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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Nuclear Data Sheets for A=39☆

Experimental nuclear structure data from various reactions and decays have been evaluated for all known nuclides of mass 39 (Mg, Al, Si, P, S, Cl, Ar, K, Ca, Sc, Ti). Detailed evaluated nuclear structure information is presented for each reaction and decay and the best values combining all available data are recommended for level energies, half-lives, γ-ray energies and intensities, decay properties (energies, intensities and placement of radiations), and other spectroscopic data. The {sup 39}K, {sup 39}Ca and {sup 39}Ar are the most extensively studied nuclides; no excited states are known in {sup 39}Mg and {sup 39}Ti. This work supersedes the earlier full evaluation of A=39 by B. Singh and J. Cameron (2006Si02).

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Revisiting pressure-induced phase transition in silicon clathrates using Ge substitution

Ba 8 Si 39 Ge 7 and Ba 8 Si 29 Ge 17 have been studied at high pressure using x-ray diffraction and x-ray absorption spectroscopy (XAS) at the Ge K edge. In Ba 8 Si 39 Ge 7 , a transition is observed similar to the one in Ba 8 Si 46 , apparently isostructural. However, the XAS data analysis shows that the transformation is related to the off-centering of the Ba atoms. A theoretical model based on a Landau potential suggests that this transition is second order, with a symmetry-breaking mechanism related to the Ba displacement probably initiated by the vacancy creation or local distortion predicted theoretically. Lastly, this analysis gives a coherent picture of the phase transition mechanism. In the case of Ba 8 Si 29 Ge 17 , such phase transition is not observed as the Ba atoms appear already off-center at ambient pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Binary pseudo-random array standard for extreme ultraviolet lithography tool characterization

Extreme ultraviolet (EUV) imaging tools play a crucial role in EUV lithography. Achieving high accuracy in EUV metrology is essential for advanced semiconductor manufacturing. A thorough characterization of the instrumentation in use is required. Binary pseudo-random arrays (BPRAs) are an established standard for calibrating and characterizing optical instruments in the frequency domain. Here, we expand the BPRA standard to applications in EUV imaging. To extend the technology to the EUV spectral range, a high-resolution BPRA target with the smallest feature size of 40 nm is developed. The EUV BPRA target establishes an in situ and portable calibration and alignment standard for EUV imaging. The target is patterned by means of electron-beam lithography, using a nickel absorber with a thickness of 39 nm. The substrate is a 4″ silicon wafer with a molybdenum/silicon multilayer coating. To demonstrate the efficacy of the target and develop the instrument calibration protocol, the target is imaged on the Sharp Hyper-NA Actinic Reticle Review Project EUV mask microscope. Power spectral density (PSD) data are presented. The characteristics of the imaging system are imprinted on the PSD. The modulation transfer function is extracted from the PSD data. A partially coherent imaging model is used as a reference to the experimental results.

BPRA↗
DOE OSTI2016

Tensile strains give rise to strong size effects for thermal conductivities of silicene, germanene and stanene

Based on first principles calculations and self-consistent solution of linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of freestanding silicene, germanene and stanene under different isotropic tensile strains and temperatures. In this work, we find a strong size dependence of k for silicene with tensile strain, i.e., divergent k with increasing system size, in contrast, the intrinsic room temperature k for unstrained silicene converges with system size to 19.34 W/m –1 K –1 by 178 nm. The room temperature k of strained silicene becomes as large as that of bulk silicon by 84 m, indicating the possibility of using strain in silicene to manipulate k for thermal management. The relative contribution to the intrinsic k from out-of-plane acoustic modes is largest for unstrained silicene, –39% at room temperature. The single mode relaxation time approximation, which works reasonably well for bulk silicon, fails to appropriately describe phonon thermal transport in silicene, germanene and stanene within the temperature range considered. For large samples of silicene, k increases with tensile strain, peaks at –7% strain and then decreases with further strain. In germanene and stanene increasing strain hardens and stabilizes long wavelength out-of-plane acoustic phonons, and leads to similar k behaviors to those of silicene. As a result, these findings further our understanding of phonon dynamics in group-IV buckled monolayers and may guide transfer and fabrication techniques of these freestanding samples and engineering k by size and strain for applications of thermal management and thermoelectricity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterisation of magnesium potassium phosphate cements blended with fly ash and ground granulated blast furnace slag

Magnesium potassium phosphate cements (MKPCs), blended with 50 wt.% fly ash (FA) or ground granulated blast furnace slag (GBFS) to reduce heat evolution, water demand and cost, were assessed using compressive strength, X-ray diffraction (XRD), scanning electron microscopy (SEM) and nuclear magnetic resonance (NMR) spectroscopy on {sup 25}Mg, {sup 27}Al, {sup 29}Si, {sup 31}P and {sup 39}K nuclei. We present the first definitive evidence that dissolution of the glassy aluminosilicate phases of both FA and GBFS occurred under the pH conditions of MKPC. In addition to the main binder phase, struvite-K, an amorphous orthophosphate phase was detected in FA/MKPC and GBFS/MKPC systems. It was postulated that an aluminium phosphate phase was formed, however, no significant Al–O–P interactions were identified. High-field NMR analysis of the GBFS/MKPC system indicated the potential formation of a potassium-aluminosilicate phase. This study demonstrates the need for further research on these binders, as both FA and GBFS are generally regarded as inert fillers within MKPC.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Floating substrate process: Large-area silicon sheet task low-cost solar array project

Supercooling of silicon-tin alloy melts was studied. Values as high as 78 C at 1100 C and 39 C at 1200 C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050 C and 1150 C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200 C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters.

Garfinkel, M.↗
DOE OSTI2017

Sensitivity to Thermonuclear Reaction Rates in Modeling the Abundance Anomalies of NGC 2419

Abundance anomalies in globular clusters provide strong evidence for multiple stellar populations within each cluster. These populations are usually interpreted as distinct generations, with the currently observed second-generation stars having formed in part from the ejecta of massive, first-generation “polluter” stars, giving rise to the anomalous abundance patterns. The precise nature of the polluters and their enrichment mechanism are still unclear. Even so, the chemical abundances measured in second-generation stars within the globular cluster NGC 2419 provide insight into this puzzling process. Previous work used Monte Carlo nuclear reaction network calculations to constrain the temperature–density conditions that could reproduce the observed abundances, thereby placing robust limits on the origins of the polluter material. The effect of individual reaction rates on these conditions has not been studied, however. Thus, we perform an exhaustive sensitivity study on the nuclear physics input to determine which reactions have the greatest impact on these predictions. We find that the {sup 30}Si(p,γ){sup 31}P, {sup 37}Ar(p,γ){sup 38}K, {sup 38}Ar(p,γ){sup 39}K, and {sup 39}K(p,γ){sup 40}Ca reactions are all critical in determining the temperature–density conditions, and ultimately, the origins of the polluter material. We conclude with recommendations for future experiments.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Selective oxide-forming alloy, coating formed from and machine component including same

A selective oxide-forming alloy, a coating formed from, and a machine component including the coating are provided. The selective oxide-forming alloy includes between atomic percent and 26 atomic percent silicon (Si), between 21 atomic percent and 27 atomic percent titanium (Ti), between 30 atomic percent and 39 atomic percent aluminum (Al), between 2 atomic percent and 10 atomic percent hafnium (Hf), and a balance of niobium (Nb).

Holgate, Collin Scott↗
DOE OSTI2017

Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on n-Si substrates with an oxide thickness of 39 Å are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 × 10{sup 12} cm{sup –2} at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A High Gain Lens-Coupled On-Chip Antenna Module for Miniature-Sized Millimeter-Wave Wireless Transceivers

This paper presents high gain and compact Transmit/Receive (TX/RX) integrated antennas in a standard BiCMOS 130nm technology for millimeter-scale millimeter-wave (mm-wave) applications, including high data rate radios and high resolution radars. The proposed TX/RX antenna module utilizes an integrated dipole antenna for the receiver and a slot antenna for the transmitter, placed orthogonally. The achieved gain and radiation efficiency are 5.7dBi and 41.3% for the slot antenna, respectively, and 6dBi and 39% for the dipole antenna. The link budget is improved by 16dB by optimization on the geometry aswell as application of a high resistivity hemispheric silicon dielectric lens.

Engineering↗
NASA NTRSDate not supplied

Removing Contamination from Genesis Sapphire Collectors by Polishing

The Genesis Solar Wind Sample Re-turn Mission used a variety of materials as solar wind (SW) collectors. “Sapphire”, which is single crystal corundum, was ~6.7% of the collector material flown. But, a much higher percentage of Genesis sapphire collectors (SAP) survived the crash of the sample-return capsule as SAP is chemically inert, physically tough, and hard (MOHS 9, by definition). In fact, 39 sapphire fragments of bulk SW collector having areas ≥60 sq mm are available in JSC’s Genesis online catalog, whereas only 1 similarly sized silicon fragment is available (accessed 1/1/2020). In spite of the ease of accessing larger fragments, sapphire has not been popular among Genesis re-searchers because it is an electrical insulator (making SIMS more difficult) and its chemical inertness, high melting point and high hardness precludes the use of many mass-spectroscopic techniques. Recently, as alternative techniques for measuring Genesis samples are developed (e.g., synchrotron TXRF, INAA, laser ablation mass spectroscopy), more researchers are choosing to analyze sapphire. Thus, a number of researchers are actively studying how to best remove contamination from the Genesis sapphire surfaces. This report extends the task in Schmeling et al. that used polishing compounds to remove contamination from Genesis sapphire and focuses on contaminants (welded silicon, aluminum) that current chemical methods find recalcitrant.

M. Schmeling↗
DOE OSTI2014

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Conducting intrinsic nanocrystalline silicon films with high growth rate prepared at 27.12 MHz frequency

Growth and characterization of intrinsic nanocrystalline silicon (nc-Si:H) thin films have been studied using 27.12 MHz H{sub 2}−diluted SiH{sub 4} plasma in PECVD, by optimizing the gas pressure during deposition. High electrical conductivity (∼10{sup −3} S cm{sup −1}) and narrow optical gap (1.762 eV) of the mostly crystalline (∼80%) network with optimum hydrogenation and dominance towards thermodynamically preferred (220) crystallographic orientation, obtained at a high growth rate (39 nm/min), signify its promising use in the fabrication of devices e.g., solar cells in particular.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux

Silicon pillar structures filled with a neutron converter material ( 10 B) are designed to have high thermal neutron detection efficiency with specific dimensions of 50 μm pillar height, 2 μm pillar diameter and 2 μm spacing between adjacent pillars. In this paper, we have demonstrated such a detector has a high neutron-to-gamma discrimination of 10 6 with a high thermal neutron detection efficiency of 39% when exposed to a high gamma-ray field of 10 9 photons/cm 2 s.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2013

Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In{sub 0.3}Ga{sub 0.7}N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In{sub 0.3}Ga{sub 0.7}N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Detection of the J = 1 to 0 rotational transition of vibrationally excited silicon monoxide

The v = 1,J = 1 to 0 rotational transition of SiO at 43.1 GHz has been detected in the direction of Becklin's star in the Orion Nebula, and in the M-type star W Hya. In Orion two velocity components are observed, one (the stronger) at a radial velocity of 17 km/sec, the other at -7 km/sec; in W Hya a single line is observed at 39 km/sec. In each case a line at the same radial velocity has been observed at 86.2 GHz in the v = 1,J = 2 to 1 transition, so that the presence of vibrationally excited SiO would seem to be confirmed beyond a reasonable doubt. In the v = 1 state, the photon fluxes of the J = 2 to 1 and 1 to 0 transitions are about equal, suggesting saturated masers occupying the same region of space.

Thaddeus, P.↗
DOE OSTI2018

Acoustic waveguiding in a silicon carbide phononic crystals at microwave frequencies

Two dimensional SiC–air phononic crystals have been modeled, fabricated, and tested with a measured bandgap ranging from 665 to 693 MHz. Snowflake air inclusions on a hexagonal lattice were used for the phononic crystal. By manipulating the phononic crystal lattice and inserting circular inclusions, a waveguide was created at 680 MHz. The combined insertion loss and propagation loss for the waveguide is 8.2 dB, i.e., 39% of the energy is guided due to the high level of the confinement afforded by the phononic crystal. In conclusion, the SiC–air phononic crystals and waveguides were fabricated using a CMOS-compatible process, which allows for seamless integration of these devices into wireless communication systems operating at microwave frequencies.

42 ENGINEERING↗
NASA NTRS1982

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗