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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO 2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p⁺ and n⁺ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm² even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm² in the studied p⁺ and n⁺ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm² with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade

In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.

Kimrey, Emerson [Scripps College]↗
DOE OSTI2024

Cherenkov photon background for low-noise silicon detectors in space

Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Synchrotron-based Characterization Techniques for Radiation Detection Materials and Devices: An Overview

High-performance room-temperature radiation detectors (high energy resolution for spectrometers, high spatial resolution for imaging devices, and low defect-density for high flux applications) are needed for photon energies (>20 keV) that are not well suited for silicon detectors. Applications for such radiation detectors include nonproliferation, synchrotron, medical, astrophysics, and homeland security. Material- and device- characterization to understand and solve the limiting factors of radiation detection materials and devices is a core element of a radiation detector development R&D program. This presentation will give an overview on the two main synchrotron-based characterization techniques that have been employed by the authors in the last ~20 years: (1) White Beam X-ray Diffraction Topography and (2) Micron-scale detector mapping. A perfect (one domain) crystal (radiation detection material) is a requirement to achieve a highperformance radiation detector. White Beam X-ray Diffraction Topography (WBXDT) allows the rapid screening of the crystallinity of the detector material. With WBXDT we can quickly screen CZT and other crystals to make sure they have only one domain, and to see the presence of extended defects and strain fields.

Camarda, Giuseppe S.↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2024

Instrumentation and Techniques in High Energy Physics

This book provides an introduction of some of the technology and techniques of modern particle physics. Each chapter is a deep dive into the relevant subject, which includes silicon pixel detectors, plastic scintillator in a high radiation environment, Cerenkov detectors, particle jet identification, noble gas neutrino detectors, and machine learning. The target audience is graduate students and more senior researchers who wish to learn a new technology or technique. The text pedagogical in nature and each chapter is a standalone treatment of a specific topic. The coverage focuses on state-of-the-art techniques, rather than describing the technology's history. Written by acknowledged experts in the subject matter, Instrumentation and Techniques in High Energy Physics, is an important addition to the library of any particle physicist.

Lincoln, Don↗
DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗
DOE OSTI2026

Evaluation of 3D pixel silicon sensors for the CMS Phase-2 Inner Tracker

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R&D program, aiming at using 3D pixel silicon sensors in the innermost barrel layer of the detector, has been carried out by CMS in collaboration with the FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The sensors will feature a pixel cell size of 25 × 100 µm 2 , with a centrally located electrode connected to the readout chip. The sensors are read out by the RD53A and CROCv1 chips, developed in 65 nm CMOS technology by the RD53 Collaboration, a joint effort between the ATLAS and CMS groups. This paper reports the results achieved in beam test experiments before and after irradiation, up to a fluence of approximately 2 . 6 × 1 0 16 n eq /cm 2 . Measurements of assemblies irradiated to a fluence of 1 × 10 16 n˙eq/cm 2 show a hit detection efficiency higher than 96% at normal incidence, with fewer than 2% of channels masked, across a bias voltage range greater than 50 V . Even after irradiation to a higher fluence of 1.6 × 10 16 n˙eq/cm 2 , similar performance is maintained over a bias voltage range of 30 V , remaining well within CMS requirements.

3D pixel↗
DOE OSTI2026

Design optimization of MAPS-based detectors using a data-driven fast simulation approach

A parametric simulation tool for pixel sensors is presented. A realistic pixel response is simulated purely based on measurement input, without requiring detailed knowledge of the underlying manufacturing process. As such, it provides an efficient alternative to the use of Technology Computer-Aided Design simulations, which typically depend on proprietary process information. Due to its parametric approach, the package is fast and thus particularly useful for larger detector systems and high hit rate environments. This work presents measurements, simulation and its validation for the MALTA2 sensor. It is a small collection electrode monolithic active pixel sensor produced in the Tower 180 nm complementary metal-oxide-semiconductor imaging process. Modifications to the sensor’s periphery, mainly in the hit merger, are studied in order to optimize the performance for tracking and calorimetry. This optimization is of special interest as part of the MALTA3 sensor redesign in the 65 nm Tower Partners Semiconductor Co. process.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Light-tight Skipper-CCDs for X-Ray Detection in Space

Skipper Charge-Coupled Devices (skipper-CCDs) are pixelated silicon detectors with deep sub-electron resolution. Their radiation hardness and capability to reconstruct energy deposits with unprecedented precision make them a promising technology for space-based X-ray astronomy. In this scenario, optical and near-infrared photons may saturate the sensor, distorting the reconstructed signal. We present a light-tight shield for skipper-CCDs to suppress optical backgrounds while preserving X-ray detection efficiency. We deposited thin aluminum layers on the CCD surface using an e-beam evaporator and evaluated their blinding performance across wavelengths from 650 to 1000 nm using a monochromator, as well as the X-ray transmission using an 55 Fe source. We find that 50 and 100 nm layers provide >99.6% light suppression, with no efficiency loss for 5.9 and 6.4 keV X-rays. In addition, we used Geant4 simulations to extend these results to a broader energy range and quantify the efficiency loss for different aluminum thicknesses. Results show that thin aluminum coatings are an effective, low-cost solution for optical suppression in skipper-CCDs intended for X-ray detection and space instrumentation.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

First measurements of energetic protons in Mega Amp Spherical Tokamak Upgrade (MAST-U)

First proton production rates from the d(d,p)t reaction in the Mega Amp Spherical Tokamak Upgrade (MAST-U) are measured. The data were taken during the MAST-U experimental campaign with an upgraded version of the proton detector (PD) previously used in MAST. The new detector array consists of three collimated silicon surface barrier detectors with a depletion depth of 300 μm and a collimated 120 μm thick diamond detector, mounted on the MAST-U reciprocating probe arm. This array measures the energies of unconfined energetic 3 MeV protons and 1 MeV tritons mainly produced by beam-thermal DD reactions during neutral beam injection heating. Diamond detectors have the potential to be uniquely suited to detect charged fusion products as they promise to be much more radiation resistant and much less sensitive to temperature variations compared to silicon-based detectors. Using silicon and diamond-based detectors simultaneously allowed us to directly compare the performance of these two detector types. PD particle rates measured during different plasma scenarios are presented and compared to neutron rates measured using the neutron camera upgrade and TRANSP predictions.

Instruments & Instrumentation↗
DOE OSTI2026

Using Quantum Sensors to Probe the Quasiparticle Excess in Quantum Circuits due to Ionizing Radiation

This project quantified natural ionizing radiation as a source of excess quasiparticles in superconducting quantum circuits. Thermal Kinetic Inductance Detectors (TKIDs) were developed and deployed to measure event‑by‑event energy deposition in silicon substrates at millikelvin temperatures. Measurements and radiation transport simulations showed strong agreement across keV–MeV energies, providing validated background models and design guidance to mitigate radiation‑induced decoherence in superconducting qubits and detectors.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

The STAR Forward Silicon Tracker

The Forward Silicon Tracker (FST) is a pivotal component of the forward upgrade of the Solenoidal Tracker at RHIC (STAR), designed to discern hadron charge signs with a momentum resolution better than 30% for 0.2 < p T < 2GeV/c in the 2.5 < η < 4 pseudorapidity range. Its compact design features three disks along the beam direction, minimized material budget, and scattering effects. The FST uses Hamamatsu’s p-in-n silicon strip sensors with a double metal layer that enables efficient signal routing to the readout electronics, enhancing overall detector performance. The flexible hybrid boards, essential for the readout system, are constructed with Kapton and copper layers to optimize signal handling and power distribution. These boards connect silicon strips to analogue pipeline ASIC APV25-S1 chips, which read up to 128 channels each. A cooling system with nonconducting, volatile NOVEC 7200 coolant at 22.2 °C mitigates ASIC-generated heat. Furthermore, the FST enhances forward tracking performance at STAR as an integral part of the forward upgrade.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗