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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Fabrication of freeform potassium dihydrogen phosphate crystals by belt-on-wheel polishing for spatially tailored polarization control in high-power lasers

Large-aperture (>30 cm) optical components that provide spatially tailored control of the properties of a laser beam, such as phase, polarization, and amplitude, have been the focus of much research and development in recent years. Such optics can improve energy throughput and target implosion efficiency in high-power laser systems conducting inertial confinement fusion research. Here, a method is demonstrated for fabricating freeform surface topographies into the birefringent crystalline material, potassium dihydrogen phosphate (KDP). Belt-on-wheel polishing with an oil-based fluid, developed to mitigate the deliquescent properties of KDP, is used to deterministically polish a freeform topography into KDP, enabling the fabrication of a wave plate with spatially arbitrary retardance. Testing of the laser-induced damage threshold of belt-on-wheel polished KDP was conducted at a wavelength of 351 nm and a pulse duration of 1 ns. The results revealed that the polished surfaces are highly resistant to laser-induced damage, making them suitable for large-aperture, high-power laser applications.

Urban, Nathaniel D. [Univ. of Rochester, NY (Unite↗
DOE OSTI2026

Manipulation of Localized Excitons in CrPS4 by Temperature and Magnetic Field

Layered van der Waals magnetic semiconductors provide a versatile platform for exploring excitonic phenomena intertwined with spin and lattice degrees of freedom, enabling excitons to act as sensitive probes of magnetic order. CrPS4 is a layered antiferromagnetic semiconductor that hosts rich excitonic features whose microscopic origin and connection to magnetic ordering remain incompletely understood. Here, we investigate the electronic and excitonic properties of bulk CrPS4 using a combination of many-body perturbation theory, dynamical mean-field theory, and photoluminescence-based experiments. Our calculations establish CrPS4 as a direct-gap semiconductor with a bandgap of 2.48 eV in the antiferromagnetic phase. Several subbandgap excitonic transitions are predicted by theory, comprising multiple spin-allowed excitons and an additional spin-flip excitation, predominantly localized on the Cr3+ ions. Temperature- and magnetic-field-dependent optical measurements reveal thermally driven exciton redistribution among localized states and identify characteristic energy shifts that provide clear optical signatures of magnetic phase transitions in CrPS4. These results provide insights into the excitonic transitions of antiferromagnets and suggest potential routes for all-optical sensing and light-driven control of their magnetic order.

2D materials↗
DOE OSTI2026

Cave-based chronology of valley incision in the glaciated Northern Carpathians

While glaciers leave a mark on mountain landscapes, the importance of glacial erosion in mountains at a global scale remains insufficiently constrained despite over a century of research aimed at quantifying the rates and magnitudes of such erosion. Measuring rates of landscape change across the Quaternary in repeatedly glaciated mountain landscapes requires the ability to accurately partition the relative role of glacial versus fluvial processes in forming relief; however, the modification of landforms by surface erosion hinders quantification of process rates over the last few million years. This study presents 32 paired 26 Al and 10 Be cosmogenic nuclide burial ages from allochthonous, quartz-bearing sediment deposited within a paleophreatic karst system in the northern Carpathians. These data quantify Pliocene-to-present timing of valley incision and karst system reactivation, as well as erosion rates over time. Post-burial, muon production-correction yields 24 fully resolved ages, six minimum ages, and two unresolvable ages. Burial ages are interpreted to document the tempo of valley incision via phreatic passage formation and reveal that ∼80% of current valley relief (∼700 m) had developed by approximately 1.6 Ma. Paleoerosion rates derived from this dataset suggest little change in the processes generating sediment washed into the karst networks since the Pliocene. These results suggest that river incision dominated relief creation in Carpathian valleys that bear the imprint of glaciation. Our findings suggest the importance of investigating other mid-latitude mountainous regions worldwide to determine if they have similar erosion and topographic histories.

Carpathians↗
DOE OSTI2026

Compositional Homogeneity in Rapidly Solidified 316L stainless steel produced by laser powder-bed fusion processing

The segregation of alloying elements in rapidly solidified 316L stainless steel produced using additive manufacturing technologies is widely reported throughout literature. The microstructure of thin walls manufactured from 316L stainless steel using laser powder bed fusion are examined for the presence of alloy segregation, i.e. the rejection of solutes to grain boundaries. Metallographic methods including mechanical polishing and chemical etching are used to prepare samples for microanalysis m

Jankowski, Alan F. [Sandia National Laboratories (↗
DOE OSTI2026

Anomalous Spin‐Optical Helical Effect in Ti‐Based Kagome Metal

The kagome lattice stands as a rich platform for hosting a wide array of correlated quantum phenomena, ranging from charge density waves and superconductivity to electron nematicity and loop current states. Direct detection of loop currents in kagome systems has remained a formidable challenge due to their intricate spatial arrangements and the weak magnetic field signatures they produce, and this has made their identification experimentally subtle. This has left their existence and underlying mechanisms a topic of intense debate. In this work, we uncover signatures compatible with loop currents: spin handedness-selective signals that surpass conventional dichroic, spin, and spin-dichroic responses. We observe this phenomenon in the kagome metal CsTi 3 ⁢Bi 5 and we call it the anomalous spin-optical helical effect. This effect arises from the coupling of light's helicity with spin-orbital electron correlations, thereby providing an indirect yet sensitive approach to probe loop-current–related electronic correlations in quantum materials. Our discovery not only enriches the debate surrounding loop currents but also offers new experimental strategies to exploit the electronic phases of quantum materials via light–matter interaction.

anomalous spin-optical helical effect↗
DOE OSTI2026

Accelerating actinium-225 purification by high-pressure ion chromatography

Actinium-225 (t1/2 = 9.92 days) is an important radioisotope for targeted alpha therapy applications. The limited supply obtained through the decay of thorium-229 has motivated accelerator-based production routes, including irradiation of thorium targets. Irradiated targets can produce useful quantities of actinium-225, but the product requires final purification from chemically similar lanthanide contaminants. This work describes an automated high-pressure ion chromatography method for this final polishing step. The method uses a reusable strong-acid cation-exchange column bearing sulfonic acid functional groups. α-Hydroxyisobutyric acid (α-HIBA), adjusted to pH 4.3 with lithium hydroxide, complexes and elutes lanthanides, a dilute hydrochloric acid matrix-exchange step removes residual α-HIBA, and concentrated hydrochloric acid then elutes retained actinium(III). The protocol purified actinium-225 to >99% radiopurity across tracer-level samples and samples containing >150 µCi (5.6 MBq) of activity. A 10 min, 0.1 M hydrochloric acid matrix exchange substantially reduced organic eluent carryover, and in-line sodium iodide detection enabled real-time monitoring of actinium and lanthanide elution. The developed method can be completed in <1 h and provides a basis for automated purification workflows for accelerator-produced actinium-225.

Gaddis, Kevin [ORNL] (ORCID:0000000183398314)↗
DOE OSTI2026

Improved high-gradient performance for medium-velocity superconducting half-wave resonators: Surface preparation and trapped flux mitigation

A development effort to improve the performance of superconducting radio-frequency half-wave resonators (SRF HWRs) is underway at the Facility for Rare Isotope Beams (FRIB), where 220 such resonators are in operation. Our goal was to achieve an intrinsic quality factor (𝑄 0 ) of ≥ 2 × 10 10 at an accelerating gradient (𝐸 acc ) of 12 MV/m. FRIB production resonators were prepared with buffered chemical polishing. First trials of electropolishing (EP) and post-EP low-temperature baking of FRIB HWRs allowed us to reach higher gradient (15 MV/m, limited by quench) with a higher quality factor at high gradient, but 𝑄 0 was still below our goal. Trapped magnetic flux during the Dewar test was found to be a source of 𝑄 0 reduction. Three strategies were used to reduce the trapped flux: (i) adding a local magnetic shield (LMGS) to supplement the “global” magnetic shield around the Dewar for reduction of the ambient magnetic field; (ii) performing a “uniform cooldown” (UC) to reduce the thermoelectric currents; and (iii) using a compensation coil to further reduce the ambient field with active field cancellation (AFC). The LMGS improved the 𝑄 0 , but not enough to reach our goal. With UC and AFC, we exceeded our goal, reaching 𝑄 0 = 2.8 ×10 10 at 𝐸 acc = 12 MV/m.

Cryogenics & vacuum technology↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗