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Electron radiation effects on silver-zinc cells
Electron radiation effects on cellophane separator in silver-zinc cells
Absorbed dose thresholds and absorbed dose rate limitations for studies of electron radiation effects on polyetherimides
The threshold values of total absorbed dose for causing changes in tensile properties of a polyetherimide film and the limitations of the absorbed dose rate for accelerated-exposure evaluation of the effects of electron radiation in geosynchronous orbit were studied. Total absorbed doses from 1 kGy to 100 MGy and absorbed dose rates from 0.01 MGy/hr to 100 MGy/hr were investigated, where 1 Gy equals 100 rads. Total doses less than 2.5 MGy did not significantly change the tensile properties of the film whereas doses higher than 2.5 MGy significantly reduced elongation-to-failure. There was no measurable effect of the dose rate on the tensile properties for accelerated electron exposures.
Electron radiation effects on the thermal expansion of graphite/resin composites
The effects of 1 MeV electron radiation on the thermal expansion characteristics of two graphite reinforced resin matrix composite systems were studied. Specimens of both graphite/epoxy (T300/5208) and graphite/polyimide (C6000/PMR15) were irradiated to a total dose of 6 x 10 to the 9th rads at two different rates. Dynamic mechanical analyses (DMA) were performed to study changes in resin chemistry. Thermal expansion results indicate that radiation did produce permanent residual strains of up to -70 x 10 to the -6th for the graphite/epoxy when exposed to temperatures up to +280 F. However, no permaanent changes in the coefficient of thermal expansion (CTE) were observed. No permanent residual strains or changes in the CTE attributable to radiation were observed for the graphite/polyimide specimens. DMA results indicate that electron radiation caused chemical changes in the epoxy matrix. These changes resulted in a lower glass transition temperature and broader 'rubbery region' which extended into the temperature range of the thermal expansion tests.
Effects of electron radiation on unijunction transistors
Electron radiation effects on terminal characteristics of unijunction transistors
Electron-radiation effects on the ac and dc electrical properties and unpaired electron densities of three aerospace polymers
The effects of gigarad-level total absorbed doses from 1-MeV electrons on the post-irradiation alternating-current (ac) and direct-current (dc) electrical properties and the unpaired electron densities have been studied for Kapton, Ultem, and Mylar. The unpaired electron densities (determined from electron paramagnetic resonance spectroscopy) and the dc electrical conductivities of the irradiated materials were monitored as functions of time following the exposures to determine their decay characteristics at room temperature. The elevated-temperature ac electrical dissipations of the Ultem and Mylar were affected by the radiation. The dc conductivity of the Kapton increased by five orders of magnitude, while the dc conductivities of the Ultem and Mylar increased by less than an order of magnitude, due to the radiation. The observed radiation-generated changes in the ac electrical dissipations are explained in terms of known radiation-generated changes in the molecular structures of the three materials. A preliminary model relating the dc electrical conductivity and the unpaired electron density in the Kapton is proposed.
Electron radiation effects on time-dependent dielectric breakdown in SiO2 films
An experiment testing the effect of ionizing radiation on breakdown characteristics of SiO2 films is presented. Silicon wafers were oxidized and metallized, and a capacitor array was etched into a control sample while the rest were first irradiated with 1 MeV electrons and then etched. Time-dependent dielectric tests were made on all the capacitors, and the average characteristics of 96 capacitors are illustrated graphically. The curves are consistent with the model of holes trapped in the SiO2 film during irradiation leading to a retarding field for positive ion emission and drift toward the interface. It is shown how an externally applied field is reduced by the trapped charge, and that changes in the dielectric breakdown properties of the SiO2 film after irradiation depend on the positive trapped charge near the metal interface.
Electron Radiation Effects on Candidate Solar Sail Material
Solar sailing is a unique form of propulsion where a spacecraft gains momentum from incident photons. Solar sails are not limited by reaction mass and provide continual acceleration, reduced only by the lifetime of the lightweight film in the space environment and the distance to the Sun. Once thought to be difficult or impossible, solar sailing has come out of science fiction and into the realm of possibility. Any spacecraft using this propulsion method would need to deploy a thin sail that could be as large as many kilometers in extent. The availability of strong, ultra lightweight, and radiation resistant materials will determine the future of solar sailing. The National Aeronautics and Space Administration's (NASA) Marshall Space Flight Center (MSFC) is concentrating research into the utilization of ultra lightweight materials for spacecraft propulsion. The Space Environmental Effects Team at MSFC is actively characterizing candidate solar sail material to evaluate the thermo-optical and mechanical properties after exposure to space environmental effects. This paper will describe the irradiation of candidate solar sail materials to energetic electrons, in vacuum, to determine the hardness of several candidate sail materials.
Electron radiation effects on the thermal expansion of graphite resin composites
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Study Of Radiation Effects Electronics at Atmospheric Altitudes
A test bed for the in situ evaluation of electronic devices for high altitude aircraft was developed. A prototype of the test bed, suitable for operation on a research aircraft, was built and readied for ground tests. The principle investigator established a working relationship with the Project APEX team at Dryden with the intent of flying the test bed "piggyback" on an Project APEX balloon in 1998. Contact was also established with NASA contractors charged with operating the ER-2 aircraft now at Dryden.
Effect of electron radiation on silicon nitride insulated gate field effect transistors.
Electron radiation stability of silicon nitride insulated gate FET with passivation layers and heat treatment, noting contamination effects
Effect of electron radiation on tv lens components
Electron radiation bombardment effect on optical properties of Nimbus satellite television camera lens
Radiation effects on electronic parts
A search of literature concerning the long term effects of nuclear radiation on electronic parts was conducted to determine the effects of radiation fields encountered on deep space missions to parts used in the Pioneer Spacecraft. Topics discussed include: the various types of radiation the spacecraft will encounter, effects of radiation on electronic parts, and estimates of the damage thresholds for transistors and integrated circuits used on the Pioneer Spacecraft.
Study of proton radiation effects on solar vehicle electronic system
Radiation effects on electronic equipment of solar spacecraft - shielding requirements
Effects of low energy protons and high energy electrons on silicon
Low energy proton and high energy electron radiation effects on silicon solar cells
Electron radiation damage effects in silicon surface-barrier detectors
Electron radiation bulk damage effects on Si surface barrier detectors, determining reverse leakage current density and alpha particle response changes
Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects
Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.
Assurance Against Radiation Effects on Electronics
Contents include the following: The Space Radiation Environment. The Effects on Electronics. The Environment in Action. NASA Approaches to Commercial Electronics: the mission mix, flight projects, and proactive research. Final Thoughts: atomic interactions, direct ionization, interaction with nucleus.