Retrospective dosimetry at the natural background level with commercial surface mount resistors
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Hayes, Robert B. (ORCID:0000000161354070)↗
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Results for “RESISTORS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks
This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of {approx}1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm{sup 3} liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by {approx}0.4 C which produces a 0.7% change in resistance. The typical cooling rate is {approx}0.4 C per minute which results in {approx}0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic is minimized while still offering the desired low temperature coefficient of resistance compared to sodium thiosulfate. The characterization experiments and comparison with the sodium thiosulfate liquid resistors will be fully discussed and the final design described.
42 ENGINEERING↗
The characterisation of lead-free thick-film resistors on different low temperature Co-fired ceramics substrates
Graphical abstract: Display Omitted Highlights: ► Lead free thick film resistors based on ruthenium oxide were developed. ► The compatibility of resistors with different LTCC substrates was evaluated. ► The interactions between resistors and glassy LTCC substrates were not detected. ► Electrical characteristics were comparable with commercial thick film resistors. -- Abstract: Lead-free thick-film resistors were synthesised and investigated. The thick-film resistor materials with nominal sheet resistivities from 50 ohm/sq. to 50 kohm/sq. were prepared using combinations of two lead-free glasses with reflow temperatures at 940 °C and 1240 °C, respectively, and two RuO{sub 2} powders (fine-grained and coarse-grained RuO{sub 2}). The thick-film resistors were printed and fired on alumina and on low temperature co-fired ceramics substrates and fired at 850 °C and 950 °C. The fired resistors were investigated by X-ray powder diffraction, by scanning electron microscopy and by energy dispersive X-ray analysis. The sheet resistivities, temperature coefficients of resistivity, gauge factors and noise indices were measured.
36 MATERIALS SCIENCE↗
System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors
A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.
36 MATERIALS SCIENCE↗
Irreversible entropy model for damage diagnosis in resistors
We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
TaN resistor process development and integration.
This paper describes the development and implementation of an integrated resistor process based on reactively sputtered tantalum nitride. Image reversal lithography was shown to be a superior method for liftoff patterning of these films. The results of a response surface DOE for the sputter deposition of the films are discussed. Several approaches to stabilization baking were examined and the advantages of the hot plate method are shown. In support of a new capability to produce special-purpose HBT-based Small-Scale Integrated Circuits (SSICs), we developed our existing TaN resistor process, designed for research prototyping, into one with greater maturity and robustness. Included in this work was the migration of our TaN deposition process from a research-oriented tool to a tool more suitable for production. Also included was implementation and optimization of a liftoff process for the sputtered TaN to avoid the complicating effects of subtractive etching over potentially sensitive surfaces. Finally, the method and conditions for stabilization baking of the resistors was experimentally determined to complete the full implementation of the resistor module. Much of the work to be described involves the migration between sputter deposition tools - from a Kurt J. Lesker CMS-18 to a Denton Discovery 550. Though they use nominally the same deposition technique (reactive sputtering of Ta with N{sup +} in a RF-excited Ar plasma), they differ substantially in their design and produce clearly different results in terms of resistivity, conformity of the film and the difference between as-deposited and stabilized films. We will describe the design of and results from the design of experiments (DOE)-based method of process optimization on the new tool and compare this to what had been used on the old tool.
36 MATERIALS SCIENCE↗
Breakdown voltage of metal-oxide resistors in liquid argon
We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Experimental study on the role of a resistor in the filter of Hall thrusters
A filter is a mainly component applied to reduce the discharge current low frequency oscillation in the range of 10-100 kHz. The only form of the filter in actual use involves RLC networks, whose design originates from the 1970s, but even now, researchers are unaware of the actual primary motivations for the resistor's presence [S. Barral et al., AIAA Paper 2008-4632, 2008]. Therefore, the role of the resistor in the filter is experimentally studied and discussed through the analysis of control system and electric circuit theory. Experimental results and analysis indicate that the presence of a resistor makes the filter having the phase compensation function. The proper phase-angle and amplitude provided by the filter would increase or decrease the ion mobility and be helpful to balance the ion production in the discharge channel and then to decrease the fluctuation of the plasma density and lower the low frequency oscillation.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors
We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at high voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Electrohydrodynamic printing of organic polymeric resistors on flat and uneven surfaces
In materials printing applications, the ability to generate fine droplets is critical for achieving high-resolution features. Other desirable characteristics are high print speeds, large stand-off distances, and minimal instrumentation requirements. In this work, a tunable electrohydrodynamic (EHD) printing technique capable of generating micron-sized droplets is reported. This method was used to print organic resistors on flat and uneven substrates. These ubiquitous electronic components were built using the commercial polymer-based conductive ink poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), which has been widely used in the manufacturing of organic electronic devices. Resistors with widths from 50 to 500 μm and resistances from 1 to 70 Ω/μm were created. An array of emission modes for EHD printing was identified. Among these, the most promising is the microdripping mode, where droplets 10 times smaller than the nozzle's inner diameter were created at frequencies in excess of 5 kHz. It was found that the ink flow rate, applied voltage, and stand-off distance all significantly influence the droplet generation frequency. In particular, the experimental results reveal that the frequency increases nonlinearly with the applied voltage. The non-Newtonian shear thinning behavior of PEDOT:PSS strongly influenced the droplet frequency. Finally, the topology of a 3-dimensional target substrate had a significant effect on the structure and function of a printed resistor.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply
For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.
43 PARTICLE ACCELERATORS↗
Solid-state resistor for pulsed power machines
A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.
36 MATERIALS SCIENCE↗
Effective conductivity of particulate polymer composite electrolytes using random resistor network method
The effective DC conductivity of particulate composite electrolytes was obtained by solving electrostatics equations using random resistors network method in three dimensions. The composite structure was considered to consist of three phases: matrix, particulate filler, and conductive shell that surrounded each particle; each phase possessing a different conductivity. Different particle size distributions were generated using Monte Carlo simulations. Unlike effective medium formulations, it was shown that the random resistors network method was able to predict percolation thresholds for the effective composite conductivity. It was found that the mean particle radius has a higher influence on the effective composite conductivity compared to the effect of type of the particle size distributions that were considered. The effect of the shell thickness on the composite conductivity has been investigated. It was found that the conductivity enhancement due to the presence of the conductive shell phase becomes less evident as the shell thickness increases.
36 MATERIALS SCIENCE↗
Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
PSL-AC-CP-1102-004-03: Electrostatic Discharge Simulator Kit Model 930D and Associated Current-Viewing Resistor (V.04)
This document provides instructions for calibrating the Electro-Tech (ETS) electrostatic discharge (ESD) simulator, Model 930D. The calibration shall meet the ± 5% specification for resistance and capacitance as specified in MIL-STD-331C 2009 newer. A series of direct measurements of the Device Under Test (DUT) output at 25 kV using a calibrated LeCroy HDO 6104 oscilloscope (or equivalent 1 MΩ) input impedance storage oscilloscope) are recorded through the 500-pF capacitor, 500-Ω resistor, and a 1-Ω Current Viewing Resistor (CVR). The certified value of the DUT's 25 kV output is calculated using Ohms Law and the certified system resistance and capacitance described in this procedure. Read this document in its entirety before proceeding with the calibration.
42 ENGINEERING↗
For current viewing resistor loads
The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.
47 OTHER INSTRUMENTATION↗
Imaginary resistor based Parity-Time symmetry electronics dimers
An approach of fabricating Parity-Time symmetry electronic dimers circuits is demonstrated using an imaginary resistor Z whose impedance is frequency independent. Remarkably, the dynamic rate equations of the coupled oscillators so-called ZRC dimers, uniquely consist of first order partial differential equations which result in a 2 ×2 effective Hamiltonians commuting with the joint Parity-Time (PT) operator. The method helps in describing two groups of PT symmetry electronics. The first group has an eigenspectrum that displays a single spontaneous PT transition or a thresholdless (THL) PT transition. The second group is a PT transitionless normal mode spectrum with essentially negative values of capacitors. The dynamics indicate that the system exhibits high frequencies propagation when operation is done before the thresholdless point is reached. The transitionless regime indicates an equilibrium point in the coupling for which the system turns to be conservative regardless the gain/loss values, and beyond which the gain/loss remarkably decays/amplifies wave. In addition, we observe a value of gain/loss above which there is a limitation of signal amplification.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗