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At least 19 records

PZT Thin Film Piezoelectric Traveling Wave Motor

With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

Shen, Dexin↗

Microgravity isolation mounts based upon Piezoelectric film

The topics are presented in viewgraph form and include the following: a polyvinylidene fluoride (PVDF) actuator; a semi-active soft mount; a 3-axis experiment; low frequency disturbance attenuation; the control problem; and a 6-axis laboratory prototype.

Vonflotow, Andreas↗

Hybrid semiconductor-piezoacoustic radiofrequency device

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

36 MATERIALS SCIENCE↗

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article, several experiments on RIE in BCl3 and Cl2 (and sometimes Ar) had demonstrated the 10:1 selectivity ratio, and further experiments to enhance understanding and obtain further guidance for optimizing process conditions were planned.

Yang, Eui-Hyeok↗

Electromechanical response of piezoelectric thin films subjected to large strain

The use of piezoelectric thin sensors, when subjected to large static strain levels in ultrasonic applications is reported in this paper. A novel flipped beam bending method is proposed to induce static strain level nearing twice the incipient yield strain in the beam material (~0.39%). First, the effect of static large strain on ultrasonic guided wave propagation in the beam was studied using the velocity measurements obtained from a laser Doppler vibrometer. Next, the ultrasonic response of thin sensors is studied under compressive and tensile static strain (±0.72%) with the sensors symmetrically bonded on the lower and upper surfaces, and at the same axial location. The ultrasonic guided wave response to varying levels of static strain is recorded at different center frequencies (50–400 kHz) of the narrow banded ultrasonic excitation. As a case study, the variation of the ultrasonic guided wave response of polyvinylidene difluoride (PVDF) thin sensors with center frequencies at different static strain levels was analyzed and compared with that of lead zirconate titanate (PZT) thin sensors. PZT sensors show a higher variation of sensing performance with strain when compared to PVDF sensors. Apart from static strain, the possible effects on the change in performance of sensors, such as the change in the capacitance is discussed. The characterization method provides a reusable beam arrangement to study the ultrasonic sensor performance at large static strain levels. Characterization at large strain level allows the development of fail-safe sensors even under large strain and permanent plastic deformation of structure on which they are bonded, allowing accurate ultrasonic structural health monitoring even in the presence of damage progression. Piezopolymer sensor like PVDF are least susceptible to static strain due to large yield strain and low modulus and can serve as fail-safe sensors under large strain.

Rathod, Vivek↗

Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies

Recent advances in the growth of aluminum scandium nitride films on silicon suggest that this material platform could be applied for quantum electromechanical applications. Here, we model, fabricate, and characterize microwave frequency silicon phononic delay lines with transducers formed in an adjacent aluminum scandium nitride layer to evaluate aluminum scandium nitride films, at 32% scandium, on silicon interdigital transducers for piezoelectric transduction into suspended silicon membranes. We achieve an electromechanical coupling coefficient of 2.7% for the extensional symmetric-like Lamb mode supported in the suspended material stack and show how this coupling coefficient could be increased to at least 8.5%, which would further boost transduction efficiency and reduce the device footprint. The one-sided transduction efficiency, which quantifies the efficiency at which the source of microwave photons is converted to microwave phonons in the silicon membrane, is 10% at 5 GHz at room temperature and, as we discuss, there is a path to increase this toward near-unity efficiency based on a combination of modified device design and operation at cryogenic temperatures.

36 MATERIALS SCIENCE↗

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Neurgaonkar, R. R.↗

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Neurgaonkar, R. R.↗

Roll-to-Roll Advanced Materials Manufacturing DOE Laboratory Collaboration (FY2019 Final Report)

R2R processing is used to manufacture a wide range of products for various applications which span many industrial business sectors. The overall R2R methodology has been in use for decades and this continuous technique traditionally involves deposition of material(s) onto moving webs, carriers or other continuous belt-fed or conveyor-based processes that enable successive steps to build a final version which serves to support the deposited materials. Established methods that typify R2R include tape casting, silk-screen printing, reel-to-reel vacuum deposition/coating and R2R lithography. Products supported by R2R manufacturing include micro-electronics, electro-chromic window films, PVs, fuel cells for energy conversion, battery electrodes for energy storage, and barrier and membrane materials. Due to innovation in materials and process equipment, high-quality yet very low-cost multilayer technologies have the potential to be manufactured on a very cost-competitive basis. To move energy-related products from high-cost niche applications to the commercial sector, a means must be available to enable manufacture of these products in a cost-competitive manner that is affordable. Fortunately, products such as fuel cells, thin- and mid-film PVs, batteries, electrochromic and piezoelectric films, water separation membranes, and other energy saving technologies readily lend themselves to manufacture using R2R approaches. However, more early-stage research is needed to solve the challenge of linking the materials (particles, polymers, solvents, additives) used in ink and slurry formulations, though the ink processing, coating and drying processes, to the ultimate performance of the final R2R product, especially for a process that uses multiple layers of deposition to achieve the end product.

42 ENGINEERING↗

Roll-to-Roll Advanced Materials Manufacturing DOE Laboratory Collaboration (FY2020 Final Report)

R2R processing is used to manufacture a wide range of products for various applications which span many industrial business sectors. The overall R2R methodology has been in use for decades and this continuous technique traditionally involves deposition of material(s) onto moving webs, carriers or other continuous belt-fed or conveyor-based processes that enable successive steps to build a final version which serves to support the deposited materials. Established methods that typify R2R processing include tape casting, silk-screen printing, reel-to-reel vacuum deposition/coating, and R2R lithography. Products supported by R2R manufacturing include micro-electronics, electro-chromic window films, PVs, fuel cells for energy conversion, battery electrodes for energy storage, and barrier and membrane materials. Due to innovation in materials and process equipment, high-quality yet very low-cost multilayer technologies have the potential to be manufactured on a very cost-competitive basis. To move energy-related products from high-cost niche applications to the commercial sector, the means must be available to enable manufacture of these products in a cost-competitive manner that is affordable. Fortunately, products such as fuel cells, thin- and mid-film PVs, batteries, electrochromic and piezoelectric films, water separation membranes, and other energy saving technologies readily lend themselves to manufacture using R2R approaches. However, more early-stage research is needed to solve the challenge of linking the materials (particles, polymers, solvents, additives) used in ink and slurry formulations and the coating and drying processes to the ultimate performance of the final R2R product, especially for a process that uses multiple layers of deposition to achieve the end product. To solve the problems associated with these challenges, the R2R Collaboration is executing a research program with outcomes that will ultimately link modeling, processing, metrology and defect detection tools, thereby directly relating the properties of constituent particles and processing conditions to the performance of final devices. This collaborative approach was designed to foster identification and development of materials and processes related to R2R for clean-energy materials development. Using computational and experimental capabilities by acknowledged subject matter experts within the supported National Laboratory system, this project leverages the capabilities and expertise at each of five National Laboratories to further the development of multilayer technologies that will enable high-volume, cost-competitive platforms. A typical R2R process has three steps: (1) mixing of particles and various constituents in a slurry, (2) coating of the ink/slurry mixture on a substrate, and (3) drying/curing and processing of the coating. Final performance of devices made via R2R processes is dependent on the active materials (e.g., electrochemical particles in battery or fuel cell electrodes) and the device structure that stems from the governing component interactions within the various steps. However, a fundamental understanding of the underlying mechanisms and phenomena is still lacking, which is why industrial-scale R2R process development and manufacturing is still largely empirical in nature. The FY 2019 through FY 2021 program addresses aspects of the following two targets from the AMO Multi-Year Program Plan: (1) Target 8.1 Develop technologies to reduce the cost per manufactured throughput of continuous R2R manufacturing processes. (A) Increasing throughput of R2R processes by 5 times for batteries (to 50 square feet per minute (50 ft 2 /min)) and capacitors and 10 times for printed electronics and the manufacture of other substrates and MEs used in support of these products. (B) Developing resolution capabilities to enable registration and alignment that will detect, align, and co-deposit multiple layers of coatings and print < 1-micron (1 µm) features using continuous process scalable for commercial production. (C) Developing scalable and reliable R2R processes for solution deposition of ultra-thin (<10 nm) films for active and passive materials. (D) Develop in-line multilayer coating technology on thin films with yields greater than 95%. (2) Target 8.2 Develop in-line instrumentation tools that will evaluate the quality of single and multilayer materials in-process. (A) Developing in-line QC technologies and methodologies for real-time identification of defects and expected product properties “in-use/application” during continuous processing at all size-scales with a focus on the “micro” and “nano” scale traces, lines, and devices, i.e., <1 μm at 300 ft./min for R2R processing in air and <10 nm at 20 ft./min for vacuum (B) Developing technologies to increase the measurement frequency of surface rheology without significant cost increases with a goal of a 10-nanometer in-line profilometry at a production rate of 100,000 square millimeters per minute (100,000 mm 2 /min).

42 ENGINEERING↗

Roll-to-Roll Advanced Materials Manufacturing DOE Laboratory Collaboration - Early Stage R&D: Phase 2 and FY21 (Final Report)

R2R processing is used to manufacture a wide range of products for various applications which span many industrial business sectors. The overall R2R methodology has been in use for decades and this continuous technique traditionally involves deposition of material(s) onto substrates or membranes that are on moving webs, carriers or other continuous belt-fed or conveyor-based processes that enable successive steps to build a final product. Established methods that typify R2R processing include tape casting, silk-screen printing, reel-to-reel vacuum deposition/coating, and R2R lithography. Products supported by R2R manufacturing include micro-electronics, electro-chromic window films, PVs, fuel cells for energy conversion, battery electrodes and electrolytes for energy storage, and barrier and membrane materials for decarbonization and air and water filtration. Due to innovation in materials and process equipment, high-quality yet very low-cost multilayer technologies have the potential to be manufactured on a very cost-competitive basis. To move energy-related products from high-cost niche applications to the commercial sector, the means must be available to enable manufacture of these products in a cost-competitive manner. Fortunately, products such as fuel cells, thin- and mid-film PVs, batteries, electrochromic and piezoelectric films, water separation membranes, and other energy saving technologies readily lend themselves to manufacture using R2R approaches. However, more early-stage research is needed to solve the challenge of linking the materials (particles, polymers, solvents, additives) used in ink and slurry formulations and the coating and heated drying processes to the ultimate performance of the final R2R product, especially for a process that uses multiple layers of deposition to achieve the end product.

36 MATERIALS SCIENCE↗

Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

Hickernell, Fred S.↗

Orientation-controlled crystallization of γ-glycine films with enhanced piezoelectricity

Glycine, the simplest amino acid, is considered a promising functional biomaterial owing to its excellent biocompatibility and strong out-of-plane piezoelectricity. Practical applications require glycine films to be manufactured with their strong piezoelectric polar $\langle$001$\rangle$ direction aligned with the film thickness. Based on the recently-developed solidification approach of a polyvinyl alcohol (PVA) and glycine aqueous solution, in this work, we demonstrate that the crystal orientation of the as-synthesized film is determined by the orientation of glycine crystal nuclei. By controlling the local nucleation kinetics via surface curvature tuning, here we shifted the nucleation site from the edge to the middle of the liquid film, and thereby aligned the $\langle$001$\rangle$ direction vertically. As a result, the PVA–glycine–PVA sandwich film exhibits the highest average piezoelectric coefficient d 33 of 6.13 ± 1.13 pC N –1 . This work demonstrates a promising kinetic approach to achieve crystallization and property control in a scalable biocrystal manufacturing process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗