Phonons, electrons, and protons in ferroelectric materials.
Phonons, electrons and protons in ferro- paraelectrics and hydrogen bonded ferroelectrics, examining higher frequency optical and lower frequency dielectric properties
Silverman, B. D.↗
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Mid-infrared Spectroscopy of Pr-Doped Materials
Solid state lanthanide doped lasers primarily operate in the ultraviolet, visible, near infrared and short-wavelength infrared out to around 2.1 μm. At longer wavelengths, the transitions in conventional oxide crystal and glass materials become susceptible to multiphonon quenching due to their relatively large phonon energy. The use of low phonon materials can minimize the nonradiative quenching, opening up possibilities for solid state lanthanide lasers operating in the mid-infrared (MIR). This provides motivation to study the spectroscopy of lanthanide ions in bromide, chloride and fluoride materials, which have relatively low phonon energies. In this article, the MIR spectroscopy or praseodymium ions in five different host materials is studied, specifically KPb2Br5 (KPB), LaF3, KYF4 (KYF), BaY2F8 (BYF) and YLiF4 (YLF) host crystals. The MIR emission cross sections have been measured from 3 to 6 μm and reciprocity of absorption and emission is utilized to validate the results. The lifetime dynamics in the MIR are covered for various pump and emission wavelengths. Results are also presented on MIR emission from 6.5 to 8.5 μm in a Pr: KPB crystal, which, to the best of the authors knowledge, is the first such measurement of luminescence in this wavelength range that has been published.
Brian M Walsh↗
Reduced thermal conductivity due to scattering centers in p-type SiGe alloys
Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.
Beaty, John S.↗
A multilayered approach to superconducting tunnel junction x ray detectors
'First generation' superconducting tunnel junction X-ray detectors (characterized by a single tunnel junction in direct contact with its substrate, with totally external amplification) remain more than an order of magnitude away from their theoretical energy resolutions which are in the order of eV's. The difficulties that first generation devices are encountering are being attacked by a 'second generation' of superconducting X-ray detector designs including quasiparticle trapping configurations and Josephson junction arrays. A second generation design concept, the multilayered superconducting tunnel junction X-ray detector, consisting of tens to hundreds of tunnel junctions stacked on top of one another (a superlattice), is presented. Some of the possibilities of this engineered materials approach include the tuning of phonon transmission characteristics of the material, suppression of parasitic quasiparticle trapping and intrinsic amplification.
Rippert, E. D.↗
Record Low NEP in the Hot-Electron Titanium Nanobolometers
We are developing hot-electron superconducting transition-edge sensors (TES) capable of counting THz photons and operating at T = 0.3K. We fabricated superconducting Ti nanosensors with Nb contacts with a volume of approx. 3x10(exp -3) cu microns on planar Si substrate and have measured the thermal conductance due to the weak electron-phonon coupling in the material G = 4x10(exp -14) W/K at 0.3 K. The corresponding phonon-noise NEP = 3x10(exp -19) W/Hz(sup 1/2). Detection of single optical photons (1550nm and 670nm wavelength) has been demonstrated for larger devices and yielded the thermal time constants of 30 microsec at 145 mK and of 25 microsec at 190 mK. This Hot-Electron Direct Detector (HEDD) is expected to have a sufficient energy resolution for detecting individual photons with (nu) > 1 THz where NEP approx. 3x10(exp -20) W/Hz(sup 1/2) is needed for spectroscopy in space.
transition edge sensors↗
Experimental approaches for improving SiGe thermoelectric efficiency at JPL
Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.
Borshchevsky, Alex↗
Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3
A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.
Caillat, T.↗
Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.
Park, Yeonjoon↗
Phonon-drag thermopower in cu-al and cu-si alloys.
Phonon-drag thermopower change in Cu-Al and Cu-Si alloys at cryogenic temperature
ALUMINUM ALLOY↗
Correlation of normal and superconducting properties and unified approach to the description of high Tc oxides
We present a unified approach based on the Fermi liquid picture which allows us to describe the normal as well as the superconducting properties of the doped cuprates. The theory that is presented is for the doped compounds which are metallic. One can distinguish two interrelated, but nevertheless, different directions in the physics of high T(sub c): one involving the problem of carrier doping and the transition to the metallic state, and the second being the description of the metallic state. It is important that this metallic phase undergoes the transition into the superconducting state; as a result, our analysis is directly related to the origin of high T(sub c). We are using a quasi-2D Fermi liquid model to estimate the fundamental parameters of these very interesting materials. We find that this description is able to describe these materials and also that phonons and plasmons play a major role in the mechanism of high T(sub c).
Kresin, V. Z.↗
An Ultrasensitive Hot-Electron Bolometer for Low-Background SMM Applications
We are developing a hot-electron superconducting transition-edge sensor (TES) that is capable of counting THz photons and operates at T = 0.3K. The main driver for this work is moderate resolution spectroscopy (R approx. 1000) on the future space telescopes with cryogenically cooled (approx. 4 K) mirrors. The detectors for these telescopes must be background-limited with a noise equivalent power (NEP) approx. 10(exp -19)-10(exp -20) W/Hz(sup 1/2) over the range v = 0.3-10 THz. Above about 1 THz, the background photon arrival rate is expected to be approx. 10-100/s), and photon counting detectors may be preferable to an integrating type. We fabricated superconducting Ti nanosensors with a volume of approx. 3x10(exp -3) cubic microns on planar substrate and have measured the thermal conductance G to the thermal bath. A very low G = 4x10(exp -14) W/K, measured at 0.3 K, is due to the weak electron-phonon coupling in the material and the thermal isolation provided by superconducting Nb contacts. This low G corresponds to NEP(0.3K) = 3x10(exp -19) W/Hz(sup 1/2). This Hot-Electron Direct Detector (HEDD) is expected to have a sufficient energy resolution for detecting individual photons with v > 0.3 THz at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range is approx. 50 dB.
bolometers↗
Effect of small scattering centers on the thermoelectric properties of p-type SiGe alloys
Theory predicts that the addition of ultra-fine, inert, phonon-scattering centers to thermoelectric materials will reduce their thermal conductivity. To investigate this prediction, ultrafine particulates (20 to 120 A) of silicon nitride have been added to boron-doped, p-type, 80/20 SiGe. All of the SiGe samples produced from ultrafine powder have lower thermal conductivities than standard SiGe, but high-temperature heat treatment increases the thermal conductivity back to the value for standard SiGe. However, the SiGe samples with silicon nitride, inert, phonon-scattering centers retained the lower thermal conductivity after several heat treatments. A reduction of approximately 25 percent in thermal conductivity has been achieved in these samples. The magnitude of the reduction agrees with theoretical predictions.
Beaty, John S.↗
Thermoelectric power in niobium-zirconium alloys.
Thermoelectric power in niobium-zirconium alloys noting phonon drag peak attenuation due to Zr solute addition at very low temperatures
NIOBIUM ALLOY↗
High temperature thermoelectric energy conversion
The theory and current status of materials research for high-temperature thermoelectric energy conversion are reviewed. Semiconductors are shown to be the preferred class of materials for this application. Optimization of the figure of merit of both broadband and narrow-band semiconductors is discussed as a function of temperature. Phonon scattering mechanisms are discussed, and basic material guidelines are given for reduction of thermal conductivity. Two general classes of materials show promise for high temperature figure of merit (Z) values, namely the rare earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.
Wood, Charles↗
Raman spectroscopic investigations of Hg-Cd-Te melts
Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.
Morrobel-Sosa, Anny↗
Spectroscopy of infrared-active phonons in high-temperature superconductors
For a large variety of superconducting materials both experimental and theoretical lattice dynamical studies have been performed to date. The assignment of the observed infrared- and Raman-active phonon modes to the particular lattice eigenmodes is generally accepted. We will concentrate here upon the analysis of the changes of the infrared-phonon parameters (frequency and linewidth) upon entering the superconducting state which, as will be shown, may provide information on the magnitude of the superconductivity-related gap and its dependence on the superconducting transition temperature Tc.
Litvinchuk, A. P.↗
The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap
An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.
Rippert, Edward D.↗
High temperature thermal conductivity measurements on lanthanum sulfides using the flash method
In the past, high temperature specific heat and hence thermal conductivity measurements, using the flash method have not been very accurate. This is due to the difficulty of exactly determining the amount of heat deposited on the front face of a sample during each flash. This problem has now been solved by sputtering a thin layer of graphite on the standard reference and test samples. Data taken shows that the amount of heat deposited can now be determined to within about 2 percent resulting in more accurate thermal conductivity data. The results of measurements on several lanthanum sulfides with stoichiometries between LaS(1.35) and LaS(1.48) are reported and show a minimum in the lattice thermal conductivity at a composition of around LaS(1.41). This is believed to be due to the scattering of low-frequency phonons by large defects, i.e., second phase material (beta-phase) and pores.
Vandersande, J. W.↗