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Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
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Birnessite-Type MnO 2 Nanosheets with Layered Structures Under High Pressure: Elimination of Crystalline Stacking Faults and Oriented Laminar Assembly
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Stacking Faults Assist Lithium-Ion Conduction in a Halide-Based Superionic Conductor
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Analytic model of the γ -surface deviation and influence on the stacking fault width between partial dislocations
The stacking fault width (R$_{eq}$) between partial dislocations within an FCC crystalline lattice characterizes the onset of numerous plastic flow mechanisms, as well as the relationship between material strength and grain size. Continuum models traditionally consider a complete unit of dislocation slip ( b ) along the $\langle{110}$$\rangle$ direction distributed between two discrete partial dislocations, each with a fixed partial Burgers vector ( b p ), which bound a stacking fault. Across the stacking fault, the vectorial slip is assumed to be constant, yielding a constant intrinsic stacking fault energy density, $\gamma$$_{isf}$ Here, we demonstrate that the vectorial displacement path taken in accomplishing a complete unit of slip (b) deviates from the expected displacement path containing the local minima, $\gamma$$_{isf}$ leading to a correction in the nominally derived stacking fault width. The magnitude of the correction depends on both the net orientation of the dislocation within the lattice, and also the degree of relaxation of each partial Burgers vector along the $\langle{\bar{1}12}$$\rangle$ direction. We derive a simple analytic model for the corrected stacking fault width, explicitly accounting for the deviation, by introducing a variable ξ (0 < ξ < 1), which governs the magnitude of each partial dislocation component along the $\langle{\bar{1}12}$$\rangle$ direction. Significantly, our model predicts a correction to R$_{eq}$ of ~$\mathscr{O}$ (|b|) for the nominally screw dislocation, and has no noticeable influence on nominally edge dislocations. We apply our model towards computing the stacking fault width of several FCC metals, and demonstrate excellent agreement both with our own numerical data as well as that obtained from ab initio and Molecular Statics (MS) methods within the literature. Lastly, the results from this study demonstrate that, upon judicious application, discrete linear elastic models are successful in reproducing elastic interactions as computed from higher fidelity models on the spatial scale of metallic dislocation cores.
Phase transformation induced plasticity in high-strength hexagonal close packed Co with stacking faults
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Stacking faults in TiC.
Stacking faults in titanium carbide shown by electron microscopy bounded by partial dislocations
The role of intrinsic stacking fault in facilitating the pressure-induced phase transition in CoCrFeMnNi high entropy alloys
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Local lattice distortion mediated formation of stacking faults in Mg alloys
Long periodic stacking ordered phases (LPSOs), consisting of various configurations of stacking faults, play an important role in developing ultrastrong Mg alloys with moderate ductility. However, their formation mechanisms are far from clear as no apparent defects are introduced during their formation as it is commonly believed that stacking faults are induced by defects. Here, we present the atomic and electronic basis for lattice-distortion-mediated formation of stacking faults, i.e., localized face-centredcubic (FCC) structures, within a Mg-Zn-Y alloy with a hexagonal close-packed (HCP) structure. The atomic motion trajectories from ab-initio molecular dynamic simulations show that the Mg atoms occupying the nearest neighbour positions of Zn and Y solute atoms undergo a local HCP-to-FCC transition. It is revealed that a local lattice distortion caused by the solute atoms enables the Mg atoms to move and rearrange into a local FCC configuration, which is validated by high resolution scanning transmission microscopy and in-situ synchrotron X-ray diffraction. Our simulations provide profound insight into the formation mechanism of stacking faults in HCP Mg and their physical nature of phase transformations. This is not only critically important because conventional defects, such as dislocations and vacancies, are important to deformation for Mg and its alloys, but also because they serve as a potential new approach to the design of advanced Mg alloys when defects could be used to facilitate
Influence of impurities on stacking fault energy determination
Stacking fault energy determination, discussing impurities influence in equilibrium dimensions distortion of extended nodes in titanium carbide
Mobility and coalescence of stacking fault tetrahedra in Cu
Stacking fault tetrahedra (SFTs) are ubiquitous defects in face-centered cubic metals. They are produced during cold work plastic deformation, quenching experiments or under irradiation. From a dislocation point of view, the SFTs are comprised of a set of stair-rod dislocations at the (110) edges of a tetrahedron bounding triangular stacking faults. These defects are extremely stable, increasing their energetic stability as they grow in size. At the sizes visible within transmission electron microscope they appear nearly immobile. Contrary to common belief, we show in this report, using a combination of molecular dynamics and temperature accelerated dynamics, how small SFTs can diffuse by temporarily disrupting their structure through activated thermal events. More over, we demonstrate that the diffusivity of defective SFTs is several orders of magnitude higher than perfect SFTs, and can be even higher than isolated vacancies. Finally, we show how SFTs can coalesce, forming a larger defect in what is a new mechanism for the growth of these omnipresent defects.
Stacking Fault Energy Based Alloy Screening for Hydrogen Compatibility
The selection of austenitic stainless steels for hydrogen service is challenging since there are few intrinsic metrics that relate alloy composition to hydrogen degradation. One such metric, explored here, is intrinsic stacking fault energy. Stacking fault energy has an influence on the character and structure of dislocations and on the formation of secondary crystalline phases created during mechanical deformation in austenitic alloys. In this work, a data-driven model for the intrinsic stacking fault energy of common austenitic stainless steel alloys is applied to compare the relative degradation of tensile performance in the presence of hydrogen. A transition in the tensile reduction of area of both 300-series and manganese stabilized stainless steels is observed at a calculated stacking fault energy of approximately 43 mJ m -2 , below which pronounced hydrogen degradation on tensile ductility is observed. The model is also applied to suggest alloying strategies for low nickel austenitic stainless steels for hydrogen service. Lastly, through this investigation, we find that calculated intrinsic stacking fault energy is a high-throughput screening metric that enables the ranking of the performance of a diverse range of austenitic stainless steel compositions, as well as the identification of new alloys, with regard to hydrogen compatibility.
Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.
Ab initio study of point defects near stacking faults in 3C-SiC
Interactions between point defects and stacking faults in 3C-SiC are studied using an ab initio method based on density functional theory. The results show that the discontinuity of the stacking sequence considerably affects the configurations and behavior of intrinsic defects, especially in the case of silicon interstitials. The existence of an intrinsic stacking fault (missing a C-Si bilayer) shortens the distance between the tetrahedral-center site and its second-nearest-neighboring silicon layer, making the tetrahedral silicon interstitial unstable. Instead of a tetrahedral configuration with four C neighbors, a pyramid-like interstitial structure with a defect state within the band gap becomes a stable configuration. In addition, orientation rotation occurs in the split interstitials that has diverse effects on the energy landscape of silicon and carbon split interstitials in the stacking fault region. Moreover, our analyses of ionic relaxation and electronic structure of vacancies show that the built-in strain field, owing to the existence of the stacking fault, makes the local environment around vacancies more complex than that in the bulk.
Linking electronic structure calculations to generalized stacking fault energies in multicomponent alloys
Abstract The generalized stacking fault energy is a key ingredient to mesoscale models of dislocations. Here we develop an approach to quantify the dependence of generalized stacking fault energies on the degree of chemical disorder in multicomponent alloys. We introduce the notion of a “configurationally-resolved planar fault” (CRPF) energy and extend the cluster expansion method from alloy theory to express the CRPF as a function of chemical occupation variables of sites surrounding the fault. We apply the approach to explore the composition and temperature dependence of the unstable stacking fault energy (USF) in binary Mo–Nb alloys. First-principles calculations are used to parameterize a formation energy and CRPF cluster expansion. Monte Carlo simulations show that the distribution of USF energies is significantly affected by chemical composition and temperature. The formalism is broadly applicable to arbitrary crystal structures and alloy chemistries and will enable the development of rigorous models for deformation mechanisms in high-entropy alloys.