately turns off, the temperature swing is decreased and the semiconductor itself is degraded. This work shows experimental device degradation caused by continuous switching events - switching cycling, at 90% of the device's breakdown voltage. Second, thermal cycling experiments were conducted between -40 degrees C and 175 degrees C to observe degradation in the mechanical packaging of the device. Experimentally-measured changes in threshold voltage and ON-resistance are recorded in both experiments and compared. These results also illustrate the spectrum between device and package degradation from accelerated test methods.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Radiative capture rates at deep defects from electronic structure calculations

We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:VGa-TeAs and GaN:CN, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Material Needs and Measurement Challenges for Advanced Semiconductor Packaging: Understanding the Soft Side of Science

This Perspective builds upon insights from the National Institute of Standards and Technology (NIST)-organized workshop, “Materials and Metrology Needs for Advanced Semiconductor Packaging Strategies,” held at the 35th annual Electronics Packaging Symposium in Binghamton, NY, on September 5, 2024. It outlines critical challenges and opportunities related to polymer-based “soft” materials in advanced semiconductor packaging, with emphasis on polymer science, measurement science (metrology), and the strategic development of Research-Grade Test Materials (RGTMs). These efforts, led by the NIST CHIPS team, aim to advance the fundamental understanding of structure-property-processing relationships, promote standardized guidelines and innovative methods for material characterization, and accelerate the development, qualification, and adoption of next-generation packaging materials. The Perspective also distills key insights from the panel discussion with industry experts, emphasizing the need for close collaboration among materials scientists, process engineers, and metrology experts to enable a holistic strategy, further highlighting the importance of cross-sector partnerships among industry, academia, and government to address pressing challenges in packaging materials and processes.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Electric Drive Technologies Research: ELT223 Component Modeling, Co-Optimization, and Trade-Space Evaluation Annual Report

This project is intended to support the development of new traction drive systems that meet the targets of 100 kW/L for power electronics and 50 kW/L for electric machines with reliable operation to 300,000 miles. To meet these goals, new designs must be identified that make use of state-of-the-art and next-generation electronic materials and design methods. Designs must exploit synergies between components, for example converters designed for high-frequency switching using wide band gap (WBG) devices and ceramic capacitors. This project included: (1) a survey of available technologies; (2) investigating new technologies, that for example, reduce volume of thermal management or magnetic components; (3) the development of computer aided design tools that consider the converter volume, reliability, and electrical performance; (4) exercising the design software to evaluate performance gaps and predict the impact of certain technologies and design approaches, i.e. GaN semiconductors, ceramic capacitors, ceramic thermal management components, and select topologies; (5) building and testing hardware prototypes to validate models and concepts. The design tools enable co-optimization of the power module and passive elements and provide some design guidance. At the end of the project, new advanced computing methods, such as machine learning approaches, were considered.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Brittle-to-Ductile Transition Temperature Decreases at the Microscale in Muscovite Mica

Characterizing the structural and chemical transitions of muscovite mica across various scales and thermal profiles is essential for ensuring the reliability of high-voltage power insulation, aerospace thermal barriers, and nanoscale semiconductor substrates under extreme operational stress. Here, we investigate notch fracture toughness $K^{n}_{Ic}$ of muscovite mica as a function of feature size w and temperature T with microscale shear testing. $K^{n}_{Ic}$ decreased and then stayed constant as w increased, likely from fabrication-induced changes to the microstructure and roughness. Moreover, $K^{n}_{Ic}$ initially decreased and then increased as temperature T increased, with the reversal in trend indicative of a brittle-to-ductile transition. Complementary Raman spectroscopy and molecular dynamics showed that the observed trends were due to an increase in bond lengths and a decrease in critical stresses/strains. In comparing the microscale results to macroscale counterparts, it was surmised that the decrease in brittle-to-ductile transition temperature was due to an increase in the dehydroxylation rate.

DelRio, Frank W. [Sandia National Laboratories (SN↗
DOE OSTI2018

Metastability and reliability of CdTe solar cells

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. We believe it should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging and a closed solution that can treat the entire system and its interactions is required.

14 SOLAR ENERGY↗
DOE OSTI2025

An improved guess for the variational calculation of charge-transfer excitations in large systems

Ab initio quantum-chemical methods that perform well for computing the electronic ground state are not straightforwardly transferable to electronically excited states, particularly in large molecular systems. Wave function theory offers high accuracy, but is often prohibitively expensive. Methods based on time-dependent density functional theory (TD-DFT) are crucially sensitive to the chosen exchange-correlation functional (XCF) parameterization, and system-specific tuning protocols were therefore proposed to address the method's robustness. Methods based on the variational relaxation of the excited-state electron density showcased promising results for the calculation of charge-transfer excitations, but the complex shape of the electronic hypersurface makes convergence to a specific excited state much more difficult than for the ground state when standard variational techniques are applied. We address the latter aspect by providing suitable initial guesses, which we obtain by two separate constrained algorithms. Combined with the squared-gradient minimization algorithm for all-electrons relaxation in a freeze-and-release scheme (FRZ-SGM), we demonstrate that orbital-optimized density functional theory (OO-DFT) calculations can reliably converge to the charge-transfer states of interest even for large molecular systems. We test the FRZ-SGM method on a phenothiazine-anthraquinone CT excitation in a supramolecular Pd(II) coordination cage complex as a function of the cage conformation. This compound has been studied experimentally prior to our work. We compare this freeze-and-release scheme to two XCF reparameterizations, which were recently proposed as low-cost TD-DFT-based alternatives to variational methods. Two dye-semiconductor complexes, which were previously investigated in the context of photovoltaic applications, serve as a second example to investigate the convergence and stability of the FRZ-SGM approach. Our results demonstrate that FRZ-SGM provides reliable convergence for charge-transfer excited states and avoids variational collapse to lower-lying electronic states, whereas time-dependent DFT calculations with an adequate tuning procedure for the range-separation parameter provide a computationally efficient initial estimate of the corresponding energies, with a computational cost comparable to that of configuration-interaction singles (CIS) calculations.

Bogo, Nicola↗
DOE OSTI2019

Analysis of the Impact of Radiation on Cameras and Robotic Perception - 19242

Robotic systems are increasingly used for inspection, maintenance, and disaster assistance for nuclear power plants. These robots utilize increasingly high levels of autonomy to operate in environments that are unsafe for humans to operate the robot in or require more precise control over the robot than a human can offer. In these cases, the robot must include perception and computation components to autonomously sense and navigate through the environment to fulfill its mission. This difficult task is complicated by radiation interfering with sensors' operation. The impact of this interference is largely unexplored, as existing works on radiation interference on sensors focus on estimating the incident radiation, rather than how it impacts a robotic system using the sensor. In this work, we seek to quantify and describe the impact of radiation on cameras, and how the radiation affects robotic performance. In this paper we study cameras that are suitable for small, lightweight unmanned aerial vehicles (UAVs) that are increasingly deployed to fly in confined areas in emergencies, where the surrounding environment is unsafe for workers to operate. These small UAVs lack the payload capacity to carry significant radiation shielding, so any onboard sensors will be affected by radiation. In the case of cameras, this radiation appears as noise in the camera imagery. This noise will interfere with the UAV's operation, by obscuring obstacles and interfering with localization and optical flow algorithms that detect detailed features in the environment. To date, there is a lack of information on how the radiation noise in the camera image impacts the overall robot system performance Existing work focuses on estimating the amount of incident radiation by measuring the corruption in the images. However, these works suffer several shortcomings for robotic systems. First, a robot must be able to successfully navigate its environment during a successful mission, and merely quantifying the amount of radiation noise in an image does not adequately explain how it may interfere with higher level navigation and perception tasks. Second, radiation estimation procedures rely on focusing the camera on a known and static background. This is unsuitable for robotic exploration tasks, where the robot frequently moves around an unknown environment that may be dynamically changing. Our work contains two contributions that address these shortcomings. First, we conduct a detailed analysis of the noise radiation causes in cameras by exposing cameras that are commonly used on UAVs [e.g., small form factor complementary metal-oxide-semiconductor (CMOS) cameras] to varying levels of radiation that may be present in emergency scenarios. From this exposure, we quantify not only how much noise is present, but quantify its appearance. By quantifying the appearance and amount of noise in a camera image, researchers can design mitigation strategies for the corruption, so that their robotic systems can operate in these challenging environments. Second, we demonstrate how to leverage this experimental data in robotic simulations. Using data from the first set of experiments allows us to test and verify the robots in simulation. Using simulators allows us to verify the robots will perform as expected during critical times without needing expensive test equipment or damaging valuable robot prototypes. Other researchers using robots for exploration of irradiated environments will benefit from our research by incorporating similar noise models in their research. 1 Southwest Research Institute{sup R} is a registered trademark of Southwest Research Institute in the United States and/or other countries. This will increase the reliability of robotic systems prior to deployment in emergency situations, which will in turn increase their effectiveness and speed the development of robots that would otherwise need expensive and time-consuming test procedures to validate. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Benchmark Data Set of Crystalline Organic Semiconductors

This work reports a Benchmark Data set of Crystalline Organic Semiconductors to test calculations of the structural and electronic properties of these materials in the solid state. The data set contains 67 crystals consisting of mostly rigid molecules with a single dominant conformer, covering the majority of known structural types. The experimental crystal structure is available for the entire data set, whereas zero-temperature unit cell volume can be reliably estimated for a subset of 28 crystals. Using this subset, we benchmark r 2 SCAN-D3 and PBE-D3 density functionals. Then, for the entire data set, we benchmark approximate density functional theory (DFT) methods, including GFN1-xTB and DFTB3(3ob-3-1), with various dispersion corrections against r 2 SCAN-D3. Our results show that r 2 SCAN-D3 geometries are accurate within a few percent, which is comparable to the statistical uncertainty of experimental data at a fixed temperature, but the unit cell volume is systematically underestimated by 2% on average. The several times faster PBE-D3 provides an unbiased estimate of the volume for all systems except for molecules with highly polar bonds, for which the volume is substantially overestimated in correlation with the underestimation of atomic charges. Considered approximate DFT methods are orders of magnitude faster and provide qualitatively correct but overcompressed crystal structures unless the dispersion corrections are fitted by unit cell volume.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis

Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics stems from piracy of intellectual properties (IP) and counterfeiting, which causes significant revenue loss to the semiconductor manufacturers. Further, these components often lead to compromised functionality, reliability, security, and safety of an electronic system. This paper presents secure information transmission and probing methods for verifying the integrity of digital integrated circuit (ICs) based on their electromagnetic (EM) near-field emissions and thereby protecting systems against counterfeit components. The proposed method has been tested on both high-level instructions executed by microprocessors or Systems-on-Chip (serving as examples of software), and also logic circuits within FPGA fabrics and ASICs (serving as examples of hardware). The authentication information required by each digital system is generated using a pseudo-random number generator circuit and securely transmitted via near-field magnetic emissions. The authorized party can probe these emissions using a near-field probe, process the acquired signals to improve the signal-to-noise ratio (SNR), and then recover the secure information through matched filtering. Experimental results from commercial SoCs are used to demonstrate the proposed technique. Methods for reducing EM interference during integrity verification of both FPGAs and ASICs are also described.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Accelerated Scaling to Rapid Open-Air Fabrication of Durable Perovskite Solar Modules

The goals of this SETO project (DE-EE0008559, Accelerated Scaling to Rapid Open-Air Fabrication of Durable Perovskite Solar modules) are to address the principal challenges towards the successful commercialization of perovskite solar modules utilizing scalable, high-throughput open-air spray deposition. The successful outcome of the project will provide the foundation of an all open-air spray deposited perovskite solar module with hole transport layer (HTL), perovskite, electron transport layer (ETL), and barrier layer development while establishing a fundamental understanding of perovskite device behavior under accelerated aging conditions. Through this program, we have made significant progress towards a commercializable pathway for perovskites. (1) We’ve demonstrated the successful open-air deposition of perovskite and transport layer materials. These deposition methods were chosen for their inherent scalability, and open-air processing enables a significant reduction in processing costs. These methods are also compatible with high throughputs, demonstrating the fastest perovskite film deposition at these performance levels. (2) Development of a unique all-fiber laser scribing procedure provides a high-performance, low-cost method for further improvements in scalability. (3) Our group has also placed a unique emphasis on device stability. The development of testing standards for perovskite modules is required to thoroughly evaluate potential candidates for commercialization, and we’ve taken inspiration from current industry standards to provide an honest insight into the performance and reliability of our devices. (4) An extensive cost model detailing the specific contributions of each device layer and production component provides the most thorough evaluation of any perovskite technology against conventional silicon and compound semiconductor solar devices. The cost model is a critical advancement that will provide the foundation for evaluating the levelized cost of energy (LCOE) of this technology.

14 SOLAR ENERGY↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Electrification: 2023 Final Progress Report

This project proposes to develop a high-power density, high speed traction motor architecture called QMag, driven by a high-power density motor drive inverter using silicon carbide semiconductor devices. This new architecture will achieve the efficiency and power density targets by means of innovative winding and rotor structures, high bandwidth controls, and advanced thermal management solutions. The project team will pursue the goals of the project systematically, through Finite Element Analysis for machine design, through simulation and co-simulation techniques for power electronics and controls evaluation, and finally system design, fabrication, testing and evaluation. If this project successfully achieves and demonstrates the DOE targets for power density, cost, and reliability, the technology has the potential to become a core enabler of the flagship higher power product portfolio in commercial traction businesses, which has so far been confined to DC, induction, Brush Less DC (BLDC), Permanent Magnet AC (PMAC), and reluctance machines.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗