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Effects of radiation-induced damage on performance of semiconductor devices - surface recombination velocity model
Radiation induced damage to semiconductor surfaces and effect on performance
Experimental studies on semiconductor surface recombination velocity, metal oxide semiconductor capacitors, and deep lying centers in germanium
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The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.
The X-ray and gamma-ray induced decomposition of ammonium perchlorate was studied by optical, transmission, and scanning electron microscopy. This material is a commonly used oxidizer in solid propellents which could be employed in deep-space probes, and where they will be subjected to a variety of radiations for as long as ten years. In some respects the radiation-induced damage closely resembles the effects produced by thermal decomposition, but in other respects the results differ markedly. Similar radiation and thermal effects include the following: (1) irregular or ill-defined circular etch pits are formed in both cases; (2) approximately the same size pits are produced; (3) the pit density is similar; (4) the c face is considerably more reactive than the m face; and (5) most importantly, many of the etch pits are aligned in crystallographic directions which are the same for thermal or radiolytic decomposition. Thus, dislocations play an important role in the radiolytic decomposition process.
Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial post-irradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.
The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.
Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two experiments with 1-meV electrons at fluences as great as 1 x 10(exp 16) cm(exp-2). Several general trends have emerged. Low-band-gap Ge and Ge(0.93)Si(0.07) cells show substantial resistance to radiation-induced damage. The two experiments showed that degradation is less for Al(0.08)Ga(0.92)As cells than for similarly irradiated GaAs cells. Compared to homojunctions, cells with graded-band-gap emitters did not show the additional resistance to damage in the second experiment that had been seen in the first. The thickness of the emitter is a key parameter to limit the degradation in GaAs devices.
A potential limitation to human activity on the lunar surface or in deep space is the exposure of the crew to unacceptably high levels of penetrating space radiations. The radiations of most concerns for such missions are high-energy protons emitted during solar flares, and galactic cosmic rays which are high-energy ions ranging from protons to iron. The development of materials for effective shielding from energetic space radiations will clearly require a greater understanding of the underlying mechanisms of radiation-induced damage in bulk materials. This can be accomplished in part by the detailed spectroscopic characterization of bulk materials that were exposed to simulated space radiations. An experimental data base thus created can then be used in conjunction with existing radiation transport codes in the design and fabrication of effective radiation shielding materials. Electron Paramagnetic Resonance Spectroscopy was proven very useful in elucidating radiation effects in polymers (high performance polymers are often an important components of structural composites).
The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.
Several alloys (Hastelloy X, AISI 347, A-286 bolts, Inconel 718, Al 7039-T63 and Ti-5Al-2.5Sn ELI) were irradiated in liquid nitrogen (140 R) to neutron fluences between 10 to the 17th power and 10 to the 19th power nvt (E greater than 1.0 Mev). After irradiation, tensile properties were obtained in liquid nitrogen without permitting any warmup except for some specimens which were annealed at 540 R. The usual trend of radiation damage typical for materials irradiated at and above room temperature was observed, such as an increase in strength and decrease in ductility. However, the damage at 140 R was greater because this temperature prevented the annealing of radiation-induced defects which occurs above 140 R.
Measured spectral reflectance, evidence obtained from photographs, scanning electron microscopy, and previous work on Surveyor hardware were used to develop an understanding of the observed discoloration and its meaning to future space and lunar operations. Measured reflectance data were analyzed to separate and understand the effects of lunar dust and radiation damage. It was concluded that organic contamination is not a major contributor to the discoloration. Radiation-induced discoloration on the various surfaces was found to be proportional to the degree of solar illumination. Photobleaching of the radiation damage was observed and was responsible for a gradual change in the color of the camera's surface during the evaluation.
Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.
In the reproductive performance of female braconids striking contrasts were revealed between the results from the actual biosatellite flight and those from experiments when the recovered vehicle was subjected to the forces of simulated launching and recovery. Second week decreases in egg production due to the radiation damage of cells in mitosis were minimized for the females irradiated during space flight. It was demonstrated that females irradiated for two days during orbital flight laid as many eggs during the second week as the unirradiated ground-based controls. After the 10th day their oviposition records exceeded control values. The hatchability of eggs deposited by Biosatellite II females was excellent. Explanations were sought for the space flight's cancellation of the characteristic radiation-induced decrease in egg production, and for the exceptionally good hatchability of eggs derived from most of the cell types in the irradiated ovarioles. Eggs from only two classes of cells showed enhanced embryonic lethality: those poised in meiotic metaphase during their mother's orbital flight, and those from oocytes beginning vitellogenesis.
A silica glass window from Apollo 12 CM and a piece of flint glass from the Surveyor 3 camera filter were examined for Fe nuclei tracks. A large difference between observed and predicted track densitites was found. At low rigidity (or energy), the solar particle Fe/He ratio is much higher than the photospheric abundance ratio, but decreases with increasing rigidity until it approaches the photospheric value at a rigidity of about 500 MV. It is felt that the low-energy Fe tracks are of solar origin. The implications that heavy nuclei can be preferentially emitted from a source of energetic particles are discussed. Other conclusions are the following: Rocks exposed on the lunar surface for 10 million yr would accumulate about 6 x 10 to the 12th power tracks/sq cm, and the rate of radiation-induced erosion is about 10 to the -9 cm/yr. The lunar soil should contain heavily irradiated small grains, some with track densities of about 10 to the 12th power/sq cm that have flaked from radiation-damaged rock surfaces and some that were irradiated while at the top of the soil layer.
In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.