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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

A CW Gunn diode bistable switching element

A current-controlled bistable switching element using a CW Gunn diode is reported. Switching rates of the order of 10 MHz were obtained with modest circuits. Switching was initiated by current pulses of short duration (5 to 10 nsec). Rise times of the order of several nanoseconds could be obtained. The apparent mechanism which permits the bistable operation of the Gunn diode is the reduction in the mobility of the GaAs active layer due to heating of the device.

Hurtado, M.↗
NASA NTRS1972

A CW Gunn diode bistable switching element.

Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

Hurtado, M.↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗
NASA NTRS1974

Wide range multi-channel analog switch

A ten-channel analog switch has been developed as a sample and shape circuit for signals used as inputs to a logarithmic pulse height recording system. The circuit employs a field effect transistor as the switching element. Switching transients are reduced to approximately 2 mV by adding to the gated signal an inverted transient generated by an identical circuit with no signal applied. The circuit is linear to 2% from 3 mV to 10 V.

Levit, L. B.↗
NASA NTRS1994

Non-volatile, solid state bistable electrical switch

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Williams, Roger M.↗
NASA NTRS1990

Nonvolatile Ionic Two-Terminal Memory Device

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

Williams, Roger M.↗
NASA NTRS1982

Dynamic switch matrix for the TDMA satellite switching system

Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.

Ho, P. T.↗
NASA NTRS1989

Hyperswitch Network For Hypercube Computer

Data-driven dynamic switching enables high speed data transfer. Proposed hyperswitch network based on mixed static and dynamic topologies. Routing header modified in response to congestion or faults encountered as path established. Static topology meets requirement if nodes have switching elements that perform necessary routing header revisions dynamically. Hypercube topology now being implemented with switching element in each computer node aimed at designing very-richly-interconnected multicomputer system. Interconnection network connects great number of small computer nodes, using fixed hypercube topology, characterized by point-to-point links between nodes.

Chow, Edward↗
NASA NTRS1982

Array processor architecture connection network

A connection network is disclosed for use between a parallel array of processors and a parallel array of memory modules for establishing non-conflicting data communications paths between requested memory modules and requesting processors. The connection network includes a plurality of switching elements interposed between the processor array and the memory modules array in an Omega networking architecture. Each switching element includes a first and a second processor side port, a first and a second memory module side port, and control logic circuitry for providing data connections between the first and second processor ports and the first and second memory module ports. The control logic circuitry includes strobe logic for examining data arriving at the first and the second processor ports to indicate when the data arriving is requesting data from a requesting processor to a requested memory module. Further, connection circuitry is associated with the strobe logic for examining requesting data arriving at the first and the second processor ports for providing a data connection therefrom to the first and the second memory module ports in response thereto when the data connection so provided does not conflict with a pre-established data connection currently in use.

Barnes, George H.↗
NASA NTRS1989

Cascaded resonant bridge converters

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

Stuart, Thomas A.↗
NASA NTRS1975

Amplitude-steered, pseudophased antenna array

Beam may be smoothly scanned around ring array without instantaneous phase transitions while maintaining constant radiated power by gradually transferring power from receding element to element next to leading edge of driven segment, and by accomplishing antenna element switching during intervals when no power is being applied to elements being switched.

Johnson, C. C.↗
NASA NTRS1988

Electronic Neural Networks

Memory based on neural network models content-addressable and fault-tolerant. System includes electronic equivalent of synaptic network; particular, matrix of programmable binary switching elements over which data distributed. Switches programmed in parallel by outputs of serial-input/parallel-output shift registers. Input and output terminals of bank of high-gain nonlinear amplifiers connected in nonlinear-feedback configuration by switches and by memory-prompting shift registers.

Lambe, John↗
NASA NTRS1974

Amplitude steered array

A spin stabilized satellite has an electronically despun antenna array comprising a multiplicity of peripheral antenna elements. A high gain energy beam is established by connecting a suitable fraction or array of the elements in phase. The beam is steered or caused to scan by switching elements in sequence into one end of the array as elements at the other end of the array are switched out. The switching transients normally associated with such steering are avoided by an amplitude control system. Instead of abruptly switching from one element to the next, a fixed value of power is gradually transferred from the element at the trailing edge of the array to the element next to the leading edge.

Dietrich, F. J.↗