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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Suprathermal electron transport studies in radio-frequency-heated tokamak plasmas

This contribution reports on the study of suprathermal electron radial transport enhancement in the presence of electron-heating radio-frequency waves, such as electron-cyclotron waves or lower-hybrid waves. Since suprathermal electrons emit hard X-rays from Bremsstrahlung, experimental data from hard X-ray measurements are used to follow their dynamics. In particular, electron-cyclotron power modulation experiments performed in TCV show that this transport depends on the total electron-cyclotron power. These results are corroborated by experimentally constrained Fokker-Planck simulations [J. Cazabonne et al, Plasma Phys. Control. Fusion 65, 104001 (2023)]. Similar experiments have been performed in WEST with lower-hybrid waves, and are reported for the first time. Preliminary analyses show potential evidence of suprathermal electron transport, but no clear dependence on wave power nor photon energy at this stage.

Cazabonne, Jean [CEA, IRFM, Saint Paul Lez Durance↗
DOE OSTI2026

Towards advanced polarized electron sources

Polarized electrons play an important role in high-energy and nuclear physics, and their properties have also been exploited in ultrafast electron microscopy. Currently, gallium arsenide crystals illuminated by circular polarized infrared laser light are commonly used for generating polarized electrons. However, the achievable accelerating voltage and the gradient of these electrostatic sources limit the beam quality and quantity. A solution could be to combine gallium arsenide photocathodes with radio-frequency electron guns, which are capable of accelerating beams with significantly higher gradients and voltage. Here we report the successful operation of a gallium arsenide photocathode in a superconducting radio-frequency gun. Our findings are relevant for future sources of polarized electrons.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Radio Frequency Transients Correlated with Electron Flux Measured On-Board the STP-Sat6

We analyzed transient electromagnetic signatures, referred to as spacecraft environment discharges (SEDs) or on-board discharges (OBDs), and the in-situ particle environment simultaneously measured by the Radio Frequency Sensor (RFS) and the Space and Atmospheric Burst Reporting System Z-plasma spectrometer (SABRS-ZPS), respectively. These sensors are on-board the U.S. Department of Defense Space Test Program Satellite 6 (STP-Sat6) in geostationary orbit. Radio frequency signatures of SEDs on STP-Sat6 have relatively high peak amplitudes; they often caused amplitude-saturation in the so-called high band (120–140 MHz frequency range) of the RFS likely due to the proximity of their source to the RFS’s dipole antennas. We examined the occurrence rate of SEDs reported by the RFS and its temporal relationship to electron flux in the 7.9–12.2 keV range. Peaks in SED count rates were time-correlated with peaks in electron flux. The electron-flux peaks appeared to lead the SED count rate peaks by 24–45 min for the 7.9–12.2 keV energies. This indicates that incidence of electrons at this relatively low-energy range likely resulted in ramping up of the charging of the spacecraft leading to periods of high occurrence rates of discharges in and around the spacecraft.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science↗
DOE OSTI2025

Electron density measurements and calculations in a helium capacitively-coupled radio-frequency plasma

We report a comparison of inferred electron density (n e ) in a He capacitively-coupled plasma, deduced from laser-collision induced fluorescence measurements, with values computed using a hybrid simulation framework based on particle-in-cell/Monte Carlo collisions simulations and a fluid model for excited He atoms. The studies were carried out for gas pressures between 50 mTorr and 1000 mTorr and peak-to-peak radio-frequency (13.56 MHz) voltages between 150 V and 350 V, in a highly symmetric source equipped with plane-parallel electrodes. A good agreement is found between the experimental and modeling results for n e except at the lowest operating voltages and gas pressures. The (effective) electron temperature (T e ) values derived by the two methods agree as well reasonably within the plasma bulk. The simulation results are used to compare the density distributions of He + and various He excited levels and their major populating and de-populating channels at 100 mTorr and 1000 mTorr.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Correlating Surface Processing of Nb Superconducting RF Cavities with the Evolution of Surface Electronic States

Superconducting-radio frequency (RF) cavities provide an efficient way to accelerate particle beams with extremely high acceleration gradients while generating very small power dissipation. The few nanometers of the surface play a critical role in defining the RF performance of superconducting Nb based cavities. Over the past two decades, several pioneering surface treatment and processing methods have emerged, enabling remarkable improvements in superconducting cavity performance by simultaneously achieving high quality factors with increasing maximum acceleration gradients. These processing approaches include chemical polishing, distinct multi-step thermal treatments under ultra-high vacuum (UHV) conditions over low to high temperature regimes, as well as high-temperature treatments under controlled nitrogen atmospheres. Beyond their macroscopic impact on RF performance, these methods produce distinct surface oxide configurations characterized by different valence states, oxide thicknesses, chemical uniformity, and oxygen concentration profiles extending into the near-surface bulk of niobium. In this work, we are trying to understand how the surface-processing methods and the resulting oxide/oxygen profiles affect the electronic structure of surface and the mechanism of superconductivity. Using a combination of X-ray photoemission and X-ray absorption spectroscopies, we investigate how the valence-band structure and the electronic density of states (DoS) near the Fermi level evolve under different surface treatments. By employing tunable photon energies across multiple elemental absorption edges, we use resonant photoemission to disentangle and identify the elemental contributions to specific valence-band features. Our observations show that different surface-processing methods lead to distinct temperature evolutions of the DoS and valence-band states near the Fermi level. Our results suggest variations in different Nb-O orbital hybridizations in distinct processes and point towards the possibility of different underlying mechanisms of superconductivity governed by surface chemistry and oxide configuration. We also correlate these distinct superconducting mechanisms with RF cavity performance, specifically focusing on measured surface resistance, the nature of the Q-slope, and quench fields observed in superconducting RF measurements. These results will enable us to identify the potential limiting factors and relevant controllable parameters that can be further optimized to improve the performance of superconducting RF cavities.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

Machine Learning for Multipactor Susceptibility Prediction in Planar RF Gaps

Multipactor discharge is a nonlinear electron avalanche that limits the performance of high-power radio-frequency (RF) and vacuum electronic devices. Predicting multipactor susceptibility traditionally relies on Monte Carlo or particle-in-cell (PIC) simulations, which become computationally expensive for large parametric studies. In this work, we present a supervised machine-learning (ML) framework for prediction of multipactor susceptibility in a two-surface planar geometry. The models are trained using high-fidelity PIC simulation generated susceptibility data and learn the relationship between operational parameters, geometry, and material-dependent secondary electron emission properties. The proposed approach enables rapid reconstruction of susceptibility charts while preserving the physical structure of multipactor growth regions.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Single-shot ionization-based monitor for pulsed electron beams

In this work, we present an experimental demonstration of a single-shot, nondestructive electron beam diagnostic based on the ionization of a low-density pulsed gas jet. In our study, 7 MeV electron bunches from a radio-frequency photoinjector, carrying up to 100 pC of charge, traversed a localized distribution of nitrogen gas (N 2 ). The interaction of the electron bunches with the N 2 gas generated a correlated signature in the ionized particle distribution, which was spatially magnified using a series of electrostatic lenses and recorded with a microchannel-plate detector. Various modalities, including point-to-point imaging and velocity mapping, are investigated. A temporal trace of the detector current enabled the identification of single- and double-ionization events. The characteristics of the ionization distribution, dependence on gas density, total bunch charge, and other parameters, are described. Approaches to scaling to higher electron bunch density and energy are suggested. Additionally, the instrument proves useful for comprehensive studies of the ionization process itself.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

The fixed probe storage ring magnetometer for the Muon g-2 experiment at Fermi National Accelerator Laboratory

The goal of the FNAL E989 experiment is to measure the muon magnetic anomaly to unprecedented accuracy and precision at the Fermi National Accelerator Laboratory. To meet this goal, the time and space averaged magnetic environment in the muon storage volume must be known to better than 70 ppb. A new pulsed proton nuclear magnetic resonance (NMR) magnetometer was designed and built at the University of Washington, Seattle to track the temporal stability of the 1.45 T magnetic field in the muon storage ring at this precision. It consists of an array of 378 petroleum jelly based NMR probes that are embedded in the walls of muon storage ring vacuum chambers and custom electronics built with readily available modular radio frequency (RF) components. We give NMR probe construction details and describe the functions of the custom electronic subsystems. The excellent performance metrics of the magnetometer are discussed, where after 8 years of operation the median single shot resolution of the array of probes remains at 650 ppb.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Theoretical investigation of plasma wave generation by pulsed electron beams in space

Here, we report theoretical calculations of plasma wave generation in the whistler modes and in the extraordinary modes, by pulsed electron beams in a magnetized plasma. The numerical simulations of the wave generation take into account the longitudinal expansion of the electron beam due to the space charge force and the energy spread. The work presented in this article provides predictions for the wave generation performance of the beam plasma interactions experiment (Beam PIE), where pulsed electron beams were produced by a spaceborne radio frequency (RF) linear accelerator. We also theoretically explore the desirable properties of the pulsed electron beam for future space experiments, which will be the next step toward eventually demonstrating the radiation-belt remediation (RBR).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Machine Learning for Mapping Multipactor Susceptibility in RF Systems: Capabilities and Generalization Constraints

Multipactor is a surface-driven electron avalanche phenomenon that degrades the performance and reliability of radio-frequency (RF) systems in particle accelerator and vacuum electronics applications. Multipactor behavior in a given device structure is conventionally assessed through susceptibility charts, which provide a parameter-space characterization of the instability. In this work, we assess the capabilities of machine-learning (ML) models to learn and predict such susceptibility charts and analyze the constraints governing their generalization across materials. Using a simulation-derived dataset spanning six distinct secondary-electron-yield material profiles in a canonical two-surface planar geometry, we train supervised regression models and artificial neural networks to predict the time-averaged electron growth rate, δavg, across the relevant parameter space. Model performance is evaluated using metrics that explicitly probe the structure of susceptibility charts, including Intersection over Union, Structural Similarity Index, and correlation analysis. Tree-based ensemble models outperform neural-network models in reconstructing susceptibility regions and in generalizing across material domains. Principal-component analysis reveals disjoint material feature distributions, indicating that the piecewise mode structure of multipactor susceptibility is difficult to represent with a single global model and that generalization is constrained by data coverage rather than by model complexity. An exhaustive reduced-coverage study further shows that sparse material-space coverage can yield mean performance in the same general range but producing large variability in the susceptibility-region overlap. These results clarify the capabilities of ML-based surrogate models for parameter-space characterization of multipactor discharge. They also provide guidance for their appropriate use in RF system design.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

First Results from a Nb3Sn-Coated 1.5-Cell 650 MHz SRF Cavity for Cryogen-Free Industrial Accelerators

First Results from a Nb3Sn-Coated 1.5-Cell 650 MHz SRF Cavity for Cryogen-Free Industrial Accelerators ABSTRACT = Fermilab is advancing the development of a compact, high-power electron beam accelerator using superconducting radio frequency (SRF) technology as a non-radioactive alternative to traditional radiological sources. The current design targets continuous-wave (CW) operation at \SI{1.6}{MeV} and \SI{20}{kW}. To ensure suitability for industrial environments, the system is being designed for cryogen-free operation, driving the adoption of a novel Nb$_3$Sn-coated 1.5-cell SRF cavity operating at \SI{650}{MHz}. This contribution reports on the fabrication, surface preparation, and Nb$_3$Sn coating process of the cavity, as well as first results from vertical test stand (VTS) measurements performed in a liquid helium bath. These initial tests mark a key milestone toward demonstrating the viability of conduction-cooled Nb$_3$Sn SRF cavities for industrial-scale deployment.

Tagdulang, N. [Fermilab]↗
DOE OSTI2025

First Results from A $Nb_3Sn$-Coated 1.5-Cell 650MHZ SRF Cavity for Cryogen-Free Industrial Accelerators

Fermilab is advancing the development of a compact, high-power electron beam accelerator using superconducting radio frequency (SRF) technology as a non-radioactive alternative to traditional radiological sources. The current design targets continuous-wave (CW) operation at \SI{1.6}{MeV} and \SI{20}{kW}. To ensure suitability for industrial environments, the system is being designed for cryogen-free operation, driving the adoption of a novel Nb$_3$Sn-coated 1.5-cell SRF cavity operating at \SI{650}{MHz}. This contribution reports on the fabrication, surface preparation, and Nb$_3$Sn coating process of the cavity, as well as first results from vertical test stand (VTS) measurements performed in a liquid helium bath. These initial tests mark a key milestone toward demonstrating the viability of conduction-cooled Nb$_3$Sn SRF cavities for industrial-scale deployment.

Tagdulang, Nikki Diala [Fermilab]↗