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Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.
Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half-maximum is generated and a high repetition rate of more than 3 GHz is obtained.
High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.
Experimetnal fabrication process makes submicron-sized structures of single-crystal metallic CoSi2 on silicon substrates. Amorphous Co:Si(1:2) crystallized by electron beam becoming single-crystal CoSi2. Remaining amorphous Co:Si then preferentially etched away. When fully developed, process used to make fine wires or dots exhibiting quantum confinement of charge carriers.
Zeolites are a class of crystalline aluminosilicate materials that form the backbone of the chemical process industry worldwide. They are used primarily as adsorbents and catalysts and support to a significant extent the positive balance of trade realized by the chemical industry in the United States (around $19 billion in 1991). The magnitude of their efforts can be appreciated when one realizes that since their introduction as 'cracking catalysts' in the early 1960's, they have saved the equivalent of 60 percent of the total oil production from Alaska's North Slope. Thus the performance of zeolite catalysts can have a profound effect on the U.S. economy. It is estimated that a 1 percent increase in yield of the gasoline fraction per barrel of oil would represent a savings of 22 million barrels of crude oil per year, representing a reduction of $400 million in the United States' balance of payments. Thus any activity that results in improvement in zeolite catalyst performance is of significant scientific and industrial interest. In addition, due to their 'stability,' uniformity, and, within limits, their 'engineerable' structures, zeolites are being tested as potential adsorbents to purify gases and liquids at the parts-per-billion levels needed in today's electronic, biomedical, and biotechnology industries and for the environment. Other exotic applications, such as host materials for quantum-confined semiconductor atomic arrays, are also being investigated. Because of the importance of this class of material, extensive efforts have been made to characterize their structures and to understand their nucleation and growth mechanisms, so as to be able to custom-make zeolites for a desired application. To date, both the nucleation mechanics and chemistry (such as what are the 'key' nutrients) are, as yet, still unknown for many, if not all, systems. The problem is compounded because there is usually a 'gel' phase present that is assumed to control the degree of supersaturation, and this gel undergoes a continuous 'polymerization' type reaction during nucleation and growth. Generally, for structure characterization and diffusion studies, which are useful in evaluating zeolites for improving yield in petroleum refining as well as for many of the proposed new applications (e.g., catalytic membranes, molecular electronics, chemical sensors) large zeolites (greater than 100 to 1000 times normal size) with minimum lattice defects are desired. Presently, the lack of understanding of zeolite nucleation and growth precludes the custom design of zeolites for these or other uses. It was hypothesized that the microgravity levels achieved in an orbiting spacecraft could help to isolate the possible effects of natural convection (which affects defect formation) and minimize sedimentation, which occurs since zeolites are twice as dense as the solution from which they are formed. This was expected to promote larger crystals by allowing growing crystals a longer residence time in a high-concentration nutrient field. Thus it was hypothesized that the microgravity environment of Earth orbit would allow the growth of large, more defect-free zeolite crystals in high yield.
A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.
The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.
The intial results of a program aimed at developing low-cost diode laser arrays for use as solid-state laser pumps are reported. MOCVD is used to demonstrate excellent run-to-run reproducibility in emission wavelength, threshold current density, and quantum efficiency. For this first experimental series, J(th) values of approximately 1310 Amps/sq cm were obtained for broad-area unthinned devices from the growth runs. Differential quantum efficiencies of between 41 percent and 47 percent were measured on the non-facet-coated devices from all four runs. Single quantum well, separate confinement heterostructure lasers fabricated from wafers grown in the same MOCVD reactor exhibited near single-mode emission, with J(th) values of approximately 300 Amps/sq cm. Photoluminescence data confirm quantum well widths of 80 A and 150 A for two different MOCVD growth runs.
Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. Multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating were considered. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or to tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.
Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.
The spectral properties of ridge-waveguide graded-index separate-confinement heterostructure single-quantum-well (SQW) GaAs/AlGaAs lasers are measured. Long-cavity lasers (800 microns) exhibit remarkably pure CW single-longitudinal-mode spectra in spite of the short cavity mode spacing. At output power 5 mW, the sidemode suppression exceeds 24 dB and the linewidth is 1.5 MHz. The linewidth-power product (LPP) is 6.4 MHz mW. Measurements of LPP as a function of cavity length L gives a 1/L-squared dependence, in agreement with theory. The results are used to deduce the linewidth enhancement factor alpha at the gain peak wavelength and its dependence on the excitation level. The sublinear gain-carrier density relation in the SQW results in an increase in alpha with increasing carrier density (decreasing cavity length). A decrease in alpha was observed for lasers operating at the second quantized state due to a recovery of the differential gain.
Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.
We describe and analyze a novel approach to implementing an Optical Backplane Interconnect Technology (OBIT) that is capable of optically connecting any row of a 32x32 backplane array to any row of a second 32x32 array. Each backplane array is formed monolithically on a wafer. The technology is based on the use of Grating Surface Emitting (GSE) waveguides formed on a wafer containing quantum-well and separate confinement waveguide layers. These layers are used for transverse guiding, gain, modulation, detection, and for the formation of wavelength tunable distributed-Bragg reflector lasers. The required surface structures are formed photolithographically. The GSE waveguides act as efficient antennae that radiate light at angles selected by tuning the wavelength of the lasers. The same waveguides may be used as the receiving antennae when the array is used in the receiving mode. Thus, wavelength tuning is used to direct each row of the transmitting array to the desired row of the receiving array. In summary: The optical backplane array will have the following characteristics: Any row of a 32x32 GSE array may be optically connected to any row of a second 32x32 array. Only one switch decision is required to switch 32 parallel connections to any one of 32 positions. Each monolithic array can be used as both transmitter and receiver by switching the bias on the quantum-well switch-detectors. Separate transmitting and receiving structures could be provided for duplex operation. For a bit error rate of 10 sup 9 at 100-MHz data rate, a required laser power of 12 mW is calculated based on an estimated total optical loss of 40 dB.
The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.
Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.
The rotational-torsional spectrum of (C-13)H3OH is presented in both the symmetric and degenerate substates of the first two excited torsional states. Of the new transitions reported, 122 lines are from the v(t) = 1 torsional state and 110 lines are from the v(t) = 2 torsional state, and all are confined to the rotational quantum number J = 8 or less. The data are combined with previously reported millimeter and submillimeter data for the v(t) = 0 torsional state and 44 previously measured excited torsional state lines to form a global data set of 596 transitions, which is analyzed and fitted using an extended internal axis method. The fit results in an overall rms deviation of 1.98 MHz. The spectral constants generated by the fit are used to predict an additional 123 lines of (C-13)H3OH in the v(t) = 1,2 excited torsional states with frequencies up to 612 GHz and rotational quantum number J = 11 or less.
Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.