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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Comparison between analytical models and finite-difference simulations in transmission-line tap resistors and L-type cross-Kelvin resistors

Approximate analytical models of the transmission-line tap resistor and the cross-Kelvin resistor are compared with computer-simulated pseudo-three-dimensional resistor network models. The analytical formulas are in good agreement with the simulations over a useful range of parameters and are readily applied to the extraction of the contact resistivity and the sheet resistances of the semiconducting layer under and outside the contacts. The extraction procedure, which is easily implemented on a personal computer, is carried out for the case of alloyed AuGeNi/GaAs contacts, illustrating the importance of (1) distinguishing between layer sheet resistance under and outside the contacts and (2) considering two-dimensional current flow in the semiconducting layer.

Scorzoni, Andrea↗
DOE OSTI2011

Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of {approx}1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm{sup 3} liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by {approx}0.4 C which produces a 0.7% change in resistance. The typical cooling rate is {approx}0.4 C per minute which results in {approx}0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic is minimized while still offering the desired low temperature coefficient of resistance compared to sodium thiosulfate. The characterization experiments and comparison with the sodium thiosulfate liquid resistors will be fully discussed and the final design described.

42 ENGINEERING↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
DOE OSTI2012

The characterisation of lead-free thick-film resistors on different low temperature Co-fired ceramics substrates

Graphical abstract: Display Omitted Highlights: ► Lead free thick film resistors based on ruthenium oxide were developed. ► The compatibility of resistors with different LTCC substrates was evaluated. ► The interactions between resistors and glassy LTCC substrates were not detected. ► Electrical characteristics were comparable with commercial thick film resistors. -- Abstract: Lead-free thick-film resistors were synthesised and investigated. The thick-film resistor materials with nominal sheet resistivities from 50 ohm/sq. to 50 kohm/sq. were prepared using combinations of two lead-free glasses with reflow temperatures at 940 °C and 1240 °C, respectively, and two RuO{sub 2} powders (fine-grained and coarse-grained RuO{sub 2}). The thick-film resistors were printed and fired on alumina and on low temperature co-fired ceramics substrates and fired at 850 °C and 950 °C. The fired resistors were investigated by X-ray powder diffraction, by scanning electron microscopy and by energy dispersive X-ray analysis. The sheet resistivities, temperature coefficients of resistivity, gauge factors and noise indices were measured.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

Jhabvala, Murzy↗
NASA NTRSDate not supplied

Evaluation of Automotive Grade Resistors for Space Flight

Over the past decade, electronic, electrical, and electromechanical (EEE) parts for space applications have undergone significant changes, largely driven by CubeSat and commercial space developers pushing the boundaries on the utilization of commercial parts in space. Global product shortages and shipping delays are still impacting space flight project deadlines. Many projects have turned to automotive grade resistors as an alternate to their MIL-SPEC counterparts to fulfill requirements. In addition, automotive grade resistors may offer designers a wider range of parts to consider. A recent NASA study recommended the use of high-volume manufactured commercial components for space applications provided these components show evidence of stringent fabrication controls and thorough reliability monitoring practices [1]. Automotive grade components have stringent qualification requirements per the Automotive Electronic Council (AEC). However, the end user usually does not have insight into the practices the manufacturer may use to reduce/eliminate infant mortality nor for compliance to all datasheet specifications. Screening, Life and Accelerated Life testing on a set of standard automotive-grade chip resistors is proposed to evaluate the reliability of these components. Requirements from both the AEC-Q (Automotive Electronic Council Qualification) and EEE-INST-002 (Instructions for EEE Parts Selection, Screening, Qualification, and Derating) for resistors is compared and discussed. The resistors have been tested by using a modified methodology from EEE-INST-002 to evaluate their reliability for space flight projects. The findings of this study indicate that the underlying degradation mechanisms at rated temperature and power are best represented by power law models with a fitted exponent between 0 and 1. A linear model is more conservative which compensates for potential model uncertainty given the wide range of design and materials used in automotive resistors, while still providing useful long-term resistance drift estimates. No electrical anomalies or failures were observed throughout the 1,000-hour Life Tests other than small in tolerance resistance drift aging. Degradation models were utilized to quantify and extrapolate the long-term resistance drift under operating conditions for the components. The models demonstrated that some automotive-grade resistors are likely to operate 10 years at nominal usage conditions while others might fail earlier.

Zainab Abdullahi↗
NASA NTRSDate not supplied

Evaluation of Automotive Grade Resistors for Space Flight

Over the past decade, electronic, electrical, and electromechanical (EEE) parts for space applications have undergone significant changes, largely driven by CubeSat and commercial space developers pushing the boundaries on the utilization of commercial parts in space. Global product shortages and shipping delays are still impacting space flight project deadlines. Many projects have turned to automotive grade resistors as an alternate to their MILSPEC counterparts to fulfill requirements. In addition, automotive grade resistors may offer designers a wider range of parts to consider. A recent NASA study recommended the use of high-volume manufactured commercial components for space applications provided these components show evidence of stringent fabrication controls and thorough reliability monitoring practices. Automotive grade components have stringent qualification requirements per the Automotive Electronic Council (AEC). However, the end user usually does not have insight into the practices the manufacturer may use to reduce/eliminate infant mortality nor for compliance to all datasheet specifications. Screening, Life and Accelerated Life testing on a set of standard automotive-grade chip resistors is proposed to evaluate the reliability of these components. Requirements from both the AEC-Q (Automotive Electronic Council Qualification) and EEE-INST-002 (Instructions for EEE Parts Selection, Screening, Qualification, and Derating) for resistors is compared and discussed. The resistors have been tested by using a modified methodology from EEEINST-002 to evaluate their reliability for space flight projects. The findings of this study indicate that the underlying degradation mechanisms at rated temperature and power are best represented by power law models with a fitted exponent between 0 and 1. A linear model is more conservative which compensates for potential model uncertainty given the wide range of design and materials used in automotive resistors, while still providing useful long-term resistance drift estimates. No electrical anomalies or failures were observed throughout the 1000-hour Life Tests other than small in tolerance resistance drift aging. Degradation models were utilized to quantify and extrapolate the long-term resistance drift under operating conditions for the components. The models demonstrated that some automotive-grade resistors are likely to operate 10 years at nominal usage conditions while others might fail earlier.

Zainab Abdullahi↗
DOE OSTI2013

System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Irreversible entropy model for damage diagnosis in resistors

We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2007

RF and DC Power Handling Characterization of Thin Film Resistors Embedded on LCP

For the first time, the DC and RF power handling capability of NiCrAlSi thin film resistors on Liquid Crystal Polymer (LCP) is presented. It is shown that there is a maximum power that the resistors can handle without causing degradation of the resistors, and this value is significantly less than the power required for burn out of the resistors. EDAX shows that the resistors fail due to electromigration of Ni and Cr, and migration of C from the LCP.

Ponchak, George E.↗
NASA NTRS2008

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗
DOE OSTI2010

TaN resistor process development and integration.

This paper describes the development and implementation of an integrated resistor process based on reactively sputtered tantalum nitride. Image reversal lithography was shown to be a superior method for liftoff patterning of these films. The results of a response surface DOE for the sputter deposition of the films are discussed. Several approaches to stabilization baking were examined and the advantages of the hot plate method are shown. In support of a new capability to produce special-purpose HBT-based Small-Scale Integrated Circuits (SSICs), we developed our existing TaN resistor process, designed for research prototyping, into one with greater maturity and robustness. Included in this work was the migration of our TaN deposition process from a research-oriented tool to a tool more suitable for production. Also included was implementation and optimization of a liftoff process for the sputtered TaN to avoid the complicating effects of subtractive etching over potentially sensitive surfaces. Finally, the method and conditions for stabilization baking of the resistors was experimentally determined to complete the full implementation of the resistor module. Much of the work to be described involves the migration between sputter deposition tools - from a Kurt J. Lesker CMS-18 to a Denton Discovery 550. Though they use nominally the same deposition technique (reactive sputtering of Ta with N{sup +} in a RF-excited Ar plasma), they differ substantially in their design and produce clearly different results in terms of resistivity, conformity of the film and the difference between as-deposited and stabilized films. We will describe the design of and results from the design of experiments (DOE)-based method of process optimization on the new tool and compare this to what had been used on the old tool.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Breakdown voltage of metal-oxide resistors in liquid argon

We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1983

Sensitive method for characterizing liquid helium cooled preamplifier feedback resistors

It is pointed out that the simple and traditional method of measuring resistance using an electrometer is ineffective since it is limited to a narrow and nonrepresentative range of terminal voltages. The present investigation is concerned with a resistor measurement technique which was developed to select and calibrate the Transimpedance Mode Amplifier (TIA) load resistors on the Infrared Astronomical Satellite (IRAS) for the wide variety of time and voltage varying signals which will be processed during the flight. The developed method has great versatility and power, and makes it possible to measure the varied and complex responses of nonideal feedback resistors to IR photo-detector currents. When employed with a stable input coupling capacitor, and a narrow band RMS voltmeter, the five input waveforms thouroughly test and calibrate all the features of interest in a load resistor and its associated TIA circuitry.

Smeins, L. G.↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Experimental study on the role of a resistor in the filter of Hall thrusters

A filter is a mainly component applied to reduce the discharge current low frequency oscillation in the range of 10-100 kHz. The only form of the filter in actual use involves RLC networks, whose design originates from the 1970s, but even now, researchers are unaware of the actual primary motivations for the resistor's presence [S. Barral et al., AIAA Paper 2008-4632, 2008]. Therefore, the role of the resistor in the filter is experimentally studied and discussed through the analysis of control system and electric circuit theory. Experimental results and analysis indicate that the presence of a resistor makes the filter having the phase compensation function. The proper phase-angle and amplitude provided by the filter would increase or decrease the ion mobility and be helpful to balance the ion production in the discharge channel and then to decrease the fluctuation of the plasma density and lower the low frequency oscillation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗