Resolution of semiconductor detectors for fission fragments.
Energy resolution of semiconductor detectors for fission fragments
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Energy resolution of semiconductor detectors for fission fragments
Nuclear semiconductor detector for charged- particle space spectrometry
Nuclear biomedicine semiconductor detectors for radioisotope detection in in-vivo and uptake studies
Medical and biological semiconductor detectors for manned space flight missions
Energy for electron-hole pair generation in silicon by protons using lithium drifted semiconductor detectors
Fluctuations and broadening of energy-loss spectrum of charged particles passing through semiconductor detectors
Atomic scattering contribution to pulse height defect and energy dispersion of heavy ions in semiconductor detectors
Electron irradiation effect on resolution of lithium-drifted silicon semiconductor detectors
Lithium drifted silicon semiconductor radiation detectors, proton absorption in metal, plastics, and tissue, and detector behavior
Semiconductor detector-dosimeter characteristics and application to problems of whole body dosimetry - Monte Carlo proton transport program
Preparation of lithium-drifted semiconductor nuclear particle detectors
Lithium drifted germanium and silicon semiconducting detectors compared with thallium activated sodium iodide crystal scintillation counter for gamma spectrometry
Theory, characteristics, and fabrication of lithium-drifted silicon detectors
Penetration and proton interaction with matter, including stopping power measurements and mean ionization potential values
Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.
A transistorized spectrometric amplifier with a shaper is reported that selects the shape of the frequency characteristic of the amplifying channel for which the primary frequency spectrum of the signal will pass, but where the noise spectrum is limited to the maximum. A procedure is presented for selecting the shaping circuits and their inclusion principles.
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