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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths

The dream of achieving a universal memory that can provide robust non-volatile memory states along with low-energy operation has been the key driving force of memory research. Despite dominating the memory market, conventional charge-based memories cannot satisfy these requirements. However, UltraRAM, an oxide-free charge-based memory cell, aims to achieve both of these requirements. This device achieves non-volatility (with an endurance of over 10 7 cycles and a retention of over 1000 years) along with switching at low-voltage (±2.3 V) utilizing a triple-barrier resonant tunneling (TBRT) structure made of InAs/AlSb. In this work, we propose an array design for UltraRAM-based memory devices. Our proposed memory array features separate read-write path and eliminates the possibility of accidentally switching the memory states stored in the array. Moreover, our design allows us to read all the cells in a column in one cycle without imposing any limit on the scalability. Besides, since the read operation in our proposed design is independent of the write mechanism, there is flexibility to optimize the read operation for memory and in-memory computing applications.

Alam, Shamiul↗
DOE OSTI2022

Tolerating memory stack failures in multi-stack systems

Memory management circuitry and processes operate to improve reliability of a group of memory stacks, providing that if a memory stack or a portion thereof fails during the product's lifetime, the system may still recover with no errors or data loss. A front-end controller receives a block of data requested to be written to memory, divides the block into sub-blocks, and creates a new redundant reliability sub-block. The sub-blocks are then written to different memory stacks. When reading data from the memory stacks, the front-end controller detects errors indicating a failure within one of the memory stacks, and recovers corrected data using the reliability sub-block. The front-end controller may monitor errors for signs of a stack failure and disable the failed stack.

Mappouras, Georgios↗
DOE OSTI2025

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗
DOE OSTI2022

Lossless Quantum Hard-Drive Memory Using Parity-Time Symmetry

We theoretically studied the feasibility of building a long-term read-write quantum memory using the principle of parity-time (PT) symmetry, which has already been demonstrated for classical systems. The design consisted of a two-resonator system. Although both resonators would feature intrinsic loss, the goal was to apply a driving signal to one of the resonators such that it would become an amplifying subsystem, with a gain rate equal and opposite to the loss rate of the lossy resonator. Consequently, the loss and gain probabilities in the overall system would cancel out, yielding a closed quantum system. Upon performing detailed calculations on the impact of a driving signal on a lossy resonator, our results demonstrated that an amplifying resonator is physically unfeasible, thus forestalling the possibility of PT-symmetric quantum storage. Our finding serves to significantly narrow down future research into designing a viable quantum hard drive.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

UltraLiM: In-Memory Boolean Logic Architecture Using UltraRAM

Conventional computing architectures encounter ‘von Neumann’ and ‘memory wall’ bottlenecks which arise due to the back-and-forth data movement between the physically separate memory and processing units and the speed mismatch between them, respectively. These bottlenecks hurt both energy efficiency and the throughput of computing systems. To address these challenges, in-memory computing architectures have emerged as a promising alternative. They reduce the need for frequent data movement by executing different computing tasks inside the memory system. Here, we present UltraLiM, a logic-in-memory architecture using the UltraRAM-based memory system. UltraRAM holds the promise of developing a ‘universal memory’, overcoming the limitations of charge-based memories thanks to their non-volatile behavior with lower operating voltage. This work presents an in-memory computing architecture that integrates an UltraRAM-based memory array with a custom-designed peripheral circuitry. With this architecture, we can perform various in-memory Boolean logic operations (such as NOT, NAND, NOR, and XOR) in a single cycle. Leveraging the separate read-write paths in the UltraRAM-based memory array, we optimize read operations without encountering design conflicts. This optimization enhances the sense margin, enabling the use of simpler peripheral circuitry for in-memory logic operations.

Alam, Shamiul [University of Tennessee, Knoxville ↗
DOE OSTI2025

G4VG

G4VG reads the in-memory Geant4 geometry (the volume hierarchy and physical shape descriptions defined by a user application) and produces an equivalent VecGeom representation. This provides a direct bridge between Geant4 detector descriptions and VecGeom-based applications, eliminating the need for manual export pipelines or specialized GDML workflows. The code is adapted from the Celeritas project and developed as an independent utility for broader reuse.

Johnson, SethR [Oak Ridge National Laboratory] (00↗
DOE OSTI2022

Techniques for storing data to enhance recovery and detection of data corruption errors

Often there are errors when reading data from computer memory. To detect and correct these errors, there are multiple types of error correction codes. Disclosed is an error correction architecture that creates a codeword having a data portion and an error correction code portion. Swizzling rearranges the order of bits and distributes the bits among different codewords. Because the data is redistributed, a potential memory error of up to N contiguous bits, where N for example equals 2 times the number of codewords swizzled together, only affects up to, at most, two bits per swizzled codeword. This keeps the error within the error detecting capabilities of the error correction architecture. Furthermore, this can allow improved error correction and detection without requiring a change to error correcting code generators and checkers.

Mills, Peter↗
DOE OSTI2023

Techniques for storing data to enhance recovery and detection of data corruption errors

Often there are errors when reading data from computer memory. To detect and correct these errors, there are multiple types of error correction codes. Disclosed is an error correction architecture that creates a codeword having a data portion and an error correction code portion. Swizzling rearranges the order of bits and distributes the bits among different codewords. Because the data is redistributed, a potential memory error of up to N contiguous bits, where N for example equals 2 times the number of codewords swizzled together, only affects up to, at most, two bits per swizzled codeword. This keeps the error within the error detecting capabilities of the error correction architecture. Furthermore, this can allow improved error correction and detection without requiring a change to error correcting code generators and checkers.

Mills, Peter↗
DOE OSTI2022

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.

14 SOLAR ENERGY↗
DOE OSTI2023

Liveness as a factor to evaluate memory vulnerability to soft errors

Memory, used by a computer to store data, is generally prone to faults, including permanent faults (i.e. relating to a lifetime of the memory hardware), and also transient faults (i.e. relating to some external cause) which are otherwise known as soft errors. Since soft errors can change the state of the data in the memory and thus cause errors in applications reading and processing the data, there is a desire to characterize the degree of vulnerability of the memory to soft errors. In particular, once the vulnerability for a particular memory to soft errors has been characterized, cost/reliability trade-offs can be determined, or soft error detection mechanisms (e.g. parity) may be selectively employed for the memory. In some cases, memory faults can be diagnosed by redundant execution and a diagnostic coverage may be determined.

Bramley, Richard Gavin↗
DOE OSTI2022

ECRAM Materials, Devices, Circuits and Architectures: A Perspective

Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.

Talin, A. Alec↗
DOE OSTI2025

Benchmarking Operators in Deep Neural Networks for Improving Performance Portability of SYCL

SYCL is a portable programming model for heterogeneous computing, so it is important to obtain reasonable performance portability of SYCL. Towards the goal of better understanding and improving performance portability of SYCL for machine learning workloads, we have been developing benchmarks for basic operators in deep neural networks (DNNs). These operators could be offloaded to heterogeneous computing devices such as graphics processing units (GPUs) to speed up computation. In this paper, we introduce the benchmarks, evaluate the performance of the operators on GPU-based systems, and describe the causes of the performance gap between the SYCL and Compute Unified Device Architecture (CUDA) kernels. We find that the causes are related to the utilization of the texture cache for read-only data, optimization of the memory accesses with strength reduction, use of local memory, and register usage per thread. We hope that the efforts of developing benchmarks for studying performance portability will stimulate discussion and interactions within the community.

Jin, Zheming [ORNL] (ORCID:000000027197780X)↗
DOE OSTI2023

LowFive v1.0

LowFive is a new data transport layer based on the HDF5 data model, for in situ workflows. Executables using LowFive can communicate in situ (using in-memory data and MPI message passing), reading and writing traditional HDF5 files to physical storage, and combining the two modes. Minimal and often no source-code modification is needed for programs that already use HDF5. LowFive maintains deep copies or shallow references of datasets, configurable by the user. More than one task can produce (write) data, and more than one task can consume (read) data, accommodating fan-in and fan-out in the workflow task graph. LowFive supports data redistribution from n producer processes to m consumer processes.

Morozov, Dmitriy↗
DOE OSTI2024

Evaluating Operators in Deep Neural Networks for Improving Performance Portability of SYCL

SYCL is a portable programming model for heterogeneous computing, so it is important to obtain reasonable performance portability of SYCL. Towards the goal of better understanding and improving performance portability of SYCL for machine learning workloads, we have been developing benchmarks for basic operators in deep neural networks (DNNs). These operators could be offloaded to heterogeneous computing devices such as graphics processing units (GPUs) to speed up computation. In this work, we introduce the benchmarks, evaluate the performance of the operators on GPU-based systems, and describe the causes of the performance gap between the SYCL and Compute Unified Device Architecture (CUDA) kernels. We find that the causes are related to the utilization of the texture cache for read-only data, optimization of the memory accesses with strength reduction, shared local memory accesses, and register usage per thread. We hope that the efforts of developing benchmarks for studying performance portability will stimulate discussion and interactions within the community.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗
DOE OSTI2023

Thrifty Array Format (TAF) file specifications

Thrifty Array Foram (TAF) files store numeric data in a binary format, minimizing storage requirements while preserving quick read access. Real data of any size and dimensionality can be stored in this format at varying degrees of numeric precision. Implicit array are associated with each dimension, eliminating the need to explicitly store uniformly-spaced grid vectors. Unlimited text comments may be included with the array for user documentation, and every file begins with a text synopsis of the binary structure. The format is deliberately designed for memory mapping, where portions of the array can be read without loading the entire file at once.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗