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JPL Radiation Effects Facilities
Radiation Effects Group investigates the effects of space radiation on present and future microelectronic and optoelectronic technologies, evaluate the risk of using them in specific space missions, and recommend component and design techniques for JPL and NASA programs to reduce reliability risk from space radiation.
A summary of radiation effects thresholds
Radiation effects thresholds of electronic equipment and structural materials - metals, polymers, ceramics, semiconductors, and electric components
What Reliability Engineers Should Know about Space Radiation Effects
Space radiation in space systems present unique failure modes and considerations for reliability engineers. Radiation effects is not a one size fits all field. Threat conditions that must be addressed for a given mission depend on the mission orbital profile, the technologies of parts used in critical functions and on application considerations, such as supply voltages, temperature, duty cycle, and redundancy. In general, the threats that must be addressed are of two types-the cumulative degradation mechanisms of total ionizing dose (TID) and displacement damage (DD). and the prompt responses of components to ionizing particles (protons and heavy ions) falling under the heading of single-event effects. Generally degradation mechanisms behave like wear-out mechanisms on any active components in a system: Total Ionizing Dose (TID) and Displacement Damage: (1) TID affects all active devices over time. Devices can fail either because of parametric shifts that prevent the device from fulfilling its application or due to device failures where the device stops functioning altogether. Since this failure mode varies from part to part and lot to lot, lot qualification testing with sufficient statistics is vital. Displacement damage failures are caused by the displacement of semiconductor atoms from their lattice positions. As with TID, failures can be either parametric or catastrophic, although parametric degradation is more common for displacement damage. Lot testing is critical not just to assure proper device fi.mctionality throughout the mission. It can also suggest remediation strategies when a device fails. This paper will look at these effects on a variety of devices in a variety of applications. This paper will look at these effects on a variety of devices in a variety of applications. (2) On the NEAR mission a functional failure was traced to a PIN diode failure caused by TID induced high leakage currents. NEAR was able to recover from the failure by reversing the current of a nearby Thermal Electric Cooler (turning the TEC into a heater). The elevated temperature caused the PIN diode to anneal and the device to recover. It was by lot qualification testing that NEAR knew the diode would recover when annealed. This paper will look at these effects on a variety of devices in a variety of applications. Single Event Effects (SEE): (1) In contrast to TID and displacement damage, Single Event Effects (SEE) resemble random failures. SEE modes can range from changes in device logic (single-event upset, or SEU). temporary disturbances (single-event transient) to catastrophic effects such as the destructive SEE modes, single-event latchup (SEL). single-event gate rupture (SEGR) and single-event burnout (SEB) (2) The consequences of nondestructive SEE modes such as SEU and SET depend critically on their application--and may range from trivial nuisance errors to catastrophic loss of mission. It is critical not just to ensure that potentially susceptible devices are well characterized for their susceptibility, but also to work with design engineers to understand the implications of each error mode. -For destructive SEE, the predominant risk mitigation strategy is to avoid susceptible parts, or if that is not possible. to avoid conditions under which the part may be susceptible. Destructive SEE mechanisms are often not well understood, and testing is slow and expensive, making rate prediction very challenging. (3) Because the consequences of radiation failure and degradation modes depend so critically on the application as well as the component technology, it is essential that radiation, component. design and system engineers work togetherpreferably starting early in the program to ensure critical applications are addressed in time to optimize the probability of mission success.
Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings
The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
NASA Facility for the Study of Space Radiation Effects
Space particulate radiation from the Van Allen belts, solar flares, galactic cosmic, and manmade sources have energies and fluxes which are capable of producing damage in space mission payloads. NASA - Langley Research Center, Hampton, Virginia, has initiated the construction of a ground-based Space Radiation Effects Laboratory which simulates most of the space particulate energy spectrum and which can be used in a radiation research program for minimizing or eliminating deleterious radiation effects. A 600-megaelectronvolt synchrocyclotron of variable energy and electron accelerators from 1 to 10 megaelectronvolts will be included in the laboratory for accelerated testing. The plan of the proposed test areas reflects the latest advances in the state of the art as it pertains to the engineering and basic experimental requirements in flexibility, radiation background levels, shielding, and isolation. The laboratory operational plan permits three Virginia institutions of higher learning to cooperate with the Langley Research Center in carrying out radiation programs.
NASA Space Radiation Effects Laboratory
Space radiation effects laboratory for simulation of particulate space radiation - NASA program
Microcircuit radiation effects databank
Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.
1988 IEEE Annual Conference on Nuclear and Space Radiation Effects, 25th, Portland, OR, July 12-15, 1988, Proceedings
The effects of nuclear and space radiation on the performance of electronic devices are discussed in reviews and reports of recent investigations. Topics addressed include the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, sensors in and for radiation environments, EMP/SGEMP/IEMP phenomena, radiation effects on isolation technologies, and spacecraft charging and space radiation effects. Consideration is given to device radiation effects and hardening, hardness assurance and testing techniques, IC radiation effects and hardening, and single-event phenomena.
Fate of Earth Microbes on Mars -- UV Radiation Effects
A radiative transfer model is used to quantitatively investigate aspects of the martian ultraviolet radiation environment. Biological action spectra for DNA inactivation are used to estimate biologically effective irradiances for the martian surface under cloudless skies. Although the present-day martian UV flux is similar to early earth and thus may not be a limitation to life in the evolutionary context, it is a constraint to an unadapted biota and will rapidly kill spacecraft-borne microbes not covered by a martian dust layer. Here calculations for loss of microbial viability on the Pathfinder and Polar lander spacecraft are presented and the effects of martian dust on loss of viability are discussed. Details of the radiative transfer model are presented.
Fate of Earth Microbes on Mars: UV Radiation Effects
A radiative transfer model is used to quantitatively investigate aspects of the martian ultraviolet radiation environment. Biological action spectra for DNA inactivation are used to estimate biologically effective irradiances for the martian surface under cloudless skies. Although the present-day martian UV flux is similar to early earth and thus may not be a limitation to life in the evolutionary context, it is a constraint to an unadapted biota and will rapidly kill spacecraft-borne microbes not covered by a martian dust layer. Here calculations for loss of microbial viability on the Pathfinder and Polar lander spacecraft are presented and the effects of martian dust on loss of viability are discussed. Details of the radiative transfer model are presented.
1987 Annual Conference on Nuclear and Space Radiation Effects, Snowmass Village, CO, July 28-31, 1987, Proceedings
Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.
1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings
The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.
Radiation Effects Considerations for Instrumentation and Control in Space Nuclear Systems
Radiation effects in electrical, electronic, electro-motive, and electro-optical (EEEE) hardware encompass a complex variety of interactions, processes, environments, and an evolving landscape of relevant hardware. Appropriately mitigating the effects of radiation in sensors, data acquisition, and control hardware is among the most significant challenges associated with deploying space nuclear power and propulsion systems. The expertise within EEEE radiation effects disciplines require working knowledge that is at least as complex and diverse as the problem itself, but that should not dissuade stakeholders and engineers in adjacent disciplines from attempting to understand the general principles associated with the problem at hand. This brief overview seeks to bring to the foreground a set of relevant topics that are of special importance for space nuclear propulsion applications that involve high rates of neutron and gamma radiation. The unique set of environments and design requirements for space nuclear systems mean that the experience and utility for methods applied to typical spaceflight hardware or terrestrial nuclear systems must not be applied naively. Forward consideration on the applicability of testing methods applied to either existing or bespoke hardware is likely to drive early decisions on system-wide radiation effects mitigation strategies, and will influence procurement requirements for providers of radiation tolerant hardware who are unlikely to have experience in this unique set of environments. Radiation hardness assurance (RHA) guidance should be adapted and emphasize the importance of hardware testing in the relevant environment. These must consider the combined effects of temperature, total ionizing dose (TID), non-ionizing/displacement damage (TNID/DD), and single event effects (SEE), and should consider the impacts of flux (rate) in addition to cumulative effects.
Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings
Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.
Radiation effects on semiconducting materials
Radiation effects on semiconductor materials
Transient radiation effects on thermocouples
Transient radiation effects on reactor thermocouples