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Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
Thermal emissivity and solar absorptivity of Al coated with surface layers of aluminum oxide and silicon oxide, describing fabrication techniques and performance measurements
Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.
Silane for polycrystalline films deposition on oxidized silicon wafers, noting substrate temperature effects on preferred orientation of deposits
This work reports the numerical values of the dielectric functions derived from far-infrared measurements of silicon nitride, silicon oxide, and bulk high-purity silicon. These dielectric parameters have been previously reported in the literature and are presented here in a convenient form for future optical and sensor design applications.
Silicon oxide films coated satellite aluminum surfaces solar absorptivity and thermal emissivity, noting suitability as temperature control coatings
Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.
Deposition and evaluation of silicon films formed by pyrolytic decomposition of silane on oxidized silicon single crystals
Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.
Reliability of metal oxide silicon integrated microcircuits
Silicon oxide film growth behavior in microwave discharge noting limiting oxide thickness obtainable at infinite time free of mobile ions
Literature review on metal oxide silicon semiconductor technology
Reflective surface deposition of aluminum and silicon oxide on epoxy coated substrate of solar energy concentrator
UV irradiation effect on optical properties, thickness and chemical composition of silicon oxide films
Electron microscopy calculations in minimum and maximum capacitance theories for silicon-silicon oxide structures and interfaces
Microelectronics research on silicon-silicon oxide structures and interfaces
A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.
We use positron annihilation spectroscopy to study positron kinetics in electrically-biased metal-oxide-silicon system and trapping at the SiO2/Si interface.