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At least 19 records

Nuclear Data Sheets for A = 33

The experimental data are evaluated for known nuclides of mass number A=33 (Ne, Na, Mg, Al, Si, P, S, Cl, Ar, K). Detailed evaluated level properties and related information are presented, including adopted values of level and {gamma}-ray energies, decay data (energies, intensities and placement of radiations), and other spectroscopic data. This work supersedes earlier full evaluations of A=33 published by 1990En08 (also 1998En04 update) and 1978En02. Experimental studies for the identification of the {sup 33}Ne and {sup 33}K nuclides have not met with success as yet. Values of S(n) and S(p) from systematics for {sup 33}Ne and {sup 33}K, respectively suggest that these nuclei are likely to be unstable to particle emission. The radioactive decay schemes of {sup 33}Na and {sup 33}Al seem incomplete in view of large Q values and known excitations much below than allowed by the Q values. The {sup 33}S and {sup 33}Cl nuclides remain as the most extensively studied from many different reactions and decays.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Micron-size Silicon Monoxide Asymmetric Membranes for Highly Stable Lithium Ion Battery Anode

To meet the increasing demand for high energy density lithium ion batteries for electric vehicles and mobile electronics, it is mandatory to make revolutionary changes in electrode materials and chemistry. In this report, micron-size silicon monoxide powders are utilized to fabricate asymmetric membranes via a phase inversion method. We investigate the effects of carbonization temperature, silicon monoxide concentration and glues on membrane microstructure and electrochemical performance. It is also observed that silicon monoxide powders in the membranes consist of silicon with multiple oxidation states. All silicon monoxide asymmetric membrane electrodes are characteristic of significantly improved cycling stability as compared to the control silicon monoxide electrode. The best cycling performance is achieved from the asymmetric membrane with lower silicon monoxide content and using carboxymethyl cellulose as the glue. 95% initial capacity can be retained after 110 cycles at 400 mA g -1 for the membrane with ~33 wt.% silicon monoxide. Its initial capacity loss is only 23.1% with an average coulombic efficiency of 99.82% over 110 cycles.

25 ENERGY STORAGE↗

SuperCDMS Prototype Detector Design and Testing

A substantial amount of astrophysical evidence indicates that approximately a quarter of all energy in the universe is composed of a nonluminous, and nonbaryonic \dark" matter. Of the potential dark matter particle candidates, Weakly Interacting Massive Particles, or WIMPs, is particularly well motivated. As a means to directly detect WIMP interactions with baryonic matter, the Cryogenic Dark Matter Search (CDMS) project was established, operating at the Soudan Underground Laboratory from 2003 - 2015, under the CDMS II and SuperCDMS Soudan experiments. CDMS detectors simultaneously measure the ionization and phonon energies of recoil events in Si and Ge crystals kept at cryogenic temperatures in a low-background environment. The ratio of ionization energy to recoil energy serves as a discrimination parameter to separate nuclear recoil events from the electron-recoil background. The next installation, SuperCDMS SNOLAB, is preparing for future operation, with an initial payload of eighteen Ge and six Si, 100 mm diameter, 33 mm thick detectors. Of this initial payload, eight Ge and four Si detectors will operate in a high-voltage ( 100 V) mode, which have an increased sensitivity to low-mass WIMPs due to decreased energy thresholds. The SuperCDMS test facility at University of Minnesota aids in the detector R&D and characterization of prototype detectors, as part of the scale-up eort for Super- CDMS SNOLAB. This thesis presents the rst full ionization and phonon characterization study of a 100 mm diameter, 33 mm thick prototype Ge detector with interleaved phonon and ionization channels. Measurements include ionization collection eciency, surface event rejection capabilities, and successful demonstration of nuclear recoil event discrimination. Results indicate that 100 mm diameter, interleaved Ge detectors show potential for use in SuperCDMS SNOLAB. As part of detector R&D, the Minnesota test facility also looks beyond the next stage of SuperCDMS, investigating larger individual detectors as a means to easily scale up the sensitive mass of future searches. This thesis presents the design and initial testing results of a prototype 150 mm diameter, 33 mm thick silicon ionization detector, which is 5.2 times larger than those used in SuperCDMS at Soudan and 2.25 times larger than those planned for use at SuperCDMS SNOLAB. In addition, the detector was operated with contact-free ionization electrodes to minimize bias leakage currents, which can limit operation at high bias voltages. The results show promise for the operation of both large volume silicon detectors and contact-free ionization electrodes for scaling up detector mass and bias.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Reversible elastic deformation of functionalized sp{sup 2} carbon at pressures of up to 33 GPa

We show that sp{sup 2} carbon bonded to silicon and oxygen can withstand reversible elastic deformation at pressures of up to 33 GPa. These experiments were carried out in a diamond anvil cell. In-situ Raman spectroscopy was employed to record the reversibility of elastic deformation by measuring the movement in the D and G peaks of carbon. Above 33 GPa the material, a silicon oxycarbide, transforms into an unidentified state which is retained upon unloading down to ambient pressure. Thermodynamical analysis suggests that the material could have transformed into a crystalline state at these ultrahigh pressures, driven by mechanical work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In-beam {gamma}-ray spectroscopy of {sup 35}Mg and {sup 33}Na

Excited states in the very neutron-rich nuclei {sup 35}Mg and {sup 33}Na were populated in the fragmentation of a {sup 38}Si projectile beam on a Be target at 83 MeV/u beam energy. We report on the first observation of {gamma}-ray transitions in {sup 35}Mg, the odd-N neighbor of {sup 34}Mg and {sup 36}Mg, which are known to be part of the 'island of inversion' around N=20. The results are discussed in the framework of large-scale shell-model calculations. For the A=3Z nucleus {sup 33}Na, a new {gamma}-ray transition was observed that is suggested to complete the {gamma}-ray cascade 7/2{sup +}{yields}5/2{sup +}{yields}3/2{sub gs}{sup +} connecting three neutron two-particle-two-hole intruder states that are predicted to form a close-to-ideal K=3/2 rotational band in the strong-coupling limit.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

The reduction of SiO2 with carbon in a plasma

The feasibility of a process for the reduction of low impurity silica (SiO2) with carbon in a plasma heat source was investigated. An RF induction plasma reactor was fabricated and used to optimize process variables. Maximum silicon content of the product was 33% by weight. Emission spectrographic analysis of this product showed a reduction in some impurity levels of one to two orders of magnitude. While the plasma approach proved technically feasible, poor heat transfer from the plasma to the reactant and low yield make the process economically unattractive for large-scale use.

Coldwell, D. M.↗

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Performance of the first 150 mm diameter Cryogenic silicon ionization detectors with contact-free electrodes

Cryogenic semiconductor detectors operated at temperatures below 100 mK are commonly used in particle physics experiments searching for dark matter. The largest such germanium and silicon detectors, with diameters of 100 mm and thickness of 33 mm, are planned for use by the Super Cryogenic Dark Matter Search (SuperCDMS) experiment at SNOLAB, Canada. Still larger individual detectors are being investigated to scale up the sensitive mass of future experiments. We present here the first results of testing two prototype 150 mm diameter silicon ionization detectors. The detectors are 25 mm and 33 mm thick with masses 1.7 and 2.2 times larger than those currently planned for SuperCDMS. These devices were operated with contact-free bias electrodes to minimize leakage currents which currently limit operation at high bias voltages. The results show promise for the use of such technologies in solid state cryogenic detectors.

150 mm↗

Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Performance of the CLAS12 Silicon Vertex Tracker modules

For the 12 GeV upgrade, the CLAS12 experiment has designed a Silicon Vertex Tracker (SVT) using single sided microstrip sensors fabricated by Hamamatsu. The sensors have graded angle design to minimize dead areas and a readout pitch of 156{micro}m, with intermediate strip. Double sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module read out by four Fermilab Silicon Strip Readout (FSSR2) chips featuring data driven architecture, mounted on a rigid-flex hybrid. Modules are assembled on the barrel using unique cantilevered geometry to minimize the amount of material in the tracking volume. Design and performance of the SVT modules are presented, focusing on results of electrical measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

The CLAS12 Silicon Vertex Tracker

Silicon Vertex Tracker (SVT) has been designed for the CLAS12 spectrometer using single-sided microstrip sensors fabricated by Hamamatsu Photonics. The sensors have a graded angle design to minimize dead areas and a readout pitch of 156 um, with intermediate strips. Each double-sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module, read out by four Fermilab Silicon Strip Readout (FSSR2) chips, featuring data-driven architecture, mounted on a rigid–flex hybrid board. The modules are assembled in a barrel configuration using a unique cantilevered geometry to minimize the amount of material in the tracking volume. This paper is focused on the design, qualification of the performance, and experience in operating and commissioning the tracker during the first year of the data taking.

47 OTHER INSTRUMENTATION↗

Characterization of coplanar poled electro optic polymer films for Si-photonic devices with multiphoton microscopy

We imaged coplanar poled electro optic (EO) polymer films on transparent substrates with a multiple-photon microscope in reflection and correlated the second-harmonic light intensity with the results of Pockels coefficient (r{sub 33}) measurements. This allowed us to make quantitative measurements of poled polymer films on non-transparent substrates like silicon, which are not accessible with traditional Pockels coefficient measurement techniques. Phase modulators consisting of silicon waveguide devices with EO polymer claddings with a known Pockels coefficient (from V{sub π} measurements) were used to validate the correlation between the second-harmonic signal and r{sub 33}. This also allowed us to locally map the r{sub 33} coefficient in the poled area.

36 MATERIALS SCIENCE↗

Constraining spectroscopic factors near the r -process path using combined measurements: Kr 86 ( d , p ) 87 Kr

Background: Current nuclear structure models indicate that the shell structure near the valley of stability, with well-established shell closures at N=50, for example, changes in very neutron-rich nuclei far from stability. Single-particle properties of nuclei away from stability can be probed in single-neutron (d,p) transfer reactions with beams of rare isotopes. The interpretation of these data requires reaction theories with various effective interactions. Often, approximations made to the final bound-state potential introduce a large uncertainty in the extracted single-particle properties, in particular the spectroscopic factor. Purpose: Mitigate this uncertainty using a combined measurement method to constrain the shape of the bound-state potential and to reliably extract the spectroscopic factor. Methods: The 2 H( 86 Kr,p) 87 Kr reaction was measured at 33 MeV/u at the National Superconducting Cyclotron Laboratory (NSCL) as a test of the combined method. The reaction protons were detected with the Oak Ridge Rutgers University Barrel Array (ORRUBA) of position sensitive silicon strip detectors, the first implementation of ORRUBA coupled to the S800 spectrograph with fast beams at NSCL. Results: These measurements at 33 MeV/u are combined with previous studies of the 86 Kr(d,p) reaction at 5.5 MeV/u to demonstrate a successful case of the combined method to constrain the shape of the single-particle potential and deduce asymptotic normalization coefficients and spectroscopic factors. In particular, the single-particle asymptotic normalization coefficient for the ground state of 87 Kr was constrained to b d5/2 =6.46$^{+1.12}_{–0.57}$ fm –1/2 , and therefore the deduced spectroscopic factor is S=0.44$^{+0.09}_{–0.13}$ with uncertainties dominated by experimental statistics. Conclusions: By combining measurements at two very different beam energies, single-particle asymptotic normalization coefficients, at least for low angular momentum transfers, can be constrained. Thus, spectroscopic factors can be deduced with uncertainties dominated by experimental uncertainties, rather than limited knowledge of bound-state potential parameters.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Impact of Accelerated StressTests on SiC MOSFET Precursor Parameters: Preprint

Incorporating SiC power MOSFETs is very attractive for advancing power electronic system performance, yet the system reliability with new devices remains in question. This work presents an overview of accelerated lifetime tests and the packaging and semiconductor failure mechanisms they excite. The experiments explained here includes High Temperature Gate Bias (HTGB), Switching Cycling, Power Cycling, and Thermal Cycling. These experiments stress different failure mechanisms, that show degradation in different device parameters including, but not limited to, threshold voltage and on-resistance. These four experiments help illustrate the spectrum between device and package degradation that can be used to design more reliable power electronic circuits.

33 ADVANCED PROPULSION SYSTEMS↗

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015–2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2–20 billion GJ depending on market adoption dynamics.

54 ENVIRONMENTAL SCIENCES↗

Thermal Management for Planar Package Power Electronics (CRADA Final Report)

The National Renewable Energy Laboratory (NREL) and John Deere Electronic Solutions (JDES) collaborated to develop and evaluate computer models and simulations related to the thermal performance of semiconductor device packaging for an inverter of an off-road vehicle ("Semiconductor Packaging"). The objective of the research was for NREL and JDES to develop a two or three-dimensional computer-aided design model of the Semiconductor Packaging ("Computer Model") for thermal performance evaluation in a simulation. The project developed computer models of a Semiconductor Package of silicon-carbide semiconductor devices with appropriate thermal dissipation via one or more of the following thermal features: a double-sided planar cooling configuration, an air-cooled configuration, a liquid-cooled configuration for off-road inverter applications in a relevant simulated operating environment. It is noted that surface area and prototype product embodiment consisting of air-cooled and liquid-cooled configurations may and may not be in direct contact with power semiconductor chips. The idea was to explore and develop packaging and thermal management technology for power semiconductors that was most effective in the performance yet had least burden in overall product cost for a given application.

33 ADVANCED PROPULSION SYSTEMS↗