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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
NASA NTRS1982

Radiation damage

The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences.

Weinberg, I.↗
DOE OSTI2025

Monte Carlo simulation analysis for radiation damage on Glidcop Al-15 caused by 17-20 MeV/u heavy ions

The Facility for Rare Isotope Beams (FRIB) SRF linear heavy-ion accelerator is designed to accelerate all ions up to uranium to a maximum beam power of 400 kW. Several beam intercepting devices (BIDs) are essential to the successful operation of the accelerator, including a low power charge selector (LPCS) made of copper containing 0.15% precipitated aluminum oxide by weight called Glidcop Al-15. As FRIB ramps up the primary beam power beyond the current 20 kW level, the charge selector must withstand higher radiation damage rates, typically measured in displacements per atom (dpa). Significant beam induced radiation damage including significant deformation, like swelling, blistering, and cracking has been observed on a recently removed LPCS. We also observed physical features up to about 5.5 mm wide and appear to be deeper than the projected range of any ions. This paper presents the results of Monte Carlo simulations carried out using the Particle and Heavy Ion Transport code System (PHITS), quantifying the total damage dose and ion concentration, etc. Simulating an accurate irradiation history is essential to determining the scope of post irradiation examination (PIE) work.

Fletcher, Ethan [Michigan State U.]↗
NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗
NASA NTRS1981

Enhanced annealing of GaAs solar cell radiation damage

Solar cells are degraded by radiation damage in space. Investigations have been conducted concerning possibilities for annealing this radiation damage in GaAs solar cells, taking into account the conditions favoring such annealing. It has been found that continuous annealing as well as the combination of injection annealing with thermal annealing can lead to recovery from radiation damage under particularly favorable conditions in GaAs solar cells. The damage caused by both electrons and protons in GaAs solar cells can be substantially reduced by annealing at temperatures as low as 150 C, under appropriate conditions. This possibility makes the GaAs solar cells especially attractive for long space missions, or for missions in severe radiation environments. Attention is given to results concerning periodic thermal annealing, continuous annealing, and injection annealing combined with thermal annealing.

Loo, R.↗
NASA NTRS1989

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗
NASA NTRS1999

Future Radiation Damage in Space due to South Atlantic Anomaly

Predictions of radiation damage for Low Earth Orbit (LEO) satellites now use semi-empirical models developed from prior satellite data. From these models it is clear that the low field strength of the South Atlantic Anomaly (SAA) controls where the maximum radiation damage occurs. One may make an estimate of future radiation damage to LEO spacecraft if one can predict the future of the SAA. Although reliable maps of the geomagnetic field strength and its secular change have only been made in the last few decades, certain geomagnetic observatories in South America and Africa have recorded the geomagnetic field for a much longer time. These observatories show that the present geomagnetic field change has persisted for more than 100 years. In spite of the fact that a few observatories have shown sudden changes in secular variation, those around the SAA have shown a stable secular variation. Assuming that this will continue for the next 50 to 100 years one can show that the SAA will expand to cover most of the South Atlantic Ocean and will become much weaker. This will greatly intensify the radiation hazard in LEO, put significant new limitations on radiation-hardened hardware, severely restrict the length of time that humans can remain in orbit, and materially change the configuration of the radiation belts.

Heirtzler, J. R.↗
NASA NTRS1980

Space solar cells - High efficiency and radiation damage

The proceedings of the Third Solar Cell High Efficiency and Radiation Damage Meeting are outlined. The topics covered included high efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance, and 30 percent conversion devices. The study of radiation damage from a fundamental defect-centered basis is discussed and evaluated as a focus of future work. 18% AM0 efficiency and 0.7 V open-circuit voltages are designated as achievable goals for silicon solar cells, and the potential for 30% AM0 efficiencies from monolithic tandem cell designs without sunlight concentration is noted. In addition to its potential for 20% AM0 efficiencies, the GaAs cell offers the possibility of a radiation-insensitive power supply when operated at temperatures near 200 C.

Brandhorst, H. W., Jr.↗