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Results for “Reactor Dosimetry”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sources NASA NTRS DOE OSTI

NASA NTRS1979

Fundamentals of heat measurement

Various methods and devices for obtaining experimental data on heat flux density over wide ranges of temperature and pressure are examined. Laboratory tests and device fabrication details are supplemented by theoretical analyses of heat-conduction and thermoelectric effects, providing design guidelines and information relevant to further research and development. A theory defining the measure of correspondence between transducer signal and the measured heat flux is established for individual (isolated) heat flux transducers subject to space and time-dependent loading. An analysis of the properties of stacked (series-connected) transducers of various types (sandwich-type, plane, and spiral) is used to derive a similarity theory providing general governing relationships. The transducers examined are used in 36 types of derivative devices involving direct heat loss measurements, heat conduction studies, radiation pyrometry, calorimetry in medicine and industry and nuclear reactor dosimetry.

Gerashchenko, O. A.↗

NASA NTRS1972

Space radiation studies at the White Sands Missile Range Fast Burst Reactor

The operation of the White Sands Missile Range Fast Burst Reactor is discussed. Space radiation studies in radiobiology, dosimetry, and transient radiation effects on electronic systems and components are described. Proposed modifications to increase the capability of the facility are discussed.

Delapaz, A.↗

NASA NTRS1978

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Simons, M.↗