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Pressure-sintering, in which the unfired laminated ferrite plane is placed between two flat punches and pressed during firing, reduces lateral firing shrinkage to less than one percent. A decrease in thickness of the laminate produces the required volume shrinkage. Phlogopite is the most suitable contact material investigated.
Stirred-ball-mill-blended Si3N4 and Al2O3 powders were pressure sintered in order to investigate the mechanism of solid solution formation and densification in the Si3N4-Al2O3 system. Powder blends with Si3N4:Al2O3 mole ratios of 4:1, 3:2, and 2:3 were pressure sintered at 27.6-MN/sq m pressure at temperatures to 17000 C (3090 F). The compaction behavior of the powder blends during pressure sintering was determined by observing the density of the powder compact as a function of temperature and time starting from room temperature. This information, combined with the results of X-ray diffraction and metallographic analyses regarding solutioning and phase transformation phenomena in the Si3N4-Al2O3 system, was used to describe the densification behavior.
Essentially pore-free Sialon bodies were obtained by pressure sintering for three blends (mol ratios of 4:1, 2:3, and 3:2) of Si3N4 and Al2O3 powders under the conditions of 27.6 MN/sq m and a temperature of 1700 C for 2 h. These dense bodies consist mainly of a Sialon solid solution with a minor amount of a particular second phase. The higher the Al2O3 content (20 to 60 mol% range) in Sialon, the higher the densification rate. Fully dense bodies can be obtained at temperatures as low as 1500 C at 27.6 MN/sq m for 2 h with no second phase detectable by X-ray diffraction. A 100% dense body can be obtained by heating at 1700 C at 27.6 MN/sq m without a holding time.
Silicon nitride (Si3N4) is one of candidate materials for the engineering ceramics which is used at high temperatures. The mechanical strengths of hot pressed or sintered Si2N4 ceramics containing some amount of additives, however, are deteriorated at elevated temperatures. To improve the high temperature strength of Si3N4 ceramics, an attempt to consolidate Si3N4 without additives was made by high pressure sintering technique. Scanning electron micrographs of fracture surfaces of the sintered bodies showed the bodies had finely grained and fully self-bonded sintered bodies were 310N sq m at room temperature and 174N/sq m at 1200 C.
Pure materials of AIN, alpha-Si3N4 and TiC, without additives were sintered at 800 C to 1400 C under the pressures of 30 kbar and 50 kbar for 0.5 hours. The maximum density of sintered bodies for the cited materials was nearly 100% for AIN, 98% for TiC and 96% for alpha-Si3N4.
An experiment conducted on beta-sialon in atmospheric pressure, using a temperature of 2000 C and 4 MPa nitrogen atmosphere, is described. Thermal decomposition was inhibited by the increase of the nitrogen gas pressure.
The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.
The effects of N2 pressure (0.1 to 50 MPa) during sintering on the thickness of the microstructurally heterogeneous layer (MHL) formed near the surface of the compact, transverse-rupture strength, were investigated for Si3N4-(10 to 20) mol % MgO-5.5 mol % Al2O3 ceramics. The sintering temperature and time were 1973 K and 3.6 ks, respectively. The N2 gas was introduced into the furnace at about 1273 K. When the compacts were sintered under a certain N2 pressure, for example, about 20 and 7 MPa for 10 and 15 mol% MgO, respectively, the evolutions of N and Si were suppressed. The thickness of the MHL became very small and at the same time the strength of the surface layer of the compact (which was normally less than that of the inside in the case of 0.1 MPa) became nearly the same value as that of the inside. At higher pressure, the strength of both surface layer and the inside decreased considerably. Some discussion was made on these results.
In newly developed technique, titanium vessel filled with gas to exert pressure necessary for sintering. Used in brazing, sintering, and hot forming. Simplifies fabrication of parts having complicated shapes and has potential for variety of applications, including fabrication of heat pipes for high-performance vehicles.
The most suitable SiC mass for injection molding of SiC articles (for subsequent pressureless sintering) consisted of beta SiC 84, a wax mixture 8, and polyethylene or polystyrene 8 parts. The most effective method for adding the binders was by dissolving them in a solvent and subsequent evaporation. The sequence of component addition was significant, and all parameters were optimized together rather than individually.
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Si3 N4 powder (amorphous, alpha-, and beta-Si3 N4) was mixed with MeOH containing 8.87 mol. % H2O and ground. The NH3 generation rapidly increased after a grinding time of 100 hours. Silicon nitride sintered material was chosen as one of the high temperature, high strength structural materials and studies of the control of the raw material powder, preparation of the sintered body (finding the right assistant, hot press, high pressure sintering, fracture toughness and oxidation at high temperature were performed.
A variety of new oxide superconductors were prepared. The crystallographic structures of the oxides were all tetragonal and of the (Ln(+), Ce)4(Ln(+),Ba)4Cu6Oz (Ln(+) = Nd, Sm or Eu) type which had been previously discovered by Akimitsu et al. As the Sr content, y, increased when Ln = Ln(excited state) = Nd, the oxygen content, z, monotonically increased and the superconducting transition temperature, T(sub c), varied exhibiting a maximum. When z was controlled directly by means of high oxygen pressure sintering techniques, T(sub c) was changed accordingly. T(sub c's) of samples with different combinations of Ln and Ln(excited state) and different values of x and y were found to depend on the magnitude of the bond valence sum for a Cu atom located in the bottom plane of the Cu-O5 pyramid. Transport and magnetization measurements were carried out to investigate the magnetic field dependence of superconducting properties and to determine the phenomenological parameters. The Hall coefficients were positive below room temperature and varied yielding a maximum with respect to temperature.
A variety of new oxide superconductors were prepared. The crystallographic structures of the oxides were all tetragonal and of the (Ln(+),Ce)4(Ln(+),Ba)4Cu6Oz (Ln(+) = Nd, Sm or Eu) type which had been previously discovered by Akimitsu et al. As the Sr content, y, increased when Ln = Ln(excited state) = Nd, the oxygen content, z, monotonically increased and the superconducting transition temperature, T sub c, varied exhibiting a maximum. When z was controlled directly by means of high oxygen pressure sintering techniques, T sub c was changed accordingly. T sub c's of samples with different combinations of Ln and Ln(excited state) and different values of x and y were found to depend on the magnitude of the bond valence sum for a Cu atom located in the bottom plane of the Cu-O5 pyramid. Transport and magnetization measurements were carried out to investigate the magnetic field dependence of superconducting properties and to determine the phenomenological parameters. The Hall coefficients were positive below room temperature and varied yielding a maximum with respect to temperature.
Full-density Si3N4-SiO2-Ce2O3 compositions were prepared by sintering with 2.5 MPa nitrogen pressure at temperatures of 1900 and 2090 C. Room-temperature flexural strengths near 700 MPa for sintered material compared favorably with the strength of hot-pressed material. At 1370 C, where flexural strengths as high as 363 MPa were obtained, it was observed that the coarsest structure was the strongest and the finest structure was the weakest. One of the compositions tested, Si3N4-8.7 wt pct SiO2-8.3 wt pct-Ce2O3, was found to have excellent 200-h oxidation resistance at 700, 1000, and 1370 C, without incidence of 700 to 1000 C phase instability and cracking.
The hot isostatic pressing of reaction bonded Si3N4 containing Y2O3 produced specimens with greater room temperature strengths than those by high pressure nitrogen sintering of the same material. Average room temperature bend strengths for hot isostatically pressed reaction bonded silicon nitride and high pressure nitrogen sintered reaction bonded silicon nitride were 767 and 670 MPa, respectively. Values of 472 and 495 MPa were observed at 1370 C. For specimens of similar but lower Y2O3 content produced from Si3N4 powder using the same high pressure nitrogen sintering conditions, the room temperature strength was 664 MPa and the 1370 C strength was 402 MPa. The greater strengths of the reaction bonded silicon nitride materials in comparison to the sintered silicon nitride powder material are attributed to the combined effect of processing method and higher Y2O3 content.
Nuclear Thermal Propulsion (NTP) has undergone development as an alternate in-space propulsion system to traditional chemical propulsion methods since the 1950s. In an NTP system, the energy released from fission in the core is utilized as the heat source to directly heat a propellant for propulsion, rather than chemical combustion in a traditional rocket. NTP has many desirable capabilities including flexible mission launch dates and reduced transit times due to it’s capability for high specific impulse. One of the main challenges with NTP systems is the structural integrity of the fuel. The fuel form required in the reactor core must withstand temperatures above 2700 Kelvin. Ceramic-metallic matrix fuel, ceramic-ceramic matrix fuel, and solid solution carbide fuels are the three strongest candidates for the extreme environments. Solid solution carbides have the potential to exhibit promising behavior as a fuel form in an NTP system. Of the multiple refractory metal carbides of interest, here we focus on zirconium carbide (ZrC), niobium carbide (NbC), and tantalum carbide (TaC). ZrC, NbC, and TaC powders were consolidated in monocarbide (ZrC, NbC, and TaC) and bi-carbide (ZrC-NbC, ZrC-TaC, NbC-TaC) forms using spark plasma sintering (SPS). In addition to the pure endpoint carbides, the examined compositions of the various bi-carbides ranged from 25-75 mol%. The sintering temperatures, pressures, and hold times were varied to determine the ideal sintering conditions. Grain size analysis, Archimedes’ density, scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersion spectroscopy (EDS) were used to determine and characterize the grain size, ideal density, porosity, phase stability, and chemical composition of each sample. The data from each sample was then used to generate a Master Sintering Curve (MSC) unique to each monocarbide or bi-carbide.
Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.