SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Compact disk read-only memories (CD-ROMs) of proposed type store digital data in volume holograms instead of in surface differentially reflective elements. Holographic CD-ROM consist largely of parts similar to those used in conventional CD-ROMs. However, achieves 10 or more times data-storage capacity and throughput by use of wavelength-multiplexing/volume-hologram scheme.
Integrated nonvolatile read-write memory with addressing using variable threshold field effect transistor including cell operation, channel shielding and circuit
Transformer-type memory is fault-tolerant array of independent read-only memory units. Information pattern in each unit is written by weaving wires through array of linear (nonswitching) transformers. Presence or absence of a bit is determined by whether a given wire threads or bypasses given transformer.
This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.
Metallic magnetic alloy foil preparation for development of non-destructive readout buffer memory planes using laminated layer technique
Integrated, metal oxide semiconductor memories with nonvolatile and electrically programmable characteristics
A heterodyne readout technique for read-write holographic memory systems that reconstruct a virtual image wavefront is described and demonstrated. The conventionally recorded hologram is illuminated simultaneously with a suitable combination of temporally modulated reference and modified object waves for readout. Best performance is obtained for temporal phase modulation. The coupling of the illuminating wavefronts by the hologram is analyzed.
Read-only digital computer memory utilizing loom to braid information into wire harness
Holographic storage and retrieval using photorefractive media (electro-optic ferroelectric materials), particularly iron-doped lithium niobate with its enhanced sensitivity, are discussed. Refractive index changes induced by exposure to light render the materials useful for read-write memories and read-write memory simulation. Resolution, dark storage time, write and erase times, reversibility, and noise levels of the materials are examined. The laser source, deflection system, hololens, page composer, and detector array of the holographic memory system are described. High SNR and two orders of magnitude improvement in speed are reported over earlier experimental prototypes, but the system is still too slow to meet practical needs.
Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.
The response of iron doped lithium niobate under conditions corresponding to hologram storage and retrieval is described, and the material's characteristics are discussed. The optical sensitivity can be improved by heavy chemical reduction of lightly doped crystals such that most of the iron is in the divalent state, the remaining part being trivalent. The best reduction process found to be reproducible so far is the anneal of the doped crystal in the presence of a salt such as lithium carbonate. It is shown by analysis and simulation that a page-oriented read-write holographic memory with 1,000 bits per page would have a cycle time of about 60 ms and a signal-to-noise ratio of 27 db. This cycle time, although still too long for a practical system, represents an improvement of two orders of magnitude over that of previous laboratory prototypes using different storage media.
The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.
The circuit consists of a digital to analog converter, accumulator, read write memory and UV erasable read only memory. The circuit can convert an analog signal to a digital representation, perform mathematical operations on the digital signal and subsequently convert the digital signal to an analog output. Development software tailored for programming the 2920 is presented.
A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.
At HiTEC2018, NASA Glenn Research Center reported the first demonstration of yearlong 500°C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) junction field effect transistors and resistors (JFET-R). This HiTEC 2021submissionupdateson-going efforts at NASA Glenn spanning two subsequent prototype IC generations “11 and 12” to increase both complexity and durability of these ICs. Increased chip complexities of around 1000 transistors/chip for Gen. 11and near 3000 transistors/chip for Gen. 12 aremade possibleby reductions in minimum layout feature sizes (including resistorwidth shrinkage from 6 μm to 2μm) coupled with enlarged die size (from 3x3 mm to 5x5mm). Gen. 11 ICs electrically tested to date include an 8-bit delta-sigma analog to digital converter (ADC) as well as upscaled random access memory (RAM)and nearly 1 kbit read only memory (ROM). However, Gen. 11 prototype ICs exhibited significantly lower yield and durability than Gen. 10 ICs. Development of revised processing is being investigated towards mitigating these issues in subsequentGen. 12 fabrication runcurrentlyin progress.
Scheme for efficient interconnection makes VLSI design feasible. Concept for fast Viterbi decoder provides for processing of convolutional codes of constraint length K up to 15 and rates of 1/2 to 1/6. Fully parallel (but bit-serial) architecture developed for decoder of K = 7 implemented in single dedicated VLSI circuit chip. Contains six major functional blocks. VLSI circuits perform branch metric computations, add-compare-select operations, and then store decisions in traceback memory. Traceback processor reads appropriate memory locations and puts out decoded bits. Used as building block for decoders of larger K.
The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.
A coarse-positioning instrument is built around a three-axis magnetometer. The magnetometer is of a type that is made of inexpensive hardware and is suitable for use aboard spacecraft orbiting no more than 1,000 km above the surface of the Earth. A data processor programmed with suitable software and equipped with a central processing unit, random-access memory, programmable read-only memory, and interface circuitry for communication with external equipment are added to the basic magnetometer to convert it into a coarse-positioning instrument. Although the instrument was conceived for use aboard spacecraft, it could be useful for navigation on Earth under some circumstances. A major feature of the proposed instrument is an ability to generate a coarse estimate of its position in real time (that is, without start-up delay). Algorithms needed to solve the position equations have been developed. These include algorithms to work around gaps in measurement data that arise from a singularity near the minimum in the magnetic field of the Earth. Some work has been done to develop a prototype of this instrument incorporating a standard three-axis flux-gate magnetometer and a Pentium P-5 (or equivalent) processor with a clock frequency of 120 MHz. Alternatively, the processor could be of the 486 class. A computer model of the instrument has been completed and tested.